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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
LE2416RDXATDG by Onsemi

LE2416RDXATDG

Onsemi

LE2416RDXATDG by Onsemi is a 2Kx8 EEPROM with 16384-bit memory density. It operates at 1MHz clock frequency, has I2C serial bus type, and supports synchronous mode. Ideal for industrial applications requiring low power consumption and reliable non-volatile memory storage.

1 MHz

R-PBGA-B6

e1

1.2 mm

16384 bit

EEPROM

8

1

1

6

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

.33 mm

I2C

3.6 V

1.7 V

2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

30

.8 mm

5 ms

LE2464DXATBG by Onsemi

LE2464DXATBG

Onsemi

LE2464DXATBG by Onsemi is a 8KX8 EEPROM with 65536 bit memory density. It operates at -40 to 85 °C, with Vsup ranging from 1.7V to 3.6V. Suitable for industrial applications, it features I2C serial bus type and very thin profile grid array package style.

1 MHz

R-PBGA-B6

e1

1.2 mm

65536 bit

EEPROM

8

1

1

6

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

.33 mm

I2C

3.6 V

1.7 V

2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

30

.8 mm

5 ms

CAV25512HU5E-GT3 by Onsemi

CAV25512HU5E-GT3

Onsemi

CAV25512HU5E-GT3 by Onsemi is an AEC-Q100 EEPROM with 64KX8 organization, operating at 5V. It features a serial SPI interface, 10 MHz clock frequency, and -40 to 125°C temperature range. Ideal for automotive applications requiring reliable non-volatile memory storage in a compact form factor.

10 MHz

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

AEC-Q100

.55 mm

SPI

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

NV25M01DWUTG by Onsemi

NV25M01DWUTG

Onsemi

NV25M01DWUTG by Onsemi is an AEC-Q100 EEPROM with 128KX8 organization, SPI serial bus type, and 5 MHz clock frequency. Ideal for industrial applications, it operates b/w -40 to 105 °C with a supply voltage range of 1.8V to 5.5V.

5 MHz

R-PDSO-G8

e4

4.9 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

105 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

AEC-Q100

1.75 mm

SPI

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

AT28C64B-15JU-235 by Microchip Technology

AT28C64B-15JU-235

Microchip Technology

AT28C64B-15JU-235 by Microchip: 8KX8 EEPROM, 5V, 32-terminals, -40 to 85°C temp range. Ideal for industrial applications requiring reliable non-volatile memory with 100k write/erase cycles and fast access time of 150ns.

150 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

65536 bit

EEPROM

8

3

1

1

32

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

.0001 Amp

400 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28C64B-15TU-T by Microchip Technology

AT28C64B-15TU-T

Microchip Technology

Microchip AT28C64B-15TU-T is an 8KX8 EEPROM with 100000 Write/Erase Cycles, operating at -40 to 85 °C. It has a supply voltage range of 4.5V to 5.5V and offers fast access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact thin profile package.

150 ns

100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE

10

100000 Write/Erase Cycles

R-PDSO-G28

e3

11.8 mm

65536 bit

EEPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.55 mm

DUAL

8 mm

10 ms

CAT24S64C4ATR by Onsemi

CAT24S64C4ATR

Onsemi

CAT24S64C4ATR by Onsemi is a 8KX8 EEPROM with 65536 bit memory density. It operates at 1 MHz clock frequency, has I2C serial bus type, and supports synchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact grid array package.

LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ

1 MHz

S-PBGA-B4

e1

.85 mm

65536 bit

EEPROM

8

1

1

4

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

.35 mm

I2C

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

30

.85 mm

5 ms

AT28LV010-20JU-051 by Microchip Technology

AT28LV010-20JU-051

Microchip Technology

AT28LV010-20JU-051 by Microchip Technology is a 128KX8 EEPROM with 131072 words. It operates at 3.3V, has a max access time of 200ns, and offers parallel programming mode. This chip is ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

200 ns

R-PQCC-J32

13.97 mm

1048576 bit

EEPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

3

3.556 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

11.43 mm

10 ms

AT28LV010-20JU-235 by Microchip Technology

AT28LV010-20JU-235

Microchip Technology

AT28LV010-20JU-235 by Microchip is a 128Kx8 EEPROM with 3.3V supply, 200ns access time, and 100000 write/erase cycles. It is used in industrial applications for non-volatile memory storage due to its high endurance and parallel interface.

