Loading...

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
24VL024H/SN by Microchip Technology

24VL024H/SN

Microchip Technology

24VL024H/SN by Microchip Tech is an EEPROM with 256x8 organization, 2048-bit memory density, and 1.8-3.6V supply voltage range. Ideal for applications requiring low power consumption, such as IoT devices and wearables due to its small outline package and I2C serial bus interface.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-20 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24VL024HT/MNY by Microchip Technology

24VL024HT/MNY

Microchip Technology

24VL024HT/MNY by Microchip Technology is an EEPROM with 256x8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and offers 1000000 write/erase cycles endurance. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact designs.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-20 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

2.5

Not Qualified

TS 16949

.8 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

M34F04-WMN6TP by STMicroelectronics

M34F04-WMN6TP

STMicroelectronics

M34F04-WMN6TP from STMicroelectronics is a 512x8 EEPROM with a synchronous operating mode, ideal for industrial applications. It operates at 2.7-5.5V and supports I2C communication, ensuring efficient data storage and retrieval. With a max temp of 85 °C and endurance of 1M cycles, it's reliable for demanding environments.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e4

4.9 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.7/5

Not Qualified

1.75 mm

I2C

.0000005 Amp

EEPROMs

1 mA

5.5 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M95128-RDW6TG by STMicroelectronics

M95128-RDW6TG

STMicroelectronics

M95128-RDW6TG by STMicroelectronics is an EEPROM with 16KX8 organization, SPI serial bus type, and 100000 write/erase cycles endurance. It operates in industrial temperature grade range from -40 to 85 °C and has a max clock frequency of 2 MHz. Ideal for applications requiring reliable non-volatile memory storage in compact electronic devices.

2 MHz

40

100000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

VSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

.65 mm

SPI

.0000005 Amp

EEPROMs

1 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE/SOFTWARE

XC17128EPDG8C by Xilinx

XC17128EPDG8C

Xilinx

Xilinx XC17128EPDG8C is a 128Kx1 EEPROM with 15MHz clock frequency, operating at 5V. It features synchronous operation, 3-STATE output, and serial interface. Ideal for configuration memory applications in commercial-grade devices due to its compact size and low standby current of 0.00005A.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256EPCG20C by Xilinx

XC17256EPCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Package Equivalence Code: LDCC20,.4SQ;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

262144 bit

CONFIGURATION MEMORY

1

3

1

20

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

5

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17256EPDG8C by Xilinx

XC17256EPDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8C by Xilinx

XC17S200APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 1335840X1;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8I by Xilinx

XC17S200APDG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APDG8C by Xilinx

XC17S50APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 250;

COMMON

R-PDIP-T8

e3

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC18V01PCG20C by Xilinx

XC18V01PCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): 30;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e3

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V01SOG20C by Xilinx

XC18V01SOG20C

Xilinx

XC18V01SOG20C by Xilinx is a 128Kx8 EEPROM with NOR type technology. It operates at 3.3V, has a clock frequency of 33MHz, and offers 20000 write/erase cycles. Ideal for industrial applications requiring configuration memory with a parallel/serial interface and small outline package style.

15 ns

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

12.827 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

2.6416 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5184 mm

XC18V02PCG44C by Xilinx

XC18V02PCG44C

Xilinx

XC18V02PCG44C by Xilinx is a 256Kx8 NOR type EEPROM with 20MHz clock frequency, operating at -40 to 85°C. It has 20000 write/erase cycles, suitable for industrial applications requiring configuration memory with 3.3V supply and parallel/serial interface.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQCC-J44

e3

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V04PCG44C by Xilinx

XC18V04PCG44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; JESD-30 Code: S-PQCC-J44;

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQCC-J44

e3

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V512PCG20C by Xilinx

XC18V512PCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): 30;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e3

8.9662 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V512SOG20C by Xilinx

XC18V512SOG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Length: 12.827 mm;

15 ns

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

12.827 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

2.6416 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5184 mm

XC1701LPDG8I by Xilinx

XC1701LPDG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701LPCG20I by Xilinx

XC1701LPCG20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC1736EPDG8C by Xilinx

XC1736EPDG8C

Xilinx

XC1736EPDG8C by Xilinx is a 36288-bit EEPROM with 10 MHz clock frequency, operating at 5V. It features synchronous operation, 3-STATE output, and serial interface. Ideal for configuration memory applications in commercial-grade devices due to its compact size and low standby current of 0.00005 Amp.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

36288 bit

CONFIGURATION MEMORY

1

1

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1736ESOG8C by Xilinx

XC1736ESOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

36288 bit

CONFIGURATION MEMORY

1

3

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

250

5

Not Qualified

1.7272 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1765EPDG8C by Xilinx

XC1765EPDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Memory Density: 65536 bit;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1765ELSOG8C by Xilinx

