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24AA16T-E/OT16KVAO

Microchip Technology

24AA16T-E/OT16KVAO by Microchip Technology

Microchip Technology's 24AA16T-E/OT16KVAO EEPROM operates at 2.5V with 2Kx8 organization, suitable for automotive applications. Features include I2C control byte, 1.45mm seated height, and endurance of 1M cycles. Ideal for low-profile designs requiring reliable data storage in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,744 parts In-Stock

1+ parts

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7,744

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VNN

France . 2,094 parts In-Stock

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2,094

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,134 parts In-Stock

1+ parts

$2.550

100+ parts

-

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3,134

$2.550

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Corohmni

South Africa . 150 parts In-Stock

1+ parts

$3.416

100+ parts

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150

$3.416

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Ampacity Inc.

Singapore . 507 parts In-Stock

1+ parts

$15.000

100+ parts

-

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507

$15.000

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AZTECH Wire

Italy . 554 parts In-Stock

1+ parts

$18.641

100+ parts

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554

$18.641

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Semicontronic

India . 301 parts In-Stock

1+ parts

$22.000

100+ parts

$21.450

1k+ parts

$21.340

10k+ parts

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301

$22.000

$21.450

$21.340

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Fulton Briggs Corp.

USA . 5,032 parts In-Stock

1+ parts

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5,032

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Continental Prestige Electronics

USA . 4,272 parts In-Stock

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4,272

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Microchip USA

USA . 4,025 parts In-Stock

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4,025

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Argo Parts USA

USA . 3,804 parts In-Stock

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3,804

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Unlock the endless possibilities with the 24AA16T-E/OT16KVAO by Microchip Technology. This high-quality EEPROM device offers unparalleled reliability and endurance, making it ideal for automotive applications. With a compact design and low power consumption, this product provides value and performance that exceeds expectations. Trust Microchip Technology to deliver cutting-edge solutions that meet your needs and elevate your projects to new heights. Experience innovation like never before with the 24AA16T-E/OT16KVAO.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

Screening Level: AEC-Q100

Compliance with AEC-Q100 standards certifies the reliability and quality of the EEPROM for automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and efficient data transfer within the EEPROM.

Nominal Supply Voltage (V): 2.5

Stable supply voltage of 2.5V ensures consistent performance of the EEPROM.

No. of Terminals: 5

Minimal number of terminals simplifies the connections required for the EEPROM, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Compact package style with low profile and shrink pitch saves space on the PCB and allows for efficient utilization of board space.

Maximum Operating Temperature: 125 °C

Wide operating temperature range of -40°C to 125°C enables the EEPROM to function reliably in extreme environmental conditions.

Organization: 2KX8

Organized as 2K x 8 bits, providing a total memory capacity of 2048 words for storing data efficiently.

Minimum Operating Temperature: -40 °C

Capable of functioning in cold temperatures down to -40°C, making it suitable for a variety of operating environments.

I2C Control Byte: 1010MMMR

I2C control byte for communication protocol ensures compatibility with I2C bus systems for seamless data transfer.

Terminal Position: DUAL

Dual terminal position allows for secure and stable connection to the PCB, reducing the risk of disconnection.

Write Protection: HARDWARE

Hardware write protection feature prevents accidental or unauthorized data modification, enhancing data security.

Maximum Seated Height: 1.45 mm

Low seated height of 1.45mm facilitates compact device design and integration in space-constrained applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

High clock frequency of 0.4MHz enables fast data transfer and operation speed of the EEPROM.

Width: 1.55 mm

Slim width of 1.55mm allows for efficient use of space on the PCB and supports compact product designs.

Minimum Supply Voltage (Vsup): 1.7 V

Operational at a low minimum supply voltage of 1.7V, making it energy-efficient and suitable for low-power applications.

Length: 2.9 mm

Compact length of 2.9mm facilitates easy integration and placement of the EEPROM in electronic devices.

Programming Voltage (V): 2.5

Stable programming voltage of 2.5V ensures accurate and reliable data programming in the EEPROM.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating ensures the EEPROM can withstand harsh automotive conditions and maintain reliable performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the EEPROM.

Parallel or Serial: SERIAL

Serial interface allows for efficient data transfer and communication with other components, simplifying system integration.

Terminal Form: GULL WING

Gull wing terminal form provides secure solder connections to the PCB, ensuring reliable electrical contact.

Maximum Supply Current: 3 mA

Low maximum supply current of 3mA minimizes power consumption, making the EEPROM suitable for energy-efficient applications.

No. of Words: 2048 words

Large memory capacity of 2048 words enables storage of a significant amount of data in the EEPROM.

Memory Width: 8

Memory width of 8 bits allows for storing data in 8-bit increments, facilitating efficient data management and access.

Minimum Data Retention Time: 200

High minimum data retention time of 200 years ensures long-term data integrity and reliability in the EEPROM.

Terminal Pitch: 0.95 mm

Narrow terminal pitch of 0.95mm enables compact layout and space-saving design in the PCB assembly.

No. of Words Code: 2K

Memory organization as 2K words simplifies addressing and management of data stored in the EEPROM.

Maximum Supply Voltage (Vsup): 5.5 V

Wide maximum supply voltage range of 5.5V ensures compatibility with various power sources and systems.

Endurance: 1000000 Write/Erase Cycles

High endurance of 1,000,000 write/erase cycles ensures reliable and long-lasting performance of the EEPROM.

Serial Bus Type: I2C

I2C serial bus interface allows for easy integration and communication with other devices, enhancing system flexibility.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time of 5ms ensures quick data programming and efficient operation of the EEPROM.

Memory Density: 16384 bit

High memory density of 16,384 bits allows for storing a large volume of data in the EEPROM.

Memory IC Type: EEPROM

Specifically designed as an EEPROM, offering non-volatile memory storage for data retention and program stability.

Maximum Standby Current: 0.000005 Amp

Ultra-low maximum standby current of 0.000005A preserves energy and extends battery life in low-power applications.

Technical Specifications

EEPROM 24AA16T-E/OT16KVAO attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

1.7V TO 2.5V @ 0.1MHz

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010MMMR

JESD-30 Code:

R-PDSO-G5

Length:

2.9 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

5

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Programming Voltage (V):

2.5

Screening Level:

AEC-Q100

Maximum Seated Height:

1.45 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.55 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA16T-E/OT16KVAO Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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