200 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

3

3.556 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20JU-319 by Microchip Technology

AT28LV010-20JU-319

Microchip Technology

AT28LV010-20JU-319 by Microchip Technology is a 128KX8 EEPROM with 3.3V supply voltage, 200ns access time, and 100000 write/erase cycles. It is used in industrial applications for non-volatile memory storage due to its high endurance and parallel interface.

200 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

EEPROM

8

3

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3

3.556 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20JU-630 by Microchip Technology

AT28LV010-20JU-630

Microchip Technology

AT28LV010-20JU-630 by Microchip is a 128KX8 EEPROM with 3.3V supply, operating from -40 to 85 °C. It offers 100000 Write/Erase Cycles, 200 ns access time, and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

200 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

3

3.556 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20TU-235 by Microchip Technology

AT28LV010-20TU-235

Microchip Technology

AT28LV010-20TU-235 by Microchip Technology is a 128Kx8 EEPROM with 100,000 Write/Erase Cycles. It operates at -40 to 85°C, with a programming voltage of 3V and max access time of 200ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

200 ns

10

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20TU-319 by Microchip Technology

AT28LV010-20TU-319

Microchip Technology

AT28LV010-20TU-319 by Microchip Tech is a 128KX8 EEPROM with 131072 words, operating at 3.3V. It offers 100000 Write/Erase Cycles, 200 ns Access Time, and supports Hardware/Software Write Protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact SMALL OUTLINE package.

200 ns

10

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

10 ms

HARDWARE/SOFTWARE

AT28C256-15JU-T by Microchip Technology

AT28C256-15JU-T

Microchip Technology

Microchip AT28C256-15JU-T is a 32Kx8 EEPROM with 150ns access time, operating at -40 to 85°C. It features asynchronous mode, 5V programming voltage, and parallel interface. Ideal for industrial applications requiring reliable non-volatile memory storage in compact chip carrier package.

150 ns

R-PQCC-J32

e3

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

10 ms

MR25H128APDF by Everspin Technologies

MR25H128APDF

Everspin Technologies

MR25H128APDF by Everspin Technologies is an EEPROM with 16KX8 organization, operating at 3V. It features a max clock frequency of 40 MHz and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous operation and small form factor with SPI serial bus interface.

40 MHz

R-PDSO-N8

6 mm

131072 bit

EEPROM

8

3

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

AEC-Q100

.9 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

AT28C256-15DM/883-815 by Microchip Technology

AT28C256-15DM/883-815

Microchip Technology

AT28C256-15DM/883-815 by Microchip Technology is a MILITARY-grade EEPROM with 32KX8 organization, 150 ns access time, and 10 ms write cycle time. It operates at 5V with -55 to 125 °C temperature range. Ideal for applications requiring reliable non-volatile memory in harsh environments.

150 ns

R-GDIP-T28

e0

37.215 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

125 Cel

-55 Cel

32KX8

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

MIL-STD-883 Class C

5.72 mm

5.5 V

4.5 V

5

NO

CMOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

10 ms

AT28C256E-15JU-T by Microchip Technology

AT28C256E-15JU-T

Microchip Technology

AT28C256E-15JU-T by Microchip Technology is a 32KX8 EEPROM with a max access time of 150 ns. It operates at a nominal voltage of 5V and has an industrial temperature grade. This memory IC is commonly used in applications requiring non-volatile storage.

150 ns

R-PQCC-J32

e3

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

AT28HC256E-12JU-T by Microchip Technology

AT28HC256E-12JU-T

Microchip Technology

AT28HC256E-12JU-T by Microchip: 32KX8 EEPROM with 120ns access time, operates at -40 to 85°C. Ideal for industrial applications requiring parallel memory technology and a supply voltage range of 4.5V to 5.5V. Package style is chip carrier with dimensions of 13.97mm x 11.43mm x 3.556mm, featuring J bend terminals on a rectangular body suitable for surface mount assembly.

