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24AA512-I/ST14

Microchip Technology

24AA512-I/ST14 by Microchip Technology

24AA512-I/ST14 by Microchip is a 64KX8 EEPROM with I2C control byte. It operates at 2.5V, has 14 terminals in a small outline package, and offers write protection. Ideal for industrial applications requiring reliable non-volatile memory storage with up to 1000000 write/erase cycles.

Median Price

$1.817

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 12 parts In-Stock

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$1.600

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Verical

USA . 12 parts In-Stock

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$1.817

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$1.817

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Mouser Electronics

USA . 784 parts In-Stock

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$2.240

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784

$2.240

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Vyrian

USA . 8,999 parts In-Stock

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VNN

France . 718 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 93 parts In-Stock

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$1.360

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$1.360

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Semicontronic

India . 93 parts In-Stock

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$1.360

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$1.326

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$1.319

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93

$1.360

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$1.319

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Aztec Data Supply Inc.

USA . 2,613 parts In-Stock

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$4.220

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Corohmni

South Africa . 111 parts In-Stock

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$4.772

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AZTECH Wire

Italy . 877 parts In-Stock

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$5.871

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Andel Nordic

Denmark . 4,209 parts In-Stock

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$6.244

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$5.995

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$5.995

Microchip USA

USA . 1,220 parts In-Stock

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$13.715

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Lixinc

USA . 12,302 parts In-Stock

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West Coast Incorporated

USA . 6,943 parts In-Stock

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Continental Prestige Electronics

USA . 3,905 parts In-Stock

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Argo Parts USA

USA . 1,854 parts In-Stock

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Perfect Parts

USA . 633 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Unlock endless possibilities with the 24AA512-I/ST14 by Microchip Technology! This top-quality EEPROM offers unparalleled reliability and performance, perfect for a wide range of applications. With its industrial-grade technology and impressive endurance of 1,000,000 write/erase cycles, this memory IC ensures your data is safe and secure. Experience the benefits of seamless data storage and retrieval with this innovative product. Elevate your projects with Microchip Technology's trusted solutions today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 2.5

The low nominal supply voltage of 2.5V makes this EEPROM energy-efficient and suitable for battery-powered devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise and efficient data transfers, enhancing overall performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this EEPROM can withstand harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The EEPROM can operate in low-temperature environments without any issues, increasing its versatility.

Endurance: 1000000 Write/Erase Cycles

With a high endurance rating, this EEPROM can handle numerous write and erase cycles, ensuring reliable performance over time.

Memory Density: 524288 bit

The high memory density allows for storing a large amount of data in a compact space, making it ideal for applications with limited memory capacity.

Technical Specifications

EEPROM 24AA512-I/ST14 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

5 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

14

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

4.4 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA512-I/ST14 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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