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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
24LC01BT-E/MS by Microchip Technology

24LC01BT-E/MS

Microchip Technology

24LC01BT-E/MS by Microchip Technology is a 1024-bit EEPROM with 1000000 write/erase cycles. Operating at 5V, it offers 128x8 organization and I2C serial bus type for automotive applications. With a max clock frequency of 0.4 MHz, it features hardware write protection and operates in the temperature range of -40 to 125°C.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

S-PDSO-G8

e3

3 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X8

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24FC515-I/SM by Microchip Technology

24FC515-I/SM

Microchip Technology

24FC515-I/SM by Microchip Tech is a 64KX8 EEPROM with 1MHz clock freq, 1000000 write/erase cycles, and I2C serial bus. Ideal for industrial applications requiring reliable non-volatile memory storage in small outline packages. Operates b/w -40 to 85 °C with low standby current of 0.000005 Amp.

1 MHz

200

1000000 Write/Erase Cycles

1010MDDR

R-PDSO-G8

e3

5.245 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

TS 16949

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

XCCACE128-I by Xilinx

XCCACE128-I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 50; Package Shape: RECTANGULAR; Technology: CMOS; Operating Mode: SYNCHRONOUS;

33 MHz

R-XXMA-X50

42.8 mm

134217728 bit

CONFIGURATION MEMORY

16

1

50

8388608 words

8M

SYNCHRONOUS

60 Cel

0 Cel

8MX16

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

Not Qualified

3.3 mm

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

36 mm

AT17LV010-10PI by Atmel

AT17LV010-10PI

Atmel

AT17LV010-10PI by Atmel is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 3.3V, has a clock frequency of 10 MHz, and offers 100000 Write/Erase cycles. Ideal for industrial applications requiring configuration memory with hardware write protection and synchronous operation.

IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO

10 MHz

90

100000 Write/Erase Cycles

R-PDIP-T8

e0

9.271 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3/5

Not Qualified

5.334 mm

.0001 Amp

EEPROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

HARDWARE

XC17S15ASO20I by Xilinx

XC17S15ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Standby Current: .00005 Amp;

COMMON

R-PDSO-G20

e0

12.8 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

20

197696 words

197696

SYNCHRONOUS

85 Cel

-40 Cel

197696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

24LC32A-E/SM by Microchip Technology

24LC32A-E/SM

Microchip Technology

24LC32A-E/SM by Microchip Technology is a 4Kx8 EEPROM with I2C control byte 1010DDDR. It operates at 5V, has 1000000 write/erase cycles, and supports hardware write protection. Ideal for automotive applications due to its small outline package and wide temperature range of -40 to 125°C.

2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

32768 bit

EEPROM

8

1

1

8

4096 words

4K

SYNCHRONOUS

125 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC32A-E/ST by Microchip Technology

24LC32A-E/ST

Microchip Technology

24LC32A-E/ST by Microchip Tech is an EEPROM with 4KX8 organization, operating at 5V. It has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for automotive applications due to its -40 to 125 °C temp range and I2C serial bus type.

2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

32768 bit

EEPROM

8

1

1

8

4096 words

4K

SYNCHRONOUS

125 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA128-I/MS by Microchip Technology

24AA128-I/MS

Microchip Technology

24AA128-I/MS by Microchip Tech is an EEPROM with 16KX8 organization, 131072 bit memory density, and 1000000 Write/Erase cycles. Operating in industrial temperature range, it uses I2C serial bus for applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000005 Amp, it's ideal for space-constrained designs.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24AA52-I/ST by Microchip Technology

24AA52-I/ST

Microchip Technology

24AA52-I/ST by Microchip Technology is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.1 MHz, and is ideal for industrial applications requiring reliable non-volatile memory storage.

.1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE/SOFTWARE

24AA01T-I/ST by Microchip Technology

24AA01T-I/ST

Microchip Technology

24AA01T-I/ST by Microchip Technology is an EEPROM with 128x8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-G8

e3

4.4 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

M93S46-MN6T by STMicroelectronics

M93S46-MN6T

STMicroelectronics

M93S46-MN6T by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode and a max clock frequency of 2 MHz. It features hardware/software write protection and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications, it supports up to 1M write/erase cycles.

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

1024 bit

EEPROM

16

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.000015 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M93S56-MN6 by STMicroelectronics

M93S56-MN6

STMicroelectronics

M93S56-MN6 by STMicroelectronics is a 2048-bit EEPROM with a synchronous operating mode and a max clock frequency of 2 MHz. It features hardware/software write protection and operates within -40 °C to 85 °C, making it ideal for industrial applications. With an endurance of 1M write/erase cycles, it's perfect for reliable data storage.