120 ns

R-PQCC-J32

e3

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

FT24C04A-UTR-B by Fremont Micro Devices

FT24C04A-UTR-B

Fremont Micro Devices

FT24C04A-UTR-B by Fremont Micro Devices is a 4096-bit EEPROM with 512x8 organization, operating at 1 MHz clock frequency. It features I2C serial bus type, -40 to 85°C temperature range, and small outline thin profile package. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

IT ALSO HAVE FREQUENCY 0.4 MHZ OPERATES AT 1.8V

1 MHz

R-PDSO-G8

4.4 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

1.1 mm

I2C

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

FT24C04A-USR-T by Fremont Micro Devices

FT24C04A-USR-T

Fremont Micro Devices

FT24C04A-USR-T by Fremont Micro Devices is a 512x8 EEPROM with I2C serial bus, operating at 1 MHz. It has a supply voltage range of 2.5V to 5.5V and industrial temperature grade. Ideal for applications requiring small outline packages, such as data storage in industrial settings.

IT ALSO HAVE FREQUENCY 0.4 MHZ OPERATES AT 1.8V

1 MHz

R-PDSO-G8

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.75 mm

I2C

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

NV34C04MU3VTG by Onsemi

NV34C04MU3VTG

Onsemi

NV34C04MU3VTG by Onsemi is an EEPROM with 4Kx1 organization, operating at 2.5V, and featuring I2C control byte 1010DDDR. Ideal for automotive applications due to AEC-Q100 screening level, it offers 1000000 write/erase cycles endurance and operates in a temperature range of -40 to 125 °C.

IT ALSO OPERATES AT 1.7-3.6V SUPPLY VOLTAGE AT FREQUENCY 0.1 MHZ AND 0.4 MHZ

1 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

1

1

1

8

4096 words

4K

SYNCHRONOUS

125 Cel

-40 Cel

4KX1

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3.6

NO

AEC-Q100

.55 mm

I2C

.000001 Amp

1 mA

3.6 V

2.2 V

2.5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

4 ms

HARDWARE/SOFTWARE

NV25320MUW3VTBG by Onsemi

NV25320MUW3VTBG

Onsemi

NV25320MUW3VTBG by Onsemi is an AEC-Q100 EEPROM with 4KX8 organization, operating at -40 to 125 °C. It features a SPI serial bus type, 5V nominal voltage, and 10 MHz clock frequency. Ideal for automotive applications requiring reliable non-volatile memory storage in a compact form factor.

10 MHz

R-PDSO-N8

e4

3 mm

32768 bit

EEPROM

8

1

1

8

4096 words

4K

SYNCHRONOUS

125 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

AEC-Q100

.55 mm

SPI

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

CAT24C512YI-G by Onsemi

CAT24C512YI-G

Onsemi

CAT24C512YI-G by Onsemi is a 64KX8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and 524288 bit memory density. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

ALSO OPERATES WITH 1.8V MIN AT 4 KHZ

1 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.2 mm

I2C

.000002 Amp

2.5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE

CAT24M01WI-G by Onsemi

CAT24M01WI-G

Onsemi

CAT24M01WI-G by Onsemi is an EEPROM with 128KX8 organization, SPI serial bus type, and 1MHz clock frequency. Ideal for industrial applications, it offers 1000000 write/erase cycles endurance and operates at temperatures ranging from -40 to 85 °C.

IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY

1

1 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3.3

1.75 mm

SPI

.000002 Amp

5 mA

5.5 V

1.8 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

CAT25M01VI-G by Onsemi

CAT25M01VI-G

Onsemi

CAT25M01VI-G by Onsemi is an 8-terminal EEPROM with 128KX8 organization, operating at 2.5V and up to 10MHz clock frequency. Ideal for industrial applications, it offers SPI serial bus type, 1000000 write/erase cycles endurance, and -40 to 85 °C temperature range.

1

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.75 mm

SPI

.000001 Amp

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

M24512-HRDW6TP by STMicroelectronics

M24512-HRDW6TP

STMicroelectronics

M24512-HRDW6TP by STMicroelectronics is a serial EEPROM with 64K x 8 organization, operating b/w -40 °C and 85 °C. It features a max clock frequency of 0.4 MHz and supports I2C communication. Ideal for industrial applications requiring reliable data storage in compact designs.

