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93AA66CT-I/SNG

Microchip Technology

93AA66CT-I/SNG by Microchip Technology

93AA66CT-I/SNG by Microchip Technology is a small outline EEPROM with 256x16 organization, operating at 2.5V and up to 3MHz clock frequency. Suitable for industrial applications, it offers 1000000 write/erase cycles, serial bus type Microwire, and software write protection feature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 202 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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VNN

France . 10 parts In-Stock

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Corohmni

South Africa . 219 parts In-Stock

1+ parts

$3.608

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219

$3.608

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Aztec Data Supply Inc.

USA . 4,967 parts In-Stock

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$5.070

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$5.070

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Ampacity Inc.

Singapore . 1,065 parts In-Stock

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$9.000

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$9.000

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AZTECH Wire

Italy . 809 parts In-Stock

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$11.745

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809

$11.745

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West Coast Incorporated

USA . 4,317 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 352 parts In-Stock

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Continental Prestige Electronics

USA . 24 parts In-Stock

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Overview

Elevate your electronic projects with the 93AA66CT-I/SNG EEPROM by Microchip Technology. Known for their superior quality and reliability, Microchip Technology offers a wide range of innovative solutions for various applications. This EEPROM provides unparalleled value, benefits, and advantages for customers seeking efficient data storage and retrieval. Whether you're working on consumer electronics, industrial automation, or automotive systems, this product's small outline package, high endurance, and software write protection make it an ideal choice. Trust Microchip Technology to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components due to its durability and resistance to environmental factors, making the EEPROM reliable for various applications.

Nominal Supply Voltage / Vsup (V): 2.5

The low nominal supply voltage of 2.5V allows for efficient power consumption, making the EEPROM suitable for portable devices or systems with strict power requirements.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred and processed in a timely manner, enhancing overall performance and reliability of the EEPROM.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this EEPROM can withstand elevated temperatures without compromising its functionality, ideal for industrial or automotive applications.

Memory Density: 4096 bit

The high memory density of 4096 bits allows for storing a large amount of data in a compact space, making this EEPROM suitable for applications requiring substantial data storage.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating ensures the EEPROM can withstand frequent read and write operations, extending its lifespan and reliability for long-term use.

Serial Bus Type: MICROWIRE

Microwire serial bus interface enables efficient data communication between the EEPROM and the microcontroller, offering a simple and cost-effective solution for data transfer.

Technical Specifications

EEPROM 93AA66CT-I/SNG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

ALSO CONFIGURABLE AS 512 X 8

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

3 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93AA66CT-I/SNG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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