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

MICROWIRE

.000015 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

BR24L02-W by ROHM

BR24L02-W

ROHM

ROHM's BR24L02-W is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates at a voltage range of 1.8V to 5.5V and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e2

9.3 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

3.7 mm

I2C

.000002 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

Tin/Copper (Sn/Cu)

THROUGH-HOLE

2.54 mm

DUAL

10

7.62 mm

5 ms

HARDWARE

24AA512-I/ST14 by Microchip Technology

24AA512-I/ST14

Microchip Technology

24AA512-I/ST14 by Microchip is a 64KX8 EEPROM with I2C control byte. It operates at 2.5V, has 14 terminals in a small outline package, and offers write protection. Ideal for industrial applications requiring reliable non-volatile memory storage with up to 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G14

e3

5 mm

524288 bit

EEPROM

8

1

1

14

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP14,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

4.4 mm

5 ms

HARDWARE

24FC512-I/ST14 by Microchip Technology

24FC512-I/ST14

Microchip Technology

24FC512-I/ST14 by Microchip Technology is a 64KX8 EEPROM with I2C control byte 1010DDDR. Operating at 1 MHz, it has a memory density of 524288 bit and can endure 1000000 write/erase cycles. Ideal for industrial applications, it offers hardware write protection and operates in the -40 to 85 °C temperature range.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G14

e3

5 mm

524288 bit

EEPROM

8

1

1

1

14

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP14,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

4.4 mm

5 ms

HARDWARE

24LC512-E/MF by Microchip Technology

24LC512-E/MF

Microchip Technology

24LC512-E/MF by Microchip Tech is a 64KX8 EEPROM with 1000000 Write/Erase Cycles. Operating at -40 to 125 °C, it has a 0.4 MHz clock frequency and I2C serial bus type for automotive applications. With 524288 bit memory density, it offers hardware write protection and operates on 3/5 V supplies.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

3/5

Not Qualified

1 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC512T-I/MF by Microchip Technology

24LC512T-I/MF

Microchip Technology

24LC512T-I/MF by Microchip Technology is a small outline, very thin profile EEPROM with 64Kx8 organization. It operates in synchronous mode at 0.4 MHz clock frequency and has a max supply voltage of 5.5V. Ideal for industrial applications requiring high endurance with 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

3/5

Not Qualified

1 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC512T-I/ST14 by Microchip Technology

24LC512T-I/ST14

Microchip Technology

24LC512T-I/ST14 by Microchip Tech is a 64KX8 EEPROM with I2C control byte. Operating at 4.5V, it offers 1000000 write/erase cycles and -40 to 85°C temp range. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G14

e3

5 mm

524288 bit

EEPROM

8

1

1

14

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP14,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

4.4 mm

5 ms

HARDWARE

24LC01B-I/SNG by Microchip Technology

24LC01B-I/SNG

Microchip Technology

24LC01B-I/SNG by Microchip Technology is a small outline EEPROM with 128x8 organization, I2C control byte, and hardware write protection. It operates at 5V with a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

NO

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

93AA46C-I/MS by Microchip Technology

93AA46C-I/MS

Microchip Technology

93AA46C-I/MS by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 2.5V and up to 3MHz clock frequency. It features software write protection, MICROWIRE serial bus type, and industrial temperature grade suitability for various applications requiring reliable non-volatile memory storage.

8

3 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

YES

NO

TS 16949

1.1 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

6 ms

SOFTWARE

93AA46C-I/P by Microchip Technology

93AA46C-I/P

Microchip Technology

93AA46C-I/P by Microchip Technology is an EEPROM with 64x16 organization, operating at 2.5V, and featuring a max clock frequency of 3 MHz. It is used in industrial applications for software write protection and offers a memory density of 1024 bit.

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

1024 bit

EEPROM

16

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

YES

NO

TS 16949

5.334 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

6 ms

SOFTWARE

93AA46CX-I/SN by Microchip Technology

93AA46CX-I/SN

Microchip Technology

Microchip Technology's 93AA46CX-I/SN is a serial EEPROM with 64x16 organization, operating at 2.5V and up to 3MHz clock frequency. Ideal for industrial applications, it offers 1000000 write/erase cycles, MICROWIRE interface, and software write protection for secure data storage.

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

6 ms

SOFTWARE

93AA46CXT-I/SN by Microchip Technology

93AA46CXT-I/SN

Microchip Technology

93AA46CXT-I/SN by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 2.5V and featuring a max clock frequency of 3MHz. Ideal for industrial applications, it offers software write protection, MICROWIRE serial bus type, and TOTEM POLE output characteristics.