.4 MHz

R-PDSO-G8

4.4 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

1.2 mm

I2C

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

24AA02T-I/OT16KVAO by Microchip Technology

24AA02T-I/OT16KVAO

Microchip Technology

Microchip Technology's 24AA02T-I/OT16KVAO is a 256x8 EEPROM with I2C control byte. Operating at 2.5V, it has a clock frequency of 0.4 MHz and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-G5

2.95 mm

2048 bit

EEPROM

8

1

1

5

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

2.5

AEC-Q100

1.45 mm

I2C

.000001 Amp

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

.95 mm

DUAL

1.63 mm

5 ms

HARDWARE

24CW160T-I/MUY by Microchip Technology

24CW160T-I/MUY

Microchip Technology

24CW160T-I/MUY by Microchip Technology is a small outline, heat sink EEPROM with a memory density of 16384 bit. It operates in synchronous mode with a max clock frequency of 1 MHz and has an endurance of 1000000 write/erase cycles. This EEPROM is commonly used in industrial applications that require reliable and non-volatile memory storage.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

3 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.55 mm

I2C

.000001 Amp

1 mA

5.5 V

1.6 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

2 mm

5 ms

SOFTWARE

24LC02BTE/OT16KVAO by Microchip Technology

24LC02BTE/OT16KVAO

Microchip Technology

24LC02BTE/OT16KVAO by Microchip Technology is a 256x8 EEPROM with 2048-bit memory density. Operating at 5V, it has a clock frequency of 0.4 MHz and supports I2C serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C temperature range.

.4 MHz

R-PDSO-G5

2.9 mm

2048 bit

EEPROM

8

1

5

256 words

256

SYNCHRONOUS

125 Cel

-40 Cel

256X8

PLASTIC/EPOXY

LSSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

AEC-Q100; TS 16949

1.45 mm

I2C

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

GULL WING

.95 mm

DUAL

1.6 mm

5 ms

25AA512T-I/SN16KVAO by Microchip Technology

25AA512T-I/SN16KVAO

Microchip Technology

Microchip Technology's 25AA512T-I/SN16KVAO is a serial EEPROM with 64KX8 organization, operating at 5V. It offers a max clock frequency of 20 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

2.5V TO 5.5V @ 0.1MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

5

AEC-Q100

1.75 mm

SPI

.000001 Amp

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

AT28C010-12JU-235 by Microchip Technology

AT28C010-12JU-235

Microchip Technology

AT28C010-12JU-235 by Microchip is a 128Kx8 EEPROM with 120ns access time, operating at -40 to 85°C. It has a 32-terminal Gull Wing package and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

120 ns

R-PDSO-G32

13.97 mm

1048576 bit

EEPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.43 mm

10 ms

AT28C010E-12JU-235 by Microchip Technology

AT28C010E-12JU-235

Microchip Technology

AT28C010E-12JU-235 by Microchip is a 128KX8 EEPROM with 131072 words. It operates at 5V, has a memory density of 1048576 bit, and offers an access time of 120 ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

120 ns

R-PDSO-G32

13.97 mm

1048576 bit

EEPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

11.43 mm

10 ms

AT28HC64B-12JU-T by Microchip Technology

AT28HC64B-12JU-T

Microchip Technology

AT28HC64B-12JU-T by Microchip Technology is an 8KX8 EEPROM with a 5V supply voltage, operating in industrial temperature range. It features 100000 Write/Erase cycles, 120 ns access time, and asynchronous mode. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

120 ns

NO

YES

10

100000 Write/Erase Cycles

R-PDSO-G32

13.97 mm

65536 bit

EEPROM

8

1

1

32

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.16

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

5

3.556 mm

.0001 Amp

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

YES

11.43 mm

10 ms

AT28HC64BF-12JU-T by Microchip Technology

AT28HC64BF-12JU-T

Microchip Technology

AT28HC64BF-12JU-T by Microchip is an EEPROM with 8KX8 organization, 3-STATE output, and operates at a voltage range of 4.5V to 5.5V. It is ideal for industrial applications requiring reliable non-volatile memory storage with features like asynchronous operation and 100000 Write/Erase cycles endurance.

