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24AA256T-E/MF

Microchip Technology

24AA256T-E/MF by Microchip Technology

24AA256T-E/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 2.5V and featuring a max clock frequency of 0.4 MHz. Ideal for automotive applications, it offers 1000000 Write/Erase cycles endurance, I2C serial bus type, and -40 to 125 °C temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,610 parts In-Stock

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2,610

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VNN

France . 2,272 parts In-Stock

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Nova Conductors

Japan . 45 parts In-Stock

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45

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Distributors (Availability)

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Corohmni

South Africa . 943 parts In-Stock

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$5.663

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943

$5.663

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Ampacity Inc.

Singapore . 490 parts In-Stock

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$6.000

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490

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Microchip USA

USA . 4,636 parts In-Stock

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$8.991

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$8.991

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AZTECH Wire

Italy . 1,016 parts In-Stock

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$20.220

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1,016

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XL Components Corporation

Australia . 6,041 parts In-Stock

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6,041

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Marpe Global Electronics

Taiwan . 4,637 parts In-Stock

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Argo Parts USA

USA . 4,343 parts In-Stock

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Continental Prestige Electronics

USA . 2,312 parts In-Stock

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QualityLine Systems

Poland . 1,862 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Overview

Unlock endless possibilities with the 24AA256T-E/MF EEPROM by Microchip Technology. Crafted with precision and reliability in mind, this small yet powerful memory device offers a wide array of applications in automotive and industrial settings. With its high endurance of 1,000,000 write/erase cycles and low power consumption, this EEPROM ensures seamless performance and long-lasting durability. Embrace innovation and efficiency with the 24AA256T-E/MF - your key to a smarter, more connected future.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand various environmental conditions, making the EEPROM reliable for use in different applications.

Surface Mount: YES

Surface mount technology allows for easy installation and minimizes the space required on a PCB, making it convenient for compact designs.

Screening Level: AEC-Q100

Compliance with AEC-Q100 ensures that the EEPROM meets automotive quality standards, making it suitable for automotive applications where reliability is crucial.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data integrity and reliability in data transfer, making it a good choice for applications where timing is critical.

Nominal Supply Voltage / Vsup (V): 2.5

The nominal supply voltage of 2.5V is common and widely available, making it easy to integrate the EEPROM into various systems.

Memory Density: 262144 bit

With a high memory density, this EEPROM can store large amounts of data, making it suitable for applications requiring extensive data storage.

Endurance: 1000000 Write/Erase Cycles

The high endurance level ensures longevity and reliability, allowing the EEPROM to withstand frequent read/write operations without degradation.

Serial Bus Type: I2C

The I2C serial bus interface enables easy communication with other devices, simplifying the system design and integration process.

Technical Specifications

EEPROM 24AA256T-E/MF attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

6 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA256T-E/MF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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