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

6 ms

SOFTWARE

93C46C-E/SN by Microchip Technology

93C46C-E/SN

Microchip Technology

93C46C-E/SN by Microchip is a 1024-bit EEPROM with 64x16 organization, operating at 5V. It features a serial interface, totem pole output, and software write protection. Ideal for automotive applications due to its TS16949 screening level and wide temperature range (-40 to 125°C).

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

125 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

6 ms

SOFTWARE

93C66A-E/SN by Microchip Technology

93C66A-E/SN

Microchip Technology

93C66A-E/SN by Microchip Tech is a 512x8 EEPROM with 1MHz clock freq, 2mA max supply current, and 1000000 write/erase cycles. Ideal for automotive applications due to TS16949 screening level and -40 to 125°C operating temp range. Features serial bus type MICROWIRE and software write protection.

1 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

30

YES

3.9 mm

2 ms

SOFTWARE

93LC46BXT-E/SN by Microchip Technology

93LC46BXT-E/SN

Microchip Technology

93LC46BXT-E/SN by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 2MHz. It has a supply voltage range of 2.5V to 5.5V and offers software write protection. Ideal for automotive applications, it features serial communication via Microwire bus and can endure up to 1,000,000 write/erase cycles.

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

125 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

6 ms

SOFTWARE

93LC56B-E/ST by Microchip Technology

93LC56B-E/ST

Microchip Technology

EEPROM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 128;

8

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

2048 bit

EEPROM

16

1

1

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.2 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

YES

3 mm

6 ms

SOFTWARE

93LC56C-E/ST by Microchip Technology

93LC56C-E/ST

Microchip Technology

93LC56C-E/ST by Microchip Tech is a 2048-bit EEPROM with 128x16 organization, operating at 2MHz. It has a supply voltage range of 2.5-5.5V and withstands automotive-grade temperatures (-40 to 125°C). Ideal for applications requiring low power consumption and high endurance, such as automotive electronics and industrial control systems.

8

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

2048 bit

EEPROM

16

1

1

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.2 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

YES

3 mm

6 ms

SOFTWARE

93LC66C-I/MS by Microchip Technology

93LC66C-I/MS

Microchip Technology

93LC66C-I/MS by Microchip Tech is a 256x16 EEPROM with 3MHz clock freq. Ideal for industrial temp applications, it offers 1M write/erase cycles, MICROWIRE serial bus, and software write protection. Operating at 3V, it has a standby current of 0.000001A and can withstand -40 to 85°C temps.

ALSO CONFIGURABLE AS 512 X 8

8

3 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

4096 bit

EEPROM

16

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.1 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

YES

3 mm

6 ms

SOFTWARE

93LC66CT-I/ST by Microchip Technology

93LC66CT-I/ST

Microchip Technology

93LC66CT-I/ST by Microchip Tech is a 256x16 EEPROM with 3V nominal voltage, operating at -40 to 85°C. It features serial interface, software write protection, and MICROWIRE bus type. Ideal for industrial applications requiring low power consumption and high endurance of 1M cycles.

ALSO CONFIGURABLE AS 512 X 8

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

4096 bit

EEPROM

16

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.2 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

YES

3 mm

6 ms

SOFTWARE

93LC86C-I/ST by Microchip Technology

93LC86C-I/ST

Microchip Technology

93LC86C-I/ST by Microchip Tech is a 1KX16 EEPROM with 16384-bit memory density. Operating at 3V, it offers 1000000 write/erase cycles and serial bus type MICROWIRE. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

8

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

16384 bit

EEPROM

16

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.2 mm

MICROWIRE

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

YES

3 mm

5 ms

SOFTWARE

25LC640A-M/SN by Microchip Technology

25LC640A-M/SN

Microchip Technology

25LC640A-M/SN by Microchip Technology is an EEPROM with 8KX8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at temperatures ranging from -55 to 125 °C and has a memory density of 65536 bit. Ideal for applications requiring high endurance and low standby current consumption.

2.5V TO 4.5V @ 5MHz

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-55 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

XCF01SVO20C by Xilinx

XCF01SVO20C

Xilinx

Xilinx XCF01SVO20C is a 1MX1 EEPROM with 1048576 bit memory density. Operating at 3.3V, it offers 20000 Write/Erase Cycles endurance and supports NOR type technology. Ideal for industrial applications requiring configuration memory in a small outline package.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e0

6.5024 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

225

1.8/3.3,3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF02SVO20C by Xilinx

XCF02SVO20C

Xilinx

Xilinx XCF02SVO20C is a 2MX1 EEPROM with 2097152-bit memory density. Operating at 3.3V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, it is ideal for configuration memory in devices requiring low standby current and high endurance.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e0

