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M24512-RDW6P

STMicroelectronics

M24512-RDW6P by STMicroelectronics

M24512-RDW6P by STMicroelectronics is a 64Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 4M write/erase cycles, and functions in industrial temperatures from -40 °C to 85 °C. Ideal for data storage in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,936 parts In-Stock

1+ parts

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4,936

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Digiode

USA . 2,744 parts In-Stock

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2,744

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Anansix

USA . 2,726 parts In-Stock

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2,726

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,202 parts In-Stock

1+ parts

$3.108

100+ parts

-

1k+ parts

$2.797

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2,202

$3.108

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$2.797

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MKK Technologies

India . 2,053 parts In-Stock

1+ parts

$5.844

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2,053

$5.844

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DigiPath Technology Company

USA . 2,053 parts In-Stock

1+ parts

$5.844

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2,053

$5.844

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AZTECH Wire

Italy . 181 parts In-Stock

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$14.850

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181

$14.850

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Microchip USA

USA . 143 parts In-Stock

1+ parts

$42.477

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143

$42.477

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Component Stockers USA

USA . 447 parts In-Stock

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$99.990

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447

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 12,384 parts In-Stock

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12,384

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Corphita

USA . 3,106 parts In-Stock

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3,106

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Parana Technologies

USA . 752 parts In-Stock

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$3.716

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752

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$3.716

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Overview

Unlock the potential of your next project with the M24512-RDW6P EEPROM from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a reliable solution that thrives in demanding environments, operating smoothly from -40 °C to 85 °C. With its compact design and robust endurance, this memory chip ensures efficient data retention and swift performance, making it ideal for consumer electronics, automotive applications, and industrial controls. Elevate your designs with unparalleled reliability and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for industrial applications.

Surface Mount: YES

The surface mount feature simplifies PCB assembly, allowing for compact designs and reduced spatial requirements.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on the circuit board, enhancing the overall design flexibility.

Operating Mode: SYNCHRONOUS

Synchronous operation can improve speed and efficiency in data transfers, making it ideal for high-performance applications.

Nominal Supply Voltage / Vsup (V): 2.5

A nominal supply voltage of 2.5V provides energy efficiency while maintaining effective performance.

Power Supplies (V): 2/5

Supports a range of power supply voltages, allowing adaptability for various applications and designs.

No. of Terminals: 8

Having 8 terminals facilitates multiple connections, enabling versatile circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

A thin profile and small outline design enable space-saving installations in tight environments.

Maximum Operating Temperature: 85 °C

With a high max operating temperature, this EEPROM can function in more demanding environments without risk of failure.

Organization: 64KX8

64KX8 organization allows for efficient data management and retrieval, unique for applications requiring substantial storage.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely low temperatures, this EEPROM is ideal for harsh industrial or outdoor applications.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finishing ensures excellent conductivity and reliability, reducing the risk of corrosion over time.

I2C Control Byte: 1010DDDR

Support for I2C control ensures easy integration into various applications, simplifying communication protocols.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting, contributing to ease of design and assembly.

Write Protection: HARDWARE

Hardware write protection enhances data security, safeguarding against accidental data corruption or loss.

Maximum Seated Height: 1.2 mm

A low seated height allows for versatile placement in compact electronic designs.

Maximum Clock Frequency (fCLK): 0.4 MHz

The maximum clock frequency of 0.4 MHz provides a balance between speed and power consumption for most applications.

Width: 3 mm

A compact width fits well in space-constrained applications, contributing to miniaturization efforts.

Minimum Supply Voltage (Vsup): 1.8 V

A low minimum supply voltage enhances compatibility with various power supply systems, improving design flexibility.

Length: 4.4 mm

Short length design is optimal for small form-factor designs, making it suitable for handheld or wearable devices.

Temperature Grade: INDUSTRIAL

Rated for industrial-grade temperatures, this EEPROM is reliable for use in harsh environments and critical applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, perfect for battery-powered devices.

Parallel or Serial: SERIAL

Serial communication reduces pin count and simplifies connection, making it ideal for modern electronic designs.

Terminal Form: GULL WING

Gull wing terminals improve soldering and mounting stability, ensuring reliable connections on circuit boards.

Maximum Supply Current: 5 mA

A low maximum supply current ensures energy efficiency, essential for battery-powered systems.

No. of Words: 65536 words

Ample word capacity means this EEPROM can store significant amounts of data, suitable for complex applications.

Memory Width: 8

An 8-bit memory width enables efficient data processing, essential for modern applications requiring quick access.

Minimum Data Retention Time: 200

Extended data retention time ensures reliable data storage even during power outages or faults.

Terminal Pitch: 0.65 mm

Narrow terminal pitch allows for higher density configurations, enabling compact circuit designs.

No. of Words Code: 64K

64K word capability provides good data storage for a variety of applications, balancing size and functionality.

Maximum Supply Voltage (Vsup): 5.5 V

The tolerance for a higher maximum supply voltage allows flexibility in design choices, meeting various power specifications.

Endurance: 4000000 Write/Erase Cycles

High endurance means this EEPROM is suitable for applications requiring frequent data rewriting, increasing reliability.

Serial Bus Type: I2C

Support for the I2C bus type simplifies integration with microcontrollers and other devices, enhancing communication efficiency.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time allows for quicker data updates, beneficial in time-sensitive applications.

Memory Density: 524288 bit

High memory density allows for efficient use of space while providing ample data storage for diverse applications.

Memory IC Type: EEPROM

As an EEPROM, this product retains data without power, ensuring reliability in data storage across power cycles.

Maximum Standby Current: 0.000001 Amp

Ultra-low standby current minimizes power consumption during idle periods, extending battery life in portable applications.

Technical Specifications

EEPROM M24512-RDW6P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

4000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24512-RDW6P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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