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M24C08-RDS6TG

STMicroelectronics

M24C08-RDS6TG by STMicroelectronics

M24C08-RDS6TG by STMicroelectronics is a 1Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates b/w -40 °C to 85 °C and supports a supply voltage of 1.8V to 5.5V, ensuring reliability in various environments. With a write endurance of 1M cycles, it's perfect for data storage needs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,877 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 3,961 parts In-Stock

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Digiode

USA . 853 parts In-Stock

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Anansix

USA . 227 parts In-Stock

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IDEA Electronic Components Group

UK . 765 parts In-Stock

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$4.781

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$4.303

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MKK Technologies

India . 2,087 parts In-Stock

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$8.991

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DigiPath Technology Company

USA . 2,087 parts In-Stock

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$8.991

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AZTECH Wire

Italy . 910 parts In-Stock

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$14.210

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Component Stockers USA

USA . 509 parts In-Stock

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$99.990

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GreenTree Electronics

Israel . 19,810 parts In-Stock

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Corphita

USA . 4,778 parts In-Stock

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Microchip USA

USA . 4,046 parts In-Stock

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Parana Technologies

USA . 10 parts In-Stock

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$5.717

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Overview

Unlock exceptional performance with the M24C08-RDS6TG EEPROM from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This compact, reliable memory device offers outstanding data retention and endurance, ideal for industrial applications. With seamless integration via I2C and robust write protection, it enhances system reliability while minimizing energy consumption. Choose STMicroelectronics for quality you can depend on and empower your designs with unmatched efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, ensuring reliability in various applications.

Surface Mount: YES

Compatible with modern manufacturing techniques, allowing for compact designs.

Package Shape: SQUARE

Efficient use of board space, making it suitable for space-constrained applications.

Operating Mode: SYNCHRONOUS

Provides faster data transfer rates, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement, simplifying integration into existing systems.

Power Supplies (V): 2/5

Flexible voltage options allow for adaptation to varying circuit designs.

No. of Terminals: 8

Compact design with sufficient terminals for essential connections.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Ideal for modern electronic devices requiring low-profile components.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications with exposure to higher temperatures.

Organization: 1KX8

Provides a balance of storage capacity and accessibility for various applications.

Minimum Operating Temperature: -40 °C

Can function in harsh environments, making it versatile for diverse applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures good conductivity and corrosion resistance, enhancing reliability.

I2C Control Byte: 1010DMMR

Facilitates easy control and integration in I2C-based systems.

Terminal Position: DUAL

Offers flexibility in design layout, simplifying PCB design.

Write Protection: HARDWARE

Enhances data integrity and security against unintended write operations.

Maximum Seated Height: 1.1 mm

Low profile design suitable for slim electronic devices.

Maximum Clock Frequency (fCLK): 0.4 MHz

Provides adequate speed for many applications without excessive power consumption.

Width: 3 mm

Compact size allows for integration in small form factor devices.

Minimum Supply Voltage (Vsup): 1.8 V

Capable of operating at lower power levels, increasing energy efficiency.

Length: 3 mm

Small dimensions facilitate space-saving designs.

Temperature Grade: INDUSTRIAL

Designed for reliable operation in harsh industrial environments.

Technology: CMOS

Offers low power consumption and high speed operation.

Parallel or Serial: SERIAL

Efficient data transmission over fewer connections, saving space.

Terminal Form: GULL WING

Ideal for surface-mount technology (SMT), proving ease of handling.

Maximum Supply Current: 0.8 mA

Low power consumption, which is important for battery-powered devices.

No. of Words: 1024 words

Provides ample storage for various data applications.

Memory Width: 8

Supports efficient data processing with an effective memory architecture.

Minimum Data Retention Time: 40 years

Ensures long-term data stability, making it reliable for critical applications.

Terminal Pitch: 0.65 mm

Suitable for modern circuit board designs, allowing for denser layouts.

No. of Words Code: 1K

Sufficient memory capacity for many embedded applications.

Maximum Supply Voltage (Vsup): 5.5 V

Offers flexibility in power supply design, accommodating different systems.

Endurance: 1,000,000 Write/Erase Cycles

High endurance makes it suitable for applications involving frequent data updates.

Serial Bus Type: I2C

Widely used communication protocol ensures compatibility with many systems.

Maximum Write Cycle Time (tWC): 5 ms

Quick write cycles enhance system performance and responsiveness.

Memory Density: 8192 bit

Offers a balance of storage capacity suitable for various applications.

Memory IC Type: EEPROM

Known for non-volatile memory, retaining data without power.

Maximum Standby Current: 0.000001 Amp

Extremely low standby current ensures energy efficiency for battery-operated devices.

Technical Specifications

EEPROM M24C08-RDS6TG attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DMMR

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

.8 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24C08-RDS6TG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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