6.5024 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

225

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF04SVO20C by Xilinx

XCF04SVO20C

Xilinx

Xilinx XCF04SVO20C is a 3.3V EEPROM with 4MX1 organization, NOR type, and 33MHz clock frequency. Ideal for industrial applications, it offers 4194304-bit memory density in a small outline package with dual terminals and Gull Wing form factor.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

R-PDSO-G20

e0

6.5024 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

240

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

24AA024-I/MS by Microchip Technology

24AA024-I/MS

Microchip Technology

24AA024-I/MS by Microchip Technology is a small outline EEPROM with a memory density of 2048 bit. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. It is commonly used in industrial applications for its high endurance of 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1.1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA256T-E/MF by Microchip Technology

24AA256T-E/MF

Microchip Technology

24AA256T-E/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 2.5V and featuring a max clock frequency of 0.4 MHz. Ideal for automotive applications, it offers 1000000 Write/Erase cycles endurance, I2C serial bus type, and -40 to 125 °C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24AA256T-E/MS by Microchip Technology

24AA256T-E/MS

Microchip Technology

24AA256T-E/MS by Microchip Tech is an EEPROM with 32KX8 organization, 32768 words, and 262144-bit memory density. Operating at -40 to 125 °C, it has a max clock frequency of 0.4 MHz for automotive applications. Featuring I2C serial bus type, it offers 1000000 write/erase cycles endurance.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA256T-E/SM by Microchip Technology

24AA256T-E/SM

Microchip Technology

24AA256T-E/SM by Microchip Technology is a 32Kx8 EEPROM with 262144-bit memory density. Operating at 2.5V, it offers 1000000 write/erase cycles and supports I2C serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

262144 bit

EEPROM

8

3

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

XCF08PFS48C by Xilinx

XCF08PFS48C

Xilinx

Xilinx XCF08PFS48C is a 1.8V EEPROM with 8388608-bit memory density, suitable for industrial applications. It operates synchronously at up to 33MHz clock frequency and offers 20000 write/erase cycles. With a compact rectangular package style and thin profile, it's ideal for space-constrained designs requiring reliable configuration memory.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PVO48C by Xilinx

XCF08PVO48C

Xilinx

Xilinx XCF08PVO48C is a 1.8V EEPROM with 8388608-bit memory density, operating at up to 33MHz clock frequency. Ideal for industrial applications, it offers 20000 write/erase cycles and features a small outline package style.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PDSO-G48

e0

18.45 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE

SERIAL

225

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF16PFS48C by Xilinx

XCF16PFS48C

Xilinx

Xilinx XCF16PFS48C is a 1.8V EEPROM with 16MX1 organization and 16777216 bit memory density. It operates in synchronous mode and has a max supply current of 40mA. This configuration memory is commonly used in industrial applications for storing data with endurance of 20000 write/erase cycles.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF32PFS48C by Xilinx

XCF32PFS48C

Xilinx

Xilinx XCF32PFS48C is a 32MX1 EEPROM with 33554432-bit memory density. It operates at 1.8V, has 48 terminals, and supports industrial temperature grade. Ideal for configuration memory applications, it offers 20000 write/erase cycles and serial interface with NOR type technology.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

24AA64-E/P by Microchip Technology

24AA64-E/P

Microchip Technology

24AA64-E/P by Microchip Technology is an 8KX8 EEPROM with I2C control byte 1010DDDR. Operating at -40 to 125 °C, it offers 1000000 write/erase cycles and a max clock frequency of 0.4 MHz. Ideal for automotive applications due to AEC-Q100 screening level and hardwire write protection feature.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

4.5

AEC-Q100

5.334 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

7.62 mm

5 ms

HARDWARE

24AA64-E/ST by Microchip Technology

24AA64-E/ST

Microchip Technology

24AA64-E/ST by Microchip Technology is an EEPROM with 8KX8 organization, operating at -40 to 125 °C. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level and small outline package style.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

4.5

AEC-Q100

1.2 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA64-E/SM by Microchip Technology

24AA64-E/SM

Microchip Technology

24AA64-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, 65536 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C operating temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-J8

e3

5.26 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.10

RECTANGULAR

SMALL OUTLINE

SERIAL

260

4.5

AEC-Q100

2.03 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

J BEND

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

M24512-WMW6G by STMicroelectronics

M24512-WMW6G

STMicroelectronics

M24512-WMW6G by STMicroelectronics is a 64Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w -40 °C to 85 °C, supports 3/5V supply, and offers 1M write/erase cycles. Ideal for industrial applications requiring reliable data storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.62 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.5 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.62 mm

5 ms

HARDWARE

M24512-WMW6TG by STMicroelectronics

M24512-WMW6TG

STMicroelectronics

STMicroelectronics M24512-WMW6TG is an EEPROM with 64KX8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.62 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.5 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE