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24LC512T-I/ST14

Microchip Technology

24LC512T-I/ST14 by Microchip Technology

24LC512T-I/ST14 by Microchip Tech is a 64KX8 EEPROM with I2C control byte. Operating at 4.5V, it offers 1000000 write/erase cycles and -40 to 85°C temp range. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 34,909 parts In-Stock

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Chip Stock

USA . 10,670 parts In-Stock

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10,670

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Vyrian

USA . 8,881 parts In-Stock

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8,881

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Prism Electronics

USA . 513 parts In-Stock

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513

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Corohmni

South Africa . 564 parts In-Stock

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$2.432

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564

$2.432

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Aztec Data Supply Inc.

USA . 715 parts In-Stock

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$4.560

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715

$4.560

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Ampacity Inc.

Singapore . 273 parts In-Stock

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$6.000

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273

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Microchip USA

USA . 4,566 parts In-Stock

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$12.881

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$12.881

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AZTECH Wire

Italy . 797 parts In-Stock

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$15.903

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QUARKTWIN TECHNOLOGY LTD

USA . 21,264 parts In-Stock

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Metaverse IC Inc.

Canada . 19,677 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,014 parts In-Stock

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Continental Prestige Electronics

USA . 3,451 parts In-Stock

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Argo Parts USA

USA . 2,444 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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Fulton Briggs Corp.

USA . 275 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 24LC512T-I/ST14 by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology ensures top-notch quality and performance for its EEPROM products. Ideal for a wide range of applications, this EEPROM offers customers unparalleled value, benefits, and advantages. From enhanced data security to efficient memory management, the 24LC512T-I/ST14 is the perfect solution for your storage needs. Trust Microchip Technology to deliver excellence in every product.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material ensures durability and protection for the EEPROM, making it a reliable choice.

Surface Mount:

YES - This feature allows for easy and secure installation in electronic devices, enhancing convenience.

Package Shape:

RECTANGULAR - The rectangular shape is space-efficient, making it suitable for compact applications.

Operating Mode:

SYNCHRONOUS - Synchronous operation ensures consistent and efficient performance of the EEPROM.

Nominal Supply Voltage (Vsup):

4.5V - The nominal voltage provides stable power to the EEPROM, ensuring reliable operation.

Power Supplies (V):

3/5 - The multiple power supply options enhance compatibility with various systems.

No. of Terminals:

14 - The ample number of terminals allow for versatile connectivity options in different setups.

Package Style:

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH - This package style is space-saving and ideal for compact designs.

Maximum Operating Temperature:

85 °C - The high operating temperature range ensures the EEPROM can function reliably in various environments.

Organization:

64KX8 - The organization structure allows for efficient data storage and retrieval processes.

Minimum Operating Temperature:

40 °C - The EEPROM can operate effectively even in extreme cold conditions.

Terminal Finish:

Matte Tin (Sn) - The matte tin finish provides good conductivity and corrosion resistance for long-lasting performance.

I2C Control Byte:

1010DDDR - The I2C control byte simplifies communication protocols and enhances compatibility with other devices.

Terminal Position:

DUAL - The dual terminal position offers flexibility in circuit board layout and connection arrangements.

Write Protection:

HARDWARE - The hardware write protection feature prevents accidental data loss or corruption.

Maximum Seated Height:

1.2 mm - The low profile design allows for easy integration into thin devices or tight spaces.

Maximum Clock Frequency (fCLK):

0.4 MHz - The high clock frequency enables fast data transfer and operations.

Width:

4.4 mm - The compact width makes the EEPROM suitable for applications with limited space.

Minimum Supply Voltage (Vsup):

2.5 V - The low minimum voltage requirement ensures compatibility with a wide range of power sources.

Maximum Time At Peak Reflow Temperature (s):

40 - The EEPROM can withstand peak reflow temperatures for a specified time, ensuring robustness during production processes.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature tolerance ensures the EEPROM can endure manufacturing processes without damage.

Length:

5 mm - The short length of the EEPROM makes it suitable for applications where space is limited.

Temperature Grade:

INDUSTRIAL - The industrial-grade temperature rating allows the EEPROM to operate reliably in harsh industrial environments.

Technology:

CMOS - The CMOS technology offers low power consumption and high noise immunity for efficient operation.

Parallel or Serial:

SERIAL - The serial operation allows for simpler interface connections and data transfer.

Terminal Form:

GULL WING - The gull wing terminal form provides secure connections and ease of soldering during assembly.

Maximum Supply Current:

5 mA - The low supply current requirement helps in reducing power consumption and heat dissipation.

No. of Words:

65536 words - The extensive word capacity enables storing large amounts of data in the EEPROM.

Memory Width:

8 - The 8-bit memory width allows for efficient data processing and compatibility with various systems.

Minimum Data Retention Time:

200 - The EEPROM can retain data for a minimum time frame, ensuring data integrity during power-off situations.

Terminal Pitch:

0.65 mm - The small terminal pitch enhances connectivity options and board layout flexibility.

No. of Words Code:

64K - The word code specification simplifies data organization and management in the EEPROM.

Maximum Supply Voltage (Vsup):

5.5 V - The high maximum voltage tolerance ensures the EEPROM can accommodate varying voltage levels.

Endurance:

1000000 Write/Erase Cycles - The high endurance level allows for frequent read/write operations without compromising performance.

Serial Bus Type:

I2C - The I2C bus type offers a simple and efficient communication interface for data transfer.

Maximum Write Cycle Time (tWC):

5 ms - The fast write cycle time enables quick data updating and processing.

Memory Density:

524288 bit - The high memory density provides ample storage capacity for data-intensive applications.

Memory IC Type:

EEPROM - The EEPROM type ensures non-volatile memory storage for critical data and program code.

Maximum Standby Current:

0.000001 Amp - The extremely low standby current consumption helps in conserving power and extending battery life.

Technical Specifications

EEPROM 24LC512T-I/ST14 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

5 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

14

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

4.4 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC512T-I/ST14 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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