XC1765ELSOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

2.5 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

250

3.3

Not Qualified

1.7272 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1765ESOG8C by Xilinx

XC1765ESOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

250

5

Not Qualified

1.7272 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1701L-PDG8C by Xilinx

XC1701L-PDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP8,.3;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701L-PCG20C by Xilinx

XC1701L-PCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Additional Features: USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

M24C32-RMB6TG by STMicroelectronics

M24C32-RMB6TG

STMicroelectronics

M24C32-RMB6TG by STMicroelectronics is a 32Kb EEPROM with I2C interface, ideal for automotive applications due to its AEC-Q100 screening. It operates at 1.8V-5.5V and supports up to 1M write/erase cycles, ensuring reliability in harsh environments. Its compact size (3mm x 2mm) and low power consumption make it suitable for space-constrained designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

32768 bit

EEPROM

8

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

AEC-Q100

.6 mm

I2C

.0000002 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M95512-RDW6P by STMicroelectronics

M95512-RDW6P

STMicroelectronics

M95512-RDW6P by STMicroelectronics is a 64KX8 EEPROM with SPI serial bus, 5 MHz clock frequency, and 1000000 write/erase cycles. It operates in industrial temperature range (-40 to 85 °C) and has a small outline package suitable for various applications requiring non-volatile memory storage.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.2 mm

SPI

.000005 Amp

EEPROMs

8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE/SOFTWARE

24FC512-I/ST by Microchip Technology

24FC512-I/ST

Microchip Technology

The Microchip Technology 24FC512-I/ST is an EEPROM with 64KX8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 1 MHz and can endure up to 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA01T-I/MC by Microchip Technology

24AA01T-I/MC

Microchip Technology

24AA01T-I/MC by Microchip Technology is an EEPROM with 128x8 organization, I2C serial bus type, and 1.7V min supply voltage. It operates in industrial temperature grade (-40 to 85 °C) and offers 1000000 write/erase cycles endurance. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-N8

e3

3 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

M24512-RDW6P by STMicroelectronics

M24512-RDW6P

STMicroelectronics

M24512-RDW6P by STMicroelectronics is a 64Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 4M write/erase cycles, and functions in industrial temperatures from -40 °C to 85 °C. Ideal for data storage in compact electronic devices.

.4 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24AA024T-I/MC by Microchip Technology

24AA024T-I/MC

Microchip Technology

24AA024T-I/MC by Microchip Technology is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and offers 1000000 write/erase cycles. Ideal for applications requiring low power consumption and reliable data storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

24AA1025-I/P by Microchip Technology

24AA1025-I/P

Microchip Technology

24AA1025-I/P by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring I2C control byte 1010MDDR. It is used in industrial applications for storing data with a memory density of 1048576 bit and endurance of 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010MDDR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

AEC-Q100

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24C02C-I/MS by Microchip Technology

24C02C-I/MS

Microchip Technology

24C02C-I/MS by Microchip Technology is a serial EEPROM with a memory density of 2048 bit. It operates at a max clock frequency of 0.4 MHz and has an endurance of 1,000,000 write/erase cycles. This EEPROM is commonly used in industrial applications for data storage and retrieval.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

5

5

Not Qualified

TS 16949

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

1 ms

HARDWARE

24C02CT-I/MC by Microchip Technology

24C02CT-I/MC

Microchip Technology

24C02CT-I/MC by Microchip Technology is a 256x8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and has a memory density of 2048 bits. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

5

5

Not Qualified

TS 16949

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

1 ms

HARDWARE

24FC1025-I/P by Microchip Technology

24FC1025-I/P

Microchip Technology

24FC1025-I/P by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring a max clock frequency of 1 MHz. It is commonly used in industrial applications requiring reliable non-volatile memory storage with a high endurance of 1000000 write/erase cycles.

1 MHz

200

1000000 Write/Erase Cycles

1010MDDR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

AEC-Q100

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

25AA256-I/SM by Microchip Technology

25AA256-I/SM

Microchip Technology

25AA256-I/SM by Microchip Technology is a SPI EEPROM with 32KX8 organization, operating at 2.5V, and offering 262144-bit memory density. It features hardware/software write protection, AEC-Q100 screening level for industrial applications, and supports a max clock frequency of 10 MHz. Ideal for automotive electronics, IoT devices, and industrial control systems.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.245 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

2.03 mm

SPI

.000001 Amp

EEPROMs

6 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE/SOFTWARE

25AA256X-I/ST by Microchip Technology

25AA256X-I/ST

Microchip Technology

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Write Cycle Time (tWC): 5 ms;

