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93AA56BT-I/OTG

Microchip Technology

93AA56BT-I/OTG by Microchip Technology

Microchip Technology's 93AA56BT-I/OTG is a serial EEPROM with 2048-bit memory density, operating at 1MHz clock frequency. It features software write protection and industrial temperature grade, suitable for applications requiring low-profile memory solutions. With 1000000 write/erase cycles endurance, it offers reliable data storage in compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 1,804 parts In-Stock

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Vyrian

USA . 713 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Vyrian

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Aztec Data Supply Inc.

USA . 1,814 parts In-Stock

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$2.340

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Ampacity Inc.

Singapore . 523 parts In-Stock

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$4.000

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Corohmni

South Africa . 986 parts In-Stock

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$5.534

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AZTECH Wire

Italy . 284 parts In-Stock

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$8.697

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Semicontronic

India . 889 parts In-Stock

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$16.000

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$15.600

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$15.520

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889

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Ledger Components

France . 7,823 parts In-Stock

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LMD Electronica

Estonia . 5,314 parts In-Stock

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LOOK Integrated Logistics

Peru . 3,857 parts In-Stock

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NIA Electronics

USA . 2,112 parts In-Stock

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Argo Parts USA

USA . 1,367 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Continental Prestige Electronics

USA . 364 parts In-Stock

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Montano Global Distributors

Canada . 15 parts In-Stock

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Overview

Unlock endless possibilities with the 93AA56BT-I/OTG by Microchip Technology, a cutting-edge EEPROM that guarantees top-notch quality and reliability. Ideal for various industrial applications, this tiny yet powerful device offers unparalleled value with its impressive endurance of 1,000,000 write/erase cycles. With a wide operating temperature range and low power consumption, this EEPROM is the perfect choice for customers seeking dependable performance and long-lasting durability in their projects. Elevate your designs with the 93AA56BT-I/OTG and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and facilitating automated assembly.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfers, improving overall performance and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage level, making it versatile and compatible with various systems.

Memory Density: 2048 bit

Offers ample storage capacity for data, allowing for versatile usage in different applications.

Endurance: 1000000 Write/Erase Cycles

Provides high endurance for frequent read/write operations, ensuring reliability and longevity.

Technical Specifications

EEPROM 93AA56BT-I/OTG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

1.55 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93AA56BT-I/OTG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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