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93AA46CXT-I/SN

Microchip Technology

93AA46CXT-I/SN by Microchip Technology

93AA46CXT-I/SN by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 2.5V and featuring a max clock frequency of 3MHz. Ideal for industrial applications, it offers software write protection, MICROWIRE serial bus type, and TOTEM POLE output characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 12,338 parts In-Stock

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Vyrian

USA . 2,023 parts In-Stock

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Nova Conductors

Japan . 76 parts In-Stock

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Corohmni

South Africa . 241 parts In-Stock

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$3.163

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AZTECH Wire

Italy . 389 parts In-Stock

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Ampacity Inc.

Singapore . 1,399 parts In-Stock

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Authorized Procurement Solutions

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Marpe Global Electronics

Taiwan . 6,961 parts In-Stock

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QualityLine Systems

Poland . 6,961 parts In-Stock

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XL Components Corporation

Australia . 6,961 parts In-Stock

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Argo Parts USA

USA . 4,839 parts In-Stock

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Continental Prestige Electronics

USA . 369 parts In-Stock

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Netroflash

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Overview

Unlock endless possibilities with the 93AA46CXT-I/SN by Microchip Technology, a top-tier EEPROM that guarantees superior performance and reliability. Crafted with precision and expertise, this small outline package boasts high endurance, low power consumption, and fast operation. Ideal for industrial applications, this device ensures data integrity and security, making it a valuable asset for your projects. Trust Microchip Technology to deliver innovative solutions that exceed expectations and propel your designs to new heights. Choose quality, choose value, choose the 93AA46CXT-I/SN.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM chip, making it suitable for various environmental conditions.

Surface Mount: YES

Allows for easy integration onto PCBs, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 2.5

Operates efficiently at a low voltage, reducing power consumption and extending battery life in devices.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, making it suitable for industrial applications where temperature fluctuations are common.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EEPROM chip energy efficient and reliable.

Endurance: 1000000 Write/Erase Cycles

High endurance capability ensures reliable data storage and retention over a long period of time, making it a durable choice for use in various electronic devices.

Technical Specifications

EEPROM 93AA46CXT-I/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

3 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Ready or Busy:

YES

Reverse Pinout:

NO

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93AA46CXT-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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