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AT25512N-SH-B-899

Microchip Technology

AT25512N-SH-B-899 by Microchip Technology

AT25512N-SH-B-899 by Microchip Technology is a 64KX8 EEPROM with 20 MHz clock frequency, SPI serial bus type, and 1000000 write/erase cycles. It operates in industrial temperature range (-40 to 85 °C) and has a small outline package for applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 1,088 parts In-Stock

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Vyrian

USA . 312 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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$3.489

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Aztec Data Supply Inc.

USA . 2,128 parts In-Stock

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$3.998

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$5.424

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$5.153

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Semicontronic

India . 724 parts In-Stock

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$14.000

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$13.650

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$13.580

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724

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AZTECH Wire

Italy . 312 parts In-Stock

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$18.840

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Ampacity Inc.

Singapore . 1,295 parts In-Stock

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$29.000

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RGB Technical Solutions

Ukraine . 7,990 parts In-Stock

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Argo Parts USA

USA . 3,943 parts In-Stock

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Continental Prestige Electronics

USA . 2,088 parts In-Stock

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Bastille Electronics

Australia . 400 parts In-Stock

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Overview

Enhance your electronic projects with the AT25512N-SH-B-899 by Microchip Technology. This high-quality EEPROM offers exceptional reliability and performance, making it a top choice for various applications. With its advanced features and durable construction, this product provides value and benefits that cater to the needs of customers seeking dependable memory solutions. Upgrade your devices with the AT25512N-SH-B-899 and experience unparalleled efficiency and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the EEPROM, making it reliable for long-term use.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and timely data transfer, increasing the efficiency of the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with common power sources and devices.

Write Protection: HARDWARE/SOFTWARE

The option for both hardware and software write protection adds an extra layer of security to the EEPROM to prevent accidental data modification.

Maximum Clock Frequency (fCLK): 20 MHz

High clock frequency enables fast data transfer and processing speed, improving the overall performance of the EEPROM.

Endurance: 1000000 Write/Erase Cycles

High endurance level means the EEPROM can withstand frequent read and write operations, ensuring a longer lifespan for the product.

Serial Bus Type: SPI

SPI (Serial Peripheral Interface) allows for easy integration with other devices, making the EEPROM versatile and compatible with a wide range of systems.

Technical Specifications

EEPROM AT25512N-SH-B-899 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

ALSO OPERATES AT 2.7V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

5

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

AT25512N-SH-B-899 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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