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MR25H128APDF

Everspin Technologies

MR25H128APDF by Everspin Technologies

MR25H128APDF by Everspin Technologies is an EEPROM with 16KX8 organization, operating at 3V. It features a max clock frequency of 40 MHz and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous operation and small form factor with SPI serial bus interface.

Median Price

$6.089

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 36 parts In-Stock

1+ parts

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$6.089

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36

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$6.089

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Distributors (In-Stock)

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Nova Conductors

Japan . 67 parts In-Stock

1+ parts

$6.363

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67

$6.363

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Vyrian

USA . 3,101 parts In-Stock

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3,101

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Distributors (Availability)

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Continental Prestige Electronics

USA . 5,711 parts In-Stock

1+ parts

$6.363

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$6.236

5,711

$6.363

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$6.236

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$6.363

100+ parts

$6.045

1k+ parts

$5.743

10k+ parts

$5.663

100

$6.363

$6.045

$5.743

$5.663

AZTECH Wire

Italy . 432 parts In-Stock

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$19.776

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Argo Parts USA

USA . 1,630 parts In-Stock

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Overview

Unlock the power of reliable data storage with the MR25H128APDF EEPROM by Everspin Technologies. Designed for industrial applications, this high-quality memory device offers a seamless and efficient solution for your data storage needs. With its advanced technology and durable construction, this EEPROM ensures optimal performance in even the harshest environments. Experience the convenience and peace of mind that comes with choosing Everspin Technologies for all your memory storage requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the EEPROM, ensuring a long lifespan.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and simplifying the manufacturing process.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable performance in a wide range of environmental conditions, making it suitable for industrial applications.

Memory Density: 131072 bit

High memory density allows for storing a large amount of data in a compact EEPROM, making it suitable for applications requiring significant data storage.

Serial Bus Type: SPI

Serial Peripheral Interface (SPI) communication offers high-speed data transfer and simple interface with microcontrollers, enhancing overall system performance.

Technical Specifications

EEPROM MR25H128APDF attributes and parameters. Explore more EEPROM devices from Everspin Technologies

Specs

Maximum Clock Frequency (fCLK):

40 MHz

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MR25H128APDF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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