120 ns

NO

YES

10

100000 Write/Erase Cycles

R-PDSO-G32

e3

13.97 mm

65536 bit

EEPROM

8

1

1

1

32

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.16

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

245

5

3.556 mm

.0001 Amp

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

YES

11.43 mm

10 ms

24AA01T-I/OT16KVAO by Microchip Technology

24AA01T-I/OT16KVAO

Microchip Technology

Microchip Technology's 24AA01T-I/OT16KVAO is a small outline EEPROM with 128x8 organization, operating at 0.4 MHz clock frequency. Ideal for industrial applications, it offers 1000000 write/erase cycles, I2C serial bus type, and hardware write protection.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-G5

e3

2.95 mm

1024 bit

EEPROM

8

1

1

5

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

2.5

AEC-Q100

1.45 mm

I2C

.000001 Amp

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.95 mm

DUAL

1.63 mm

5 ms

HARDWARE

24LC01BTE/OT16KVAO by Microchip Technology

24LC01BTE/OT16KVAO

Microchip Technology

24LC01BTE/OT16KVAO by Microchip is a 1024-bit EEPROM with 128x8 organization, operating at 5V. It features I2C serial bus, synchronous mode, and AEC-Q100 screening for automotive applications. With a small outline package and low profile design, it offers reliable data storage in harsh environments up to 125°C.

.4 MHz

R-PDSO-G5

e3

2.9 mm

1024 bit

EEPROM

8

1

5

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X8

PLASTIC/EPOXY

LSSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

260

AEC-Q100

1.45 mm

I2C

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.95 mm

DUAL

30

1.6 mm

5 ms

AT28BV256-20SU-T by Microchip Technology

AT28BV256-20SU-T

Microchip Technology

AT28BV256-20SU-T by Microchip Technology is a 32KX8 EEPROM with a memory density of 262144 bit. It operates at a voltage range of 2.7V to 3.6V and has an endurance of 10000 Write/Erase cycles. This EEPROM is commonly used in industrial applications for storing and retrieving data reliably.

200 ns

THE PART EXISTS IN EEPROM3V

10000 Write/Erase Cycles

R-PDSO-G28

e3

17.9 mm

262144 bit

EEPROM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

260

3

2.65 mm

.00005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

YES

7.5 mm

10 ms

HARDWARE/SOFTWARE

24AA16T-E/OT16KVAO by Microchip Technology

24AA16T-E/OT16KVAO

Microchip Technology

Microchip Technology's 24AA16T-E/OT16KVAO EEPROM operates at 2.5V with 2Kx8 organization, suitable for automotive applications. Features include I2C control byte, 1.45mm seated height, and endurance of 1M cycles. Ideal for low-profile designs requiring reliable data storage in harsh environments.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G5

2.9 mm

16384 bit

EEPROM

8

1

1

5

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

2.5

AEC-Q100

1.45 mm

I2C

.000005 Amp

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

GULL WING

.95 mm

DUAL

1.55 mm

5 ms

HARDWARE

24LC1025T-E/SN16KVAO by Microchip Technology

24LC1025T-E/SN16KVAO

Microchip Technology

24LC1025T-E/SN16KVAO by Microchip is an EEPROM with 128KX8 organization, operating at 5V. It features I2C control byte 1010MDDR and endurance of 1M cycles. Ideal for automotive applications due to AEC-Q100 screening, it offers a max clock frequency of 0.4 MHz and operates in the temperature range of -40 to 125 °C.

.4 MHz

200

1000000 Write/Erase Cycles

1010MDDR

R-PDSO-G8

e3

4.9 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

AEC-Q100

1.75 mm

I2C

.000005 Amp

5 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

25LC1024-E/SM16KVAO by Microchip Technology

25LC1024-E/SM16KVAO

Microchip Technology

Microchip Technology's 25LC1024-E/SM16KVAO is an AEC-Q100 EEPROM with 128KX8 organization, operating at 5V. It offers 20MHz clock frequency, SPI serial bus type, and endurance of 1M cycles. Ideal for automotive applications due to its -40 to 125 °C temperature range and small outline package style.

