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AT24C02D-STUM-T

Microchip Technology

AT24C02D-STUM-T by Microchip Technology

AT24C02D-STUM-T by Microchip Technology is a 256x8 EEPROM with a max clock frequency of 1 MHz. It operates at a nominal voltage of 3V and has a memory density of 2048 bits. This EEPROM is commonly used in industrial applications for data storage and retrieval.

Median Price

$0.200

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Microchip Technology

USA . 769 parts In-Stock

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$0.180

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$0.170

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$0.144

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$0.135

769

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$0.135

Mouser Electronics

USA . 4,153 parts In-Stock

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DigiKey

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Verical

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$0.447

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Maritex

Poland . 15,000 parts In-Stock

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Digiode

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TME

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$0.848

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$0.319

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Chip Stock

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Electro Sonic

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IBS Electronics

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Vyrian

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VNN

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Vigor

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Corphita

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South Africa . 897 parts In-Stock

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Aranea Global

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Aztec Data Supply Inc.

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Supply Digital

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Overview

Experience the unparalleled quality and reliability of Microchip Technology with the AT24C02D-STUM-T EEPROM. This cutting-edge product offers numerous advantages for a wide range of applications. With its compact size and surface mount capability, it provides convenience and flexibility for any project. The AT24C02D-STUM-T boasts a high endurance of 1,000,000 write/erase cycles, ensuring longevity and durability. Its low power consumption and wide operating temperature range make it ideal for industrial use. Trust Microchip Technology to deliver exceptional value and performance with the AT24C02D-STUM-T EEPROM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the EEPROM, making it suitable for various environments.

Surface Mount: YES

The surface mount capability allows for easy installation and integration onto circuit boards, saving space and simplifying the manufacturing process.

No. of Functions: 1

With a single function, this EEPROM is straightforward and focused, ensuring efficient operation and ease of use.

Screening Level: TS 16949

Meeting the TS 16949 screening level ensures high-quality manufacturing and reliability, making this EEPROM ideal for automotive applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and compatibility with standard circuit board designs.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise data transfer and synchronized operation, enhancing the overall performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 3

With a nominal supply voltage of 3V, this EEPROM offers compatibility with common power supply systems.

Power Supplies (V): 1.8/3.3

Supporting multiple power supply options (1.8V and 3.3V), this EEPROM offers flexibility for different applications and voltage requirements.

No. of Terminals: 5

With only 5 terminals, this EEPROM simplifies the circuit board layout and reduces complexity during installation.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

The small outline, very thin profile, and shrink pitch package style make this EEPROM suitable for space-constrained applications where size matters.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EEPROM can withstand high-temperature environments, ensuring reliable performance.

Organization: 256X8

The organization of 256X8 means this EEPROM has a capacity to store 256 words, each comprising 8 bits, providing ample storage for data.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics of this EEPROM ensure compatibility with other devices and enable easy interfacing in various circuit designs.

Minimum Operating Temperature: -40 °C

The EEPROM can operate reliably in extremely low temperatures down to -40°C, making it suitable for a wide range of demanding environments.

Terminal Finish: MATTE TIN

The use of matte tin terminal finish enhances solderability and ensures reliable electrical connections, contributing to the overall quality of the EEPROM.

I2C Control Byte: 1010DDDR

The I2C control byte of 1010DDDR allows for easy communication and control of the EEPROM, simplifying integration into I2C-based systems.

Terminal Position: DUAL

With a dual terminal position, the EEPROM allows flexibility in circuit board layout, offering multiple options for convenient connectivity.

No. of Ports: 1

The EEPROM features a single port, providing a straightforward and efficient interface for data transfer and communication.

Write Protection: HARDWARE

The hardware write protection feature ensures data integrity and safeguards against accidental or unauthorized modification, making this EEPROM reliable and secure.

Maximum Seated Height: 1 mm

With a maximum seated height of 1mm, this EEPROM has a low-profile design, enabling its use in applications with limited vertical space.

Maximum Clock Frequency (fCLK): 1 MHz

The maximum clock frequency of 1MHz allows for fast data transfer, enabling quick access to stored information in the EEPROM.

Width: 1.6 mm

The compact width of 1.6mm allows for efficient utilization of space on the circuit board, maximizing the overall effectiveness and compactness of the system.

Minimum Supply Voltage (Vsup): 2.5 V

With a minimum supply voltage of 2.5V, this EEPROM can operate even with lower power supply systems, enhancing its versatility.

Length: 2.9 mm

The length of 2.9mm contributes to the small form factor of this EEPROM, making it suitable for miniaturized applications where space is limited.

Programming Voltage (V): 3

The programming voltage of 3V ensures reliable and efficient programming of the EEPROM, enabling seamless data storage and retrieval.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this EEPROM can withstand harsh operating conditions and maintain excellent performance under challenging environments.

Technology: CMOS

Based on CMOS technology, this EEPROM offers low power consumption, high noise immunity, and excellent data retention, making it a reliable choice for various applications.

Parallel or Serial: SERIAL

With a serial interface, this EEPROM simplifies communication protocols and reduces the number of required connections, providing ease of use and flexibility.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and secure attachment of the EEPROM onto the circuit board, ensuring reliable electrical connections.

Maximum Supply Current: 1 mA

With a maximum supply current of 1mA, this EEPROM operates efficiently with low power consumption, enabling energy-saving designs.

No. of Words: 256 words

With a capacity of 256 words, this EEPROM can store a significant amount of data, making it suitable for various applications requiring reliable data storage.

Memory Width: 8

The memory width of 8 bits allows for the storage and retrieval of data in byte-sized chunks, ensuring efficient data manipulation and processing.

Minimum Data Retention Time: 100

The minimum data retention time of 100 years ensures the long-term integrity and reliability of stored data, making this EEPROM an excellent choice for archival purposes.

Terminal Pitch: 0.95 mm

The tight terminal pitch of 0.95mm allows for high-density chip packaging, enabling efficient use of space and enhancing overall system performance.

No. of Words Code: 256

The 256 words code capacity offers versatility for different applications, enabling customization and adaptability to specific data storage requirements.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this EEPROM is compatible with a wide range of power supply systems, providing flexibility and stability.

Endurance: 1000000 Write/Erase Cycles

The high endurance of 1,000,000 write/erase cycles ensures long-lasting performance and reliability, providing confidence in the durability of this EEPROM.

Serial Bus Type: I2C

Compatible with the I2C serial bus, this EEPROM allows for easy interconnection with other devices, simplifying system integration and communication.

Maximum Write Cycle Time (tWC): 5 ms

The maximum write cycle time of 5ms ensures fast and efficient data programming, reducing overall system operation time and improving productivity.

Memory Density: 2048 bit

With a memory density of 2048 bits, this EEPROM offers sufficient storage capacity for various applications, accommodating the data storage needs effectively.

Memory IC Type: EEPROM

As an EEPROM, this product provides non-volatile, electrically erasable, and reprogrammable memory, offering versatility and reliability in data storage applications.

Maximum Standby Current: 0.0000008 Amp

With an extremely low standby current consumption of only 0.0000008 Amp, this EEPROM minimizes power wastage and ensures efficient operation, making it ideal for energy-conscious designs.

Technical Specifications

EEPROM AT24C02D-STUM-T attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

5

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.0000008 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.6 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

AT24C02D-STUM-T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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