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AT28C256-15DM/883-815

Microchip Technology

AT28C256-15DM/883-815 by Microchip Technology

AT28C256-15DM/883-815 by Microchip Technology is a MILITARY-grade EEPROM with 32KX8 organization, 150 ns access time, and 10 ms write cycle time. It operates at 5V with -55 to 125 °C temperature range. Ideal for applications requiring reliable non-volatile memory in harsh environments.

Median Price

$242.690

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 14 parts In-Stock

1+ parts

$242.690

100+ parts

$224.490

1k+ parts

$212.360

10k+ parts

$200.220

14

$242.690

$224.490

$212.360

$200.220

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 28 parts In-Stock

1+ parts

$242.690

100+ parts

$223.530

1k+ parts

$207.170

10k+ parts

-

28

$242.690

$223.530

$207.170

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Vyrian

USA . 10,741 parts In-Stock

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10,741

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VNN

France . 756 parts In-Stock

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756

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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AZTECH Wire

Italy . 543 parts In-Stock

1+ parts

$11.640

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543

$11.640

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Semicontronic

India . 154 parts In-Stock

1+ parts

$13.000

100+ parts

$12.675

1k+ parts

$12.610

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154

$13.000

$12.675

$12.610

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Ampacity Inc.

Singapore . 313 parts In-Stock

1+ parts

$24.000

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313

$24.000

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Corohmni

South Africa . 112 parts In-Stock

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$202.250

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112

$202.250

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Microchip USA

USA . 1,981 parts In-Stock

1+ parts

$247.540

100+ parts

$240.940

1k+ parts

$237.640

10k+ parts

$234.340

1,981

$247.540

$240.940

$237.640

$234.340

QUARKTWIN TECHNOLOGY LTD

USA . 22,960 parts In-Stock

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22,960

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Argo Parts USA

USA . 5,240 parts In-Stock

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West Coast Incorporated

USA . 4,359 parts In-Stock

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4,359

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Continental Prestige Electronics

USA . 1,803 parts In-Stock

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1,803

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Unlock a world of possibilities with the high-quality AT28C256-15DM/883-815 EEPROM by Microchip Technology. Designed for reliability and performance, this military-grade memory device offers a wide range of applications in critical industries. With a robust construction and advanced technology, this EEPROM ensures seamless operation even in extreme conditions. Trust Microchip Technology to deliver top-notch products that meet all your needs and exceed expectations. Elevate your projects with the AT28C256-15DM/883-815 and experience the unparalleled value it brings to your work.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides durability and protection for the EEPROM, making it a reliable choice for long-term use.

Screening Level: MIL-STD-883 Class C

Compliance with MIL-STD-883 Class C ensures high quality and reliability of the EEPROM in harsh environments, making it suitable for military applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation without the need for synchronization, providing flexibility and ease of use.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides compatibility with standard power sources, making integration easier.

Organization: 32KX8

The organization of 32KX8 allows for efficient data storage and retrieval, making the EEPROM suitable for a wide range of applications.

Temperature Grade: MILITARY

The military temperature grade ensures reliable performance over a wide range of temperatures, making this EEPROM ideal for rugged or outdoor environments.

Technology: CMOS

Using CMOS technology enables low power consumption and high speed operation, making the EEPROM efficient and reliable.

Memory IC Type: EEPROM

Being an EEPROM, this memory IC allows for non-volatile data storage and easy reprogramming, making it a versatile choice for various applications.

Technical Specifications

EEPROM AT28C256-15DM/883-815 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Access Time:

150 ns

JESD-30 Code:

R-GDIP-T28

JESD-609 Code:

e0

Length:

37.215 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32KX8

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

5

Screening Level:

MIL-STD-883 Class C

Maximum Seated Height:

5.72 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

AT28C256-15DM/883-815 Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

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Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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