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24LC1025T-E/SN16KVAO

Microchip Technology

24LC1025T-E/SN16KVAO by Microchip Technology

24LC1025T-E/SN16KVAO by Microchip is an EEPROM with 128KX8 organization, operating at 5V. It features I2C control byte 1010MDDR and endurance of 1M cycles. Ideal for automotive applications due to AEC-Q100 screening, it offers a max clock frequency of 0.4 MHz and operates in the temperature range of -40 to 125 °C.

Median Price

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Lifecycle Status

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3

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1k+

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VNN

France . 4,529 parts In-Stock

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4,529

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Vyrian

USA . 2,482 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Aztec Data Supply Inc.

USA . 4,042 parts In-Stock

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$4.170

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4,042

$4.170

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Corohmni

South Africa . 1,117 parts In-Stock

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$5.228

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$5.228

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AZTECH Wire

Italy . 714 parts In-Stock

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$5.910

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714

$5.910

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Semicontronic

India . 1,495 parts In-Stock

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$13.000

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$12.675

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$12.610

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1,495

$13.000

$12.675

$12.610

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Ampacity Inc.

Singapore . 863 parts In-Stock

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$20.000

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863

$20.000

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Fulton Briggs Corp.

USA . 7,223 parts In-Stock

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Argo Parts USA

USA . 4,231 parts In-Stock

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Continental Prestige Electronics

USA . 2,887 parts In-Stock

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Microchip USA

USA . 1,529 parts In-Stock

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1,529

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 24LC1025T-E/SN16KVAO by Microchip Technology. This high-quality EEPROM offers unparalleled endurance and memory density, making it ideal for automotive applications where durability is key. With a maximum operating temperature of 125°C and AEC-Q100 screening level, this product ensures top-notch performance in challenging environments. Trust in Microchip Technology's expertise to deliver cutting-edge technology that meets your needs. Choose the 24LC1025T-E/SN16KVAO for superior quality and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this EEPROM lightweight and durable, ideal for various applications.

Surface Mount: YES

With surface mount capability, this EEPROM can be easily integrated into PCBs, saving space and simplifying the assembly process.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that this EEPROM meets strict automotive quality standards, making it reliable for automotive applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and placement on a PCB, maximizing space efficiency.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures fast and efficient data transfer, making this EEPROM suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage provides stable power to the EEPROM, ensuring reliable performance in various operating conditions.

No. of Terminals: 8

With 8 terminals, this EEPROM offers easy connectivity and integration into circuit designs, making it versatile for a range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making this EEPROM ideal for compact designs and applications with limited space.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this EEPROM can withstand extreme conditions, making it suitable for industrial applications.

Organization: 128KX8

The 128KX8 organization provides a large memory capacity, allowing for storing a significant amount of data in this EEPROM.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics enable easy interfacing with other devices, enhancing versatility and compatibility in various systems.

Minimum Operating Temperature: -40 °C

The EEPROM's low minimum operating temperature of -40°C ensures reliable performance in cold environments, making it suitable for outdoor and industrial applications.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides corrosion resistance and solderability, enhancing the longevity and reliability of this EEPROM.

I2C Control Byte: 1010MDDR

The specific I2C control byte makes it easy to communicate with and control this EEPROM in I2C bus systems, simplifying integration and operation.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and design, allowing for easy installation and connection of the EEPROM.

Write Protection: HARDWARE

The hardware write protection feature ensures data security and integrity, making this EEPROM suitable for applications where data protection is crucial.

Maximum Seated Height: 1.75 mm

The low maximum seated height allows for compact and slim device designs when using this EEPROM, ideal for space-constrained applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

With a high maximum clock frequency of 0.4 MHz, this EEPROM can handle fast data transfer rates, suitable for high-performance applications.

Width: 3.9 mm

The compact width of 3.9 mm allows for space-saving integration of this EEPROM into various electronic devices and systems.

Minimum Supply Voltage (Vsup): 2.5 V

The low minimum supply voltage requirement of 2.5V ensures energy efficiency and flexibility in power supply options for this EEPROM.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and assembly of this EEPROM, maintaining its functionality.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable soldering of this EEPROM onto PCBs, ensuring secure connections and stable performance.

Length: 4.9 mm

The compact length of 4.9 mm makes this EEPROM suitable for small devices and applications where space is limited.

Programming Voltage (V): 5

The 5V programming voltage allows for easy and efficient programming of this EEPROM, simplifying the data writing process.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature specification indicates that this EEPROM can operate reliably in a wide range of temperature conditions, suitable for automotive applications.

Technology: CMOS

The CMOS technology used in this EEPROM offers low power consumption and high noise immunity, making it energy-efficient and reliable in various environments.

Parallel or Serial: SERIAL

The serial data transfer method provides efficient communication with this EEPROM in sequential order, suitable for applications requiring serial data access.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and secure mounting of this EEPROM onto PCBs, ensuring stable connections and reliable performance.

Maximum Supply Current: 5 mA

The low maximum supply current requirement of 5 mA ensures energy efficiency and minimal power consumption when using this EEPROM.

No. of Words: 131072 words

With 131,072 words capacity, this EEPROM can store a large volume of data, suitable for applications requiring extensive memory storage.

Memory Width: 8

The 8-bit memory width offers compatibility with a wide range of data formats, allowing for versatile data storage and retrieval in this EEPROM.

Minimum Data Retention Time: 200

The minimum data retention time of 200 years ensures long-term data integrity and reliability, making this EEPROM suitable for critical data storage applications.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch provides ample space for soldering and connectivity, facilitating easy installation and integration of this EEPROM.

No. of Words Code: 128K

The 128K words code signifies the large memory capacity of this EEPROM, suitable for applications requiring extensive data storage.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V allows for flexible power supply options and ensures safe operation within the specified voltage range for this EEPROM.

Endurance: 1000000 Write/Erase Cycles

With endurance for 1,000,000 write/erase cycles, this EEPROM offers reliable and long-lasting data read/write capabilities, ideal for frequent data updates and storage.

Serial Bus Type: I2C

The I2C serial bus type offers a simple and efficient communication interface for connecting and controlling this EEPROM in various electronic systems.

Maximum Write Cycle Time (tWC): 5 ms

The fast maximum write cycle time of 5 ms allows for quick data updates and programming of this EEPROM, suitable for applications requiring rapid data processing.

Memory Density: 1048576 bit

With a memory density of 1,048,576 bits, this EEPROM provides ample storage capacity for a wide range of data types and applications.

Memory IC Type: EEPROM

The EEPROM memory IC type offers non-volatile data storage capabilities, allowing for data retention even when power is removed, making it ideal for storing critical information.

Maximum Standby Current: 0.000005 Amp

The ultra-low maximum standby current of 0.000005 Amp ensures minimal power consumption when the EEPROM is in standby mode, maximizing energy efficiency.

Technical Specifications

EEPROM 24LC1025T-E/SN16KVAO attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010MDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

5

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC1025T-E/SN16KVAO Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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