ALSO OPERATES AT 10MHZ

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.26 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

AEC-Q100

2.03 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

6 ms

HARDWARE/SOFTWARE

25LC1024T-E/SM16KVAO by Microchip Technology

25LC1024T-E/SM16KVAO

Microchip Technology

25LC1024T-E/SM16KVAO by Microchip Technology is a serial EEPROM with a memory density of 1,048,576 bits. It operates at a max clock frequency of 20 MHz and has an endurance of 1,000,000 write/erase cycles. This EEPROM is commonly used in automotive applications due to its AEC-Q100 screening level and temperature grade.

ALSO OPERATES AT 10MHZ

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.26 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

AEC-Q100

2.03 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

6 ms

HARDWARE/SOFTWARE

25LC512-E/SN16KVAO by Microchip Technology

25LC512-E/SN16KVAO

Microchip Technology

25LC512-E/SN16KVAO by Microchip Technology is a 64KX8 EEPROM with 3-STATE output, operating at up to 20 MHz. It features hardware/software write protection and offers endurance of 1M Write/Erase Cycles. Ideal for military-grade applications requiring reliable non-volatile memory storage in small outline packages.

2.5V TO 5.5V @ 10MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

AEC-Q100

1.75 mm

SPI

.00001 Amp

10 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

25LC512T-E/SN16KVAO by Microchip Technology

25LC512T-E/SN16KVAO

Microchip Technology

25LC512T-E/SN16KVAO by Microchip Technology is a serial EEPROM with a memory density of 524288 bits. It operates at a max clock frequency of 20 MHz and has an endurance of 1,000,000 write/erase cycles. This EEPROM is commonly used in automotive applications due to its AEC-Q100 screening level and temperature grade.

2.5V TO 5.5V @ 10MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

AEC-Q100

1.75 mm

SPI

.00001 Amp

10 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

24FC512-I/SN16KVAO by Microchip Technology

24FC512-I/SN16KVAO

Microchip Technology

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; I2C Control Byte: 1010DDDR;

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5

AEC-Q100; TS 16949

1.75 mm

I2C

.000001 Amp

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

24LC08BT-E/OT16KVAO by Microchip Technology

24LC08BT-E/OT16KVAO

Microchip Technology

24LC08BT-E/OT16KVAO by Microchip is a 1KX8 EEPROM with 8192 bit memory density. Operating at 5V, it has a max clock frequency of 0.4 MHz and endurance of 1000000 write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level and TS16949 certification.

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-G5

2.9 mm

8192 bit

EEPROM

8

1

1

5

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

260

5

AEC-Q100; TS 16949

1.45 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

GULL WING

.95 mm

DUAL

30

1.55 mm

5 ms

HARDWARE

24LC32AT-E/OT16KVAO by Microchip Technology

24LC32AT-E/OT16KVAO

Microchip Technology

24LC32AT-E/OT16KVAO by Microchip Tech is a 4KX8 EEPROM with I2C serial bus, operating at 5V. It has a clock frequency of 0.4 MHz and can withstand automotive temperatures. Ideal for applications requiring low-profile, small-outline memory solutions.

.4 MHz

R-PDSO-G5

2.9 mm

32768 bit

EEPROM

8

1

5

4096 words

4K

SYNCHRONOUS

125 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

LSSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

TS 16949

1.45 mm

I2C

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

GULL WING

.95 mm

DUAL

1.55 mm

5 ms

24LC512T-I/ST16KVAO by Microchip Technology

24LC512T-I/ST16KVAO

Microchip Technology

24LC512T-I/ST16KVAO by Microchip is an EEPROM with 64KX8 organization, operating at 5V. It has a clock frequency of 0.4 MHz and supports I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

R-PDSO-G8

4.4 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

TS 16949

1.2 mm

I2C

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

3 mm

5 ms

24LC64-E/SN16KVAO by Microchip Technology

24LC64-E/SN16KVAO

Microchip Technology

24LC64-E/SN16KVAO by Microchip Technology is an EEPROM with 8KX8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers a memory density of 65536 bits. Ideal for automotive applications due to AEC-Q100 screening level and TS16949 certification.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

5

AEC-Q100; TS 16949

1.75 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE