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25AA160C-I/ST

Microchip Technology

25AA160C-I/ST by Microchip Technology

25AA160C-I/ST by Microchip Technology is a SPI EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles endurance. It operates at -40 to 85 °C, suitable for industrial applications requiring reliable non-volatile memory storage. With a compact form factor of 4.4mm x 3mm and low standby current of 0.000005 Amp, it's ideal for space-constrained designs in automotive electronics.

Median Price

$0.740

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 513 parts In-Stock

1+ parts

$0.740

100+ parts

-

1k+ parts

-

10k+ parts

-

513

$0.740

-

-

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Mouser Electronics

USA . 500 parts In-Stock

1+ parts

$0.770

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.770

-

-

-

Verical

USA . 161 parts In-Stock

1+ parts

-

100+ parts

$0.688

1k+ parts

-

10k+ parts

-

161

-

$0.688

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.692

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.692

-

-

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Vyrian

USA . 6,404 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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6,404

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VNN

France . 1,668 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,668

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,214 parts In-Stock

1+ parts

$0.610

100+ parts

-

1k+ parts

-

10k+ parts

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2,214

$0.610

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-

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Lixinc

USA . 10,745 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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10,745

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-

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Fulton Briggs Corp.

USA . 7,639 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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7,639

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-

-

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.678

1k+ parts

$0.657

10k+ parts

$0.644

500

-

$0.678

$0.657

$0.644

Overview

Enhance your electronic projects with the reliable 25AA160C-I/ST EEPROM by Microchip Technology. Designed for industrial-grade applications, this EEPROM offers a durable construction and high-performance features to ensure optimal functionality. With a memory density of 8192 bits and an endurance of 1,000,000 write/erase cycles, this EEPROM provides long-lasting reliability. Perfect for embedded systems, automotive electronics, and consumer devices, the 25AA160C-I/ST guarantees efficient data storage and quick access. Trust in Microchip Technology's expertise and elevate your projects with this top-quality EEPROM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this EEPROM lightweight and durable, ideal for various applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures high quality and reliability, making this EEPROM suitable for automotive applications.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard PCB layouts, making it easy to integrate into existing designs.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient and synchronized data transfer, enhancing overall performance.

Nominal Supply Voltage / Vsup: 2.5V

The 2.5V supply voltage is optimal for energy-efficient operation and compatibility with various systems.

Power Supplies: 2/5V

The multiple power supply options provide flexibility in powering the EEPROM, allowing for compatibility with different voltage requirements.

No. of Terminals: 8

With 8 terminals, this EEPROM offers a simple interface for connecting to external devices, facilitating easy integration into systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style saves space on the PCB, making it ideal for compact designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance in a wide range of environments.

Organization: 1KX8

The 1KX8 organization provides ample memory capacity and data storage capabilities for various applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for high-speed data transmission and efficient communication with external devices.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable performance even in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish with annealed terminals provides excellent corrosion resistance and robust connectivity for long-lasting usage.

Terminal Position: DUAL

The dual terminal position enhances stability and reliability in operation, preventing signal loss or interruptions.

Write Protection: HARDWARE/SOFTWARE

The hardware/software write protection feature ensures data security and prevents unauthorized access or modifications.

Maximum Seated Height: 1.2 mm

The low maximum seated height allows for compact and slim designs, ideal for space-constrained applications.

Maximum Clock Frequency (fCLK): 5 MHz

The high maximum clock frequency of 5 MHz enables fast data transfer rates and efficient performance.

Width: 3 mm

The compact width of 3 mm ensures compatibility with standard PCB layouts and allows for flexible mounting options.

Minimum Supply Voltage (Vsup): 1.8V

The low minimum supply voltage of 1.8V enables energy-efficient operation and compatibility with low-power systems.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures reliable soldering and assembly of the EEPROM.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures robust solder joints and secure connections during manufacturing processes.

Length: 4.4 mm

The moderate length of 4.4 mm allows for easy integration into PCB layouts and provides flexibility in design configurations.

Programming Voltage (V): 2.5V

The 2.5V programming voltage ensures efficient and reliable programming of the EEPROM, enhancing data storage capabilities.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh environments and industrial applications.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and reliable performance, making this EEPROM a cost-effective choice.

Parallel or Serial: SERIAL

The serial interface allows for simple and efficient communication with external devices, enhancing usability and versatility.

Terminal Form: GULL WING

The gull-wing terminal form provides secure connections and easy soldering, ensuring reliable operation and durability.

Maximum Supply Current: 5 mA

The low maximum supply current of 5 mA ensures energy-efficient operation and compatibility with various power sources.

No. of Words: 1024 words

The 1024 words capacity provides ample data storage for various applications, allowing for efficient data management and retrieval.

Memory Width: 8

The 8-bit memory width allows for efficient data transfer and storage capabilities, enhancing overall performance and usability.

Minimum Data Retention Time: 200

The minimum data retention time of 200 years ensures long-term data integrity and reliability for critical applications.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65 mm enables high-density mounting and compatibility with compact PCB layouts, saving space and reducing interference.

No. of Words Code: 1K

The 1K word code provides a simple and efficient way to identify the capacity and data storage capabilities of the EEPROM.

Maximum Supply Voltage (Vsup): 5.5V

The high maximum supply voltage of 5.5V allows for compatibility with a wide range of power sources and systems, enhancing versatility and usability.

Endurance: 1000000 Write/Erase Cycles

The high endurance of 1,000,000 write/erase cycles ensures long-lasting performance and reliability for frequent data updates and modifications.

Serial Bus Type: SPI

The SPI serial bus interface allows for fast and efficient communication with external devices, enhancing data transfer rates and overall system performance.

Maximum Write Cycle Time (tWC): 5 ms

The fast maximum write cycle time of 5 ms ensures quick and efficient data programming, enhancing productivity and performance.

Memory Density: 8192 bit

The 8192 bit memory density provides ample data storage capacity for various applications, allowing for efficient data management and retrieval.

Memory IC Type: EEPROM

The EEPROM memory IC type offers non-volatile data storage capabilities, ensuring data retention even when power is removed, making it ideal for critical applications.

Maximum Standby Current: 0.000005 Amp

The low maximum standby current of 0.000005 Amp ensures energy-efficient operation and minimal power consumption during standby mode, enhancing overall efficiency and performance.

Technical Specifications

EEPROM 25AA160C-I/ST attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

OPERATES WITH 1.8VMIN @ 3MHZ

Maximum Clock Frequency (fCLK):

5 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

25AA160C-I/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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