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93AA46C-I/ST

Microchip Technology

93AA46C-I/ST by Microchip Technology

93AA46C-I/ST by Microchip Technology is an EEPROM with 64x16 organization, 3 MHz clock frequency, and 1.8V min supply voltage. It is used in industrial applications for software write protection and MICROWIRE serial bus communication.

Median Price

$0.385

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Microchip Technology

USA . 800 parts In-Stock

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$0.370

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$0.350

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$0.340

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$0.300

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$0.300

Mouser Electronics

USA . 943 parts In-Stock

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$0.400

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$0.372

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943

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NAC Semi

USA . 600 parts In-Stock

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$0.400

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$0.360

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$0.330

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North Shore Components

USA . 1,173 parts In-Stock

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Chip Stock

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VNN

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Nova Conductors

Japan . 500 parts In-Stock

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Ampacity Inc.

Singapore . 430 parts In-Stock

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$0.315

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Aztec Data Supply Inc.

USA . 26 parts In-Stock

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$4.596

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Corohmni

South Africa . 5 parts In-Stock

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$5.487

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West Coast Incorporated

USA . 3,873 parts In-Stock

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Continental Prestige Electronics

USA . 3,163 parts In-Stock

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Argo Parts USA

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Netroflash

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Overview

Unlock endless possibilities with the 93AA46C-I/ST by Microchip Technology, a top-quality EEPROM that offers unparalleled reliability and performance. Ideal for industrial applications, this memory IC boasts a high endurance of 1,000,000 write/erase cycles, ensuring long-lasting functionality. With a compact design and low power consumption, this EEPROM is a cost-effective solution that delivers exceptional value to customers. Trust Microchip Technology for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the EEPROM, making it suitable for various environments.

Surface Mount: YES

Being surface mountable makes the EEPROM easier to integrate into circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 2.5

The 2.5V supply voltage is a common voltage level in many electronic systems, ensuring compatibility and ease of integration.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EEPROM can withstand high temperature conditions, making it suitable for industrial applications.

Write Protection: SOFTWARE

Software-based write protection adds an extra layer of security to the EEPROM, preventing unauthorized changes to the stored data.

Memory Density: 1024 bit

With a memory density of 1024 bits, this EEPROM offers a good balance between storage capacity and efficiency for various applications.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1,000,000 write/erase cycles ensures long-lasting reliability and data integrity for frequent read/write operations.

Technical Specifications

EEPROM 93AA46C-I/ST attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

3 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Ready or Busy:

YES

Reverse Pinout:

NO

Screening Level:

TS 16949

Maximum Seated Height:

1.2 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93AA46C-I/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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