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93AA46CX-I/SN

Microchip Technology

93AA46CX-I/SN by Microchip Technology

Microchip Technology's 93AA46CX-I/SN is a serial EEPROM with 64x16 organization, operating at 2.5V and up to 3MHz clock frequency. Ideal for industrial applications, it offers 1000000 write/erase cycles, MICROWIRE interface, and software write protection for secure data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,249 parts In-Stock

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VNN

France . 2,599 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Corohmni

South Africa . 968 parts In-Stock

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$4.521

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968

$4.521

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AZTECH Wire

Italy . 736 parts In-Stock

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$10.540

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736

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QUARKTWIN TECHNOLOGY LTD

USA . 8,840 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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QualityLine Systems

Poland . 5,287 parts In-Stock

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Marpe Global Electronics

Taiwan . 5,261 parts In-Stock

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XL Components Corporation

Australia . 5,182 parts In-Stock

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Argo Parts USA

USA . 4,198 parts In-Stock

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Continental Prestige Electronics

USA . 2,869 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 93AA46CX-I/SN EEPROM by Microchip Technology. Designed with precision and quality in mind, this small outline memory chip offers industrial-grade performance for a wide range of applications. With an impressive endurance of 1,000,000 write/erase cycles, this EEPROM provides customers with a durable and long-lasting solution for their data storage needs. Experience the benefits of seamless operation, high-speed clock frequency, and software write protection, all in a compact and efficient package. Trust Microchip Technology to deliver superior quality and performance with the 93AA46CX-I/SN EEPROM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring longevity and reliability.

Surface Mount: YES

Easy installation and space-saving design for efficient PCB layout.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing control and efficient data transfer.

Nominal Supply Voltage / Vsup (V): 2.5

Stable supply voltage for consistent performance of the EEPROM.

Write Protection: SOFTWARE

Software-enabled write protection prevents accidental data corruption or erasure.

Maximum Clock Frequency (fCLK): 3 MHz

High clock frequency allows for fast read and write operations, increasing overall speed of the EEPROM.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures long-term reliability and data integrity of the EEPROM.

Memory IC Type: EEPROM

Specifically designed for non-volatile memory storage, making it ideal for applications requiring data retention even when power is removed.

Technical Specifications

EEPROM 93AA46CX-I/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

3 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Ready or Busy:

YES

Reverse Pinout:

NO

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93AA46CX-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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