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24AA01T-I/MC

Microchip Technology

24AA01T-I/MC by Microchip Technology

24AA01T-I/MC by Microchip Technology is an EEPROM with 128x8 organization, I2C serial bus type, and 1.7V min supply voltage. It operates in industrial temperature grade (-40 to 85 °C) and offers 1000000 write/erase cycles endurance. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,387 parts In-Stock

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3,387

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VNN

France . 934 parts In-Stock

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934

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Nova Conductors

Japan . 75 parts In-Stock

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75

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Distributors (Availability)

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$0.490

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164

$0.490

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Semicontronic

India . 1,548 parts In-Stock

1+ parts

$4.000

100+ parts

$3.900

1k+ parts

$3.880

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1,548

$4.000

$3.900

$3.880

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AZTECH Wire

Italy . 660 parts In-Stock

1+ parts

$19.050

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660

$19.050

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Ampacity Inc.

Singapore . 434 parts In-Stock

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$23.000

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434

$23.000

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RGB Technical Solutions

Ukraine . 3,464 parts In-Stock

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Argo Parts USA

USA . 3,342 parts In-Stock

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Continental Prestige Electronics

USA . 2,330 parts In-Stock

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2,330

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Netroflash

USA . 500 parts In-Stock

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500

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Overview

Enhance your electronic projects with the 24AA01T-I/MC EEPROM from Microchip Technology. Known for their high-quality components, Microchip Technology delivers reliable products that meet the demands of various industries. This EEPROM is perfect for applications requiring data storage and retrieval, offering a wide range of benefits such as fast operation, low power consumption, and secure write protection. Trust in Microchip Technology to provide you with top-notch solutions for your design needs. Elevate your projects with the 24AA01T-I/MC EEPROM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it suitable for various environments.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort in the assembly process.

Screening Level: AEC-Q100

Compliance with automotive industry standards ensures high quality and reliability for automotive applications.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal supply voltage for efficient operation and performance of the EEPROM.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial and automotive applications where temperature fluctuations occur.

Organization: 128X8

Offers a good balance between capacity and performance, suitable for various data storage requirements.

Write Protection: HARDWARE

Enhanced security feature to prevent unauthorized writes or erasures, ensuring data integrity and protection.

Endurance: 1000000 Write/Erase Cycles

High number of write/erase cycles ensures long-term reliability and durability of the EEPROM for frequent data updates.

Technical Specifications

EEPROM 24AA01T-I/MC attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

1.7V TO 2.5V @ 0.1MHz

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XXXR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

3 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA01T-I/MC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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