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.2 mm

SPI

.000001 Amp

EEPROMs

6 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE/SOFTWARE

25AA256XT-I/ST by Microchip Technology

25AA256XT-I/ST

Microchip Technology

25AA256XT-I/ST by Microchip is a 32Kx8 EEPROM with SPI serial bus, 262144-bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85°C, it offers hardware/software write protection and synchronous operation. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.2 mm

SPI

.000001 Amp

EEPROMs

6 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE/SOFTWARE

M95020-DWDW4TP/K by STMicroelectronics

M95020-DWDW4TP/K

STMicroelectronics

M95020-DWDW4TP/K by STMicroelectronics is a serial EEPROM with 256x8 organization, ideal for automotive applications. It operates in a temp range of -40 °C to 145 °C and supports up to 10 MHz clock frequency. This compact device features an AEC-Q100 screening level for reliability.

10 MHz

R-PDSO-G8

4.4 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

145 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

AEC-Q100

1.2 mm

SPI

5.5 V

2.5 V

YES

CMOS

AUTOMOTIVE

GULL WING

.65 mm

DUAL

3 mm

4 ms

24AA32AF-I/SN by Microchip Technology

24AA32AF-I/SN

Microchip Technology

24AA32AF-I/SN by Microchip Technology is an EEPROM with 4Kx8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

32768 bit

EEPROM

8

1

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24LC32AF-I/MS by Microchip Technology

24LC32AF-I/MS

Microchip Technology

24LC32AF-I/MS by Microchip Tech is a 4KX8 EEPROM with I2C control byte 1010DDDR. Operating at 5V, it has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in small outline packages.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

32768 bit

EEPROM

8

1

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24LC32AFT-E/OT by Microchip Technology

24LC32AFT-E/OT

Microchip Technology

24LC32AFT-E/OT by Microchip Technology is a 4KX8 EEPROM with I2C control byte, operating at 5V. It offers 1000000 write/erase cycles, -40 to 125 °C temperature range, and 0.4 MHz clock frequency. Ideal for automotive applications due to TS16949 screening level and small outline package style.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G6

e3

2.9 mm

32768 bit

EEPROM

8

1

1

1

6

4096 words

4K

SYNCHRONOUS

125 Cel

-40 Cel

4KX8

OPEN-DRAIN

PLASTIC/EPOXY

LSSOP

TSOP6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.45 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

.95 mm

DUAL

40

1.55 mm

5 ms

HARDWARE

24LC64F-I/ST by Microchip Technology

24LC64F-I/ST

Microchip Technology

24LC64F-I/ST by Microchip Technology is an EEPROM with 8KX8 organization, 65536 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates on a supply voltage range of 2.5V to 5.5V and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

25AA080DT-I/SN by Microchip Technology

25AA080DT-I/SN

Microchip Technology

25AA080DT-I/SN by Microchip Technology is an EEPROM with 1KX8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at -40 to 85 °C, has a memory density of 8192 bit, and is ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.75 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

25AA160C-I/ST by Microchip Technology

25AA160C-I/ST

Microchip Technology

25AA160C-I/ST by Microchip Technology is a SPI EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles endurance. It operates at -40 to 85 °C, suitable for industrial applications requiring reliable non-volatile memory storage. With a compact form factor of 4.4mm x 3mm and low standby current of 0.000005 Amp, it's ideal for space-constrained designs in automotive electronics.

OPERATES WITH 1.8VMIN @ 3MHZ

5 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.2 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE/SOFTWARE

25AA160D-I/MS by Microchip Technology

25AA160D-I/MS

Microchip Technology

25AA160D-I/MS by Microchip Tech is a 1KX8 EEPROM with SPI serial bus, 8192-bit memory density, and 5 MHz clock frequency. Ideal for industrial applications, it offers 1000000 write/erase cycles and operates b/w -40 to 85 °C.

OPERATES WITH 1.8VMIN @ 3MHZ

5 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.1 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE/SOFTWARE

25LC080DT-I/SN by Microchip Technology

25LC080DT-I/SN

Microchip Technology

25LC080DT-I/SN by Microchip Technology is a serial EEPROM with 1KX8 organization, SPI interface, and 10 MHz clock frequency. It operates at -40 to 85 °C, has 1000000 write/erase cycles endurance, and is ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.75 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

25LC160C-I/ST by Microchip Technology

25LC160C-I/ST

Microchip Technology

25LC160C-I/ST by Microchip Technology is a SPI EEPROM with 2Kx8 organization, 16384-bit memory density, and 1M write/erase cycles endurance. Operating at -40 to 85°C, it's ideal for industrial applications requiring reliable non-volatile data storage in a compact 0.65mm pitch package.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.4 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.2 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE