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LE2464DXATBG

Onsemi

LE2464DXATBG by Onsemi

LE2464DXATBG by Onsemi is a 8KX8 EEPROM with 65536 bit memory density. It operates at -40 to 85 °C, with Vsup ranging from 1.7V to 3.6V. Suitable for industrial applications, it features I2C serial bus type and very thin profile grid array package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,374 parts In-Stock

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Digiode

USA . 115 parts In-Stock

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AZTECH Wire

Italy . 1,088 parts In-Stock

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$14.910

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Component Stockers USA

USA . 495 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 9,035 parts In-Stock

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SupplyDigital Components

Austria . 5,635 parts In-Stock

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Corphita

USA . 2,289 parts In-Stock

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Problanco Electronics

Mexico . 1,545 parts In-Stock

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TANS Electronics

Latvia . 897 parts In-Stock

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UHIMA Technologies

Türkiye . 875 parts In-Stock

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Kulean Microsystems

USA . 717 parts In-Stock

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Corohmni

South Africa . 452 parts In-Stock

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Microchip USA

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Overview

Discover the LE2464DXATBG by Onsemi, a top-quality EEPROM that offers unparalleled reliability and performance. Onsemi is known for producing cutting-edge semiconductor solutions, and this product is no exception. Ideal for industrial applications, this EEPROM boasts a wide operating temperature range and a compact design. With a memory density of 65536 bits and a maximum clock frequency of 1 MHz, this versatile device ensures fast and efficient data storage. Trust Onsemi to deliver high-quality products that meet your needs. Unlock the potential of your projects with the LE2464DXATBG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, making it suitable for various environments.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Enables efficient and synchronized data transfer, improving overall performance.

Nominal Supply Voltage (Vsup): 2V

Optimal voltage range for stable operation and energy efficiency.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with high temperature requirements.

Organization: 8KX8

Provides a good balance of storage capacity and access speed for various applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Serial Bus Type: I2C

I2C interface allows for easy integration with other devices and communication protocols.

Memory Density: 65536 bit

Offers a decent amount of memory storage for storing data and program codes.

Technical Specifications

EEPROM LE2464DXATBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Length:

1.2 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.33 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

.8 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

LE2464DXATBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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