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CAT24M01WI-G

Onsemi

CAT24M01WI-G by Onsemi

CAT24M01WI-G by Onsemi is an EEPROM with 128KX8 organization, SPI serial bus type, and 1MHz clock frequency. Ideal for industrial applications, it offers 1000000 write/erase cycles endurance and operates at temperatures ranging from -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 49,000 parts In-Stock

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Vyrian

USA . 7,316 parts In-Stock

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Digiode

USA . 1,763 parts In-Stock

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Native Components

USA . 277 parts In-Stock

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$0.137

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$0.132

277

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Northwest PG Solutions

USA . 714 parts In-Stock

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$0.151

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$0.133

714

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$0.133

Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$4.267

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$4.224

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$4.053

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1,000

$4.267

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$4.053

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AZTECH Wire

Italy . 860 parts In-Stock

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$9.320

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Component Stockers USA

USA . 232 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 13,245 parts In-Stock

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Problanco Electronics

Mexico . 5,945 parts In-Stock

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Kulean Microsystems

USA . 5,553 parts In-Stock

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TANS Electronics

Latvia . 5,120 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

India . 2,782 parts In-Stock

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SupplyDigital Components

Austria . 2,578 parts In-Stock

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Corphita

USA . 1,520 parts In-Stock

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Microchip USA

USA . 470 parts In-Stock

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Corohmni

South Africa . 358 parts In-Stock

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UHIMA Technologies

Türkiye . 134 parts In-Stock

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Overview

Discover the CAT24M01WI-G by Onsemi, a top-quality EEPROM that offers unparalleled reliability and performance. Onsemi is a trusted manufacturer known for creating cutting-edge products that exceed industry standards. This EEPROM is perfect for a wide range of applications, providing seamless operation and excellent data retention. With a compact design and advanced features like hardware write protection, this product offers incredible value and benefits to customers looking for a reliable memory solution. Unlock the potential of your project with the CAT24M01WI-G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and making it suitable for compact electronic devices.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage level, ensuring compatibility with most electronic systems.

Write Protection: HARDWARE

Enhances data security by allowing the EEPROM to be protected from unauthorized writing or erasing.

Endurance: 1000000 Write/Erase Cycles

Withstands repeated read/write operations, making it reliable for data storage and retrieval.

Memory Density: 1048576 bit

Offers a high storage capacity, suitable for storing large amounts of data in a compact form factor.

Serial Bus Type: SPI

Supports Serial Peripheral Interface for communication, enabling fast and efficient data transfer between devices.

Technical Specifications

EEPROM CAT24M01WI-G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24M01WI-G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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