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M24C02-RMB6TG

STMicroelectronics

M24C02-RMB6TG by STMicroelectronics

STMicroelectronics M24C02-RMB6TG is an EEPROM with 256x8 organization, I2C serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 0.4 MHz and has a write protection feature for hardware security. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 8,000 parts In-Stock

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8,000

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Digiode

USA . 4,499 parts In-Stock

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4,499

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Velocity Electronics

USA . 1,036 parts In-Stock

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1,036

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Anansix

USA . 467 parts In-Stock

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467

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Prism Electronics

USA . 54 parts In-Stock

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54

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Nova Conductors

Japan . 21 parts In-Stock

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21

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IDEA Electronic Components Group

UK . 1,451 parts In-Stock

1+ parts

$2.957

100+ parts

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$2.661

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1,451

$2.957

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$2.661

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MKK Technologies

India . 564 parts In-Stock

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$5.560

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$5.560

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DigiPath Technology Company

USA . 564 parts In-Stock

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$5.560

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564

$5.560

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AZTECH Wire

Italy . 283 parts In-Stock

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$7.277

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283

$7.277

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Microchip USA

USA . 233 parts In-Stock

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$17.312

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233

$17.312

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Ampacity Inc.

Singapore . 658 parts In-Stock

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$28.000

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658

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Kepictronics

USA . 24,141 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,655 parts In-Stock

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Argo Parts USA

USA . 4,586 parts In-Stock

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4,586

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Alle Elektronik GmbH

Germany . 3,770 parts In-Stock

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Corphita

USA . 3,534 parts In-Stock

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Continental Prestige Electronics

USA . 3,185 parts In-Stock

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Lixinc

USA . 1,939 parts In-Stock

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Parana Technologies

USA . 1,716 parts In-Stock

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$3.535

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1,716

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$3.535

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Perfect Parts

USA . 217 parts In-Stock

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Overview

Unleash the power of reliable data storage with the M24C02-RMB6TG by STMicroelectronics. This high-quality EEPROM offers unparalleled durability and performance, making it ideal for industrial applications where precision is key. With a vast memory density and endurance of 1,000,000 write/erase cycles, this EEPROM ensures your data is secure and accessible whenever you need it. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations and provides exceptional value for customers seeking top-notch memory solutions. Elevate your projects with the M24C02-RMB6TG and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this EEPROM lightweight and durable.

Surface Mount: YES

With surface mount capability, this EEPROM can be easily integrated onto PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and utilization of space on a PCB.

Operating Mode: SYNCHRONOUS

The synchronous operation of this EEPROM ensures reliable and consistent performance in data storage and retrieval.

Nominal Supply Voltage / Vsup (V): 2.5

The 2.5V nominal supply voltage makes this EEPROM energy-efficient and suitable for low-power applications.

Power Supplies (V): 2/5

This EEPROM can operate within a wide range of power supplies, providing flexibility in design and compatibility with various systems.

No. of Terminals: 8

The 8 terminals on this EEPROM allow for easy integration and connection to other components in a circuit.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style make this EEPROM ideal for compact and space-constrained applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EEPROM can withstand harsh environmental conditions without compromising performance.

Organization: 256X8

The organization of 256X8 ensures efficient storage and retrieval of data in this EEPROM.

Minimum Operating Temperature: -40 °C

The EEPROM's ability to operate at temperatures as low as -40°C makes it suitable for use in various environments and applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The terminal finish of nickel/palladium/gold enhances the reliability and connectivity of this EEPROM.

I2C Control Byte: 1010DDDR

The I2C control byte structure of 1010DDDR allows for easy and efficient communication with other devices in a system.

Terminal Position: DUAL

The dual terminal position of this EEPROM provides flexibility in installation and connectivity options.

Write Protection: HARDWARE

The hardware-based write protection feature ensures data security and integrity in this EEPROM.

Maximum Seated Height: 0.6 mm

With a maximum seated height of 0.6mm, this EEPROM can be easily accommodated in compact designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

The maximum clock frequency of 0.4 MHz enables fast and efficient data transfer rates in this EEPROM.

Width: 2 mm

The compact width of 2mm allows for efficient use of space on a PCB when integrating this EEPROM.

Minimum Supply Voltage (Vsup): 1.8 V

The minimum supply voltage requirement of 1.8V ensures compatibility with a wide range of power sources.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time of 30 seconds at peak reflow temperature ensures proper soldering and reliability of this EEPROM during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient and reliable soldering of this EEPROM on a PCB.

Length: 3 mm

With a length of 3mm, this EEPROM can fit seamlessly into small and compact electronic devices.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this EEPROM can withstand harsh conditions and perform reliably in demanding environments.

Technology: CMOS

The CMOS technology used in this EEPROM ensures low power consumption and high-speed operation.

Parallel or Serial: SERIAL

The serial data transfer mode of this EEPROM allows for simple and efficient communication with other devices in a system.

Terminal Form: NO LEAD

The no lead terminal form of this EEPROM simplifies the assembly process and enhances reliability.

Maximum Supply Current: 0.8 mA

With a maximum supply current of 0.8 mA, this EEPROM operates efficiently without draining excess power.

No. of Words: 256 words

This EEPROM can store 256 words of data, making it suitable for a wide range of applications.

Memory Width: 8

The memory width of 8 bits in this EEPROM allows for efficient data storage and retrieval.

Minimum Data Retention Time: 40

With a minimum data retention time of 40 years, this EEPROM ensures long-term storage of critical information.

Terminal Pitch: 0.5 mm

The terminal pitch of 0.5mm provides a compact and space-saving layout for this EEPROM on a PCB.

No. of Words Code: 256

The 256 words code structure offers efficient organization and management of data in this EEPROM.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, this EEPROM can handle a wide range of power input levels.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1,000,000 write/erase cycles ensures lasting reliability and performance in this EEPROM.

Serial Bus Type: I2C

The I2C serial bus type allows for easy integration and communication with other devices in a system.

Maximum Write Cycle Time (tWC): 5 ms

The maximum write cycle time of 5ms ensures fast and efficient data storage and retrieval in this EEPROM.

Memory Density: 2048 bit

With a memory density of 2048 bits, this EEPROM offers ample storage capacity for various data types.

Memory IC Type: EEPROM

As an EEPROM memory IC, this product provides non-volatile and reprogrammable storage for critical data.

Maximum Standby Current: 0.000001 Amp

With a maximum standby current of 0.000001 Amp, this EEPROM operates efficiently in low-power modes.

Technical Specifications

EEPROM M24C02-RMB6TG attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

.8 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24C02-RMB6TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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