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25AA256XT-I/ST

Microchip Technology

25AA256XT-I/ST by Microchip Technology

25AA256XT-I/ST by Microchip is a 32Kx8 EEPROM with SPI serial bus, 262144-bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85°C, it offers hardware/software write protection and synchronous operation. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,340 parts In-Stock

1+ parts

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6,340

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VNN

France . 2,973 parts In-Stock

1+ parts

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2,973

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 273 parts In-Stock

1+ parts

$3.331

100+ parts

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1k+ parts

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273

$3.331

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AZTECH Wire

Italy . 279 parts In-Stock

1+ parts

$16.480

100+ parts

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279

$16.480

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Argo Parts USA

USA . 2,393 parts In-Stock

1+ parts

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2,393

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West Coast Incorporated

USA . 1,270 parts In-Stock

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1,270

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Continental Prestige Electronics

USA . 1,253 parts In-Stock

1+ parts

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1,253

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Overview

Enhance your electronic projects with the reliable 25AA256XT-I/ST EEPROM by Microchip Technology. Trusted for its top quality and AEC-Q100 screening level, this small outline, thin profile memory device is perfect for a wide range of industrial applications. With a generous 32Kx8 organization and up to 1,000,000 write/erase cycles, this EEPROM offers unparalleled endurance and performance. Say goodbye to data loss worries and hello to seamless operation with the 25AA256XT-I/ST from Microchip Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the EEPROM durable and resistant to physical damage.

Surface Mount: YES

Being surface mountable makes the installation of the EEPROM easier and more efficient.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures that the EEPROM meets automotive industry standards for reliability and performance.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for faster data transfer and communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 2.5

The 2.5V supply voltage ensures compatibility with a wide range of systems and devices.

Power Supplies (V): 2/5

Having both 2V and 5V power supplies allows for flexibility in power options for the EEPROM.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options for the EEPROM in various applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style make the EEPROM compact and suitable for space-constrained designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the EEPROM can perform reliably in a wide range of environmental conditions.

Organization: 32KX8

The 32Kx8 organization provides a good balance between storage capacity and data transfer efficiency for the EEPROM.

Minimum Operating Temperature: -40 °C

The EEPROM can operate effectively in low-temperature environments down to -40°C.

Terminal Finish: Matte Tin (Sn)

The matte tin finish on the terminals ensures good electrical conductivity and solderability.

Terminal Position: DUAL

The dual terminal position allows for increased stability and reliability in the connection of the EEPROM.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection options enhances the security and integrity of