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AT28LV010-20TU-319

Microchip Technology

AT28LV010-20TU-319 by Microchip Technology

AT28LV010-20TU-319 by Microchip Tech is a 128KX8 EEPROM with 131072 words, operating at 3.3V. It offers 100000 Write/Erase Cycles, 200 ns Access Time, and supports Hardware/Software Write Protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact SMALL OUTLINE package.

Median Price

$54.360

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 125 parts In-Stock

1+ parts

$54.360

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125

$54.360

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Verical

USA . 125 parts In-Stock

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$54.360

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125

$54.360

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Mouser Electronics

USA . 30 parts In-Stock

1+ parts

$64.110

100+ parts

$59.290

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30

$64.110

$59.290

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$60.229

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100

$60.229

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Vyrian

USA . 6,423 parts In-Stock

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VNN

France . 1,405 parts In-Stock

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1,405

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Distributors (Availability)

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AZTECH Wire

Italy . 451 parts In-Stock

1+ parts

$18.237

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451

$18.237

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Ampacity Inc.

Singapore . 142 parts In-Stock

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$47.570

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142

$47.570

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Vigor

Singapore . 161 parts In-Stock

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$50.600

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161

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Corohmni

South Africa . 161 parts In-Stock

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$54.105

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$54.105

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$59.024

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$56.663

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100

$59.024

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$56.663

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Continental Prestige Electronics

USA . 5,611 parts In-Stock

1+ parts

$60.229

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$59.024

5,611

$60.229

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$59.024

Semicontronic

India . 138 parts In-Stock

1+ parts

$103.530

100+ parts

$100.942

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$100.424

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138

$103.530

$100.942

$100.424

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Microchip USA

USA . 2,420 parts In-Stock

1+ parts

$128.906

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2,420

$128.906

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Argo Parts USA

USA . 2,946 parts In-Stock

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2,946

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RGB Technical Solutions

Ukraine . 2,291 parts In-Stock

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Overview

Elevate your projects with the AT28LV010-20TU-319 by Microchip Technology, a top-tier manufacturer renowned for quality and reliability. As an EEPROM device, this product offers unparalleled performance in various applications without compromising on value. With 128KX8 organization and 100,000 write/erase cycles, this compact memory solution ensures optimal functionality and endurance for industrial-grade projects. Trust Microchip Technology to deliver cutting-edge technology that exceeds expectations. Unlock the potential of your designs with the AT28LV010-20TU-319 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection to the EEPROM, making it suitable for a variety of industrial applications.

Surface Mount: YES

Being surface-mountable allows for easy integration onto PCBs, saving space and enabling efficient assembly processes.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for more flexibility in communication and data transfer, making it versatile for different system architectures.

Nominal Supply Voltage (Vsup): 3.3V

The 3.3V nominal supply voltage ensures compatibility with standard power sources and low power consumption, making the EEPROM energy-efficient.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, this EEPROM can store large amounts of data efficiently, making it ideal for applications requiring extensive memory capacity.

Technical Specifications

EEPROM AT28LV010-20TU-319 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Access Time:

200 ns

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.56,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

8 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

AT28LV010-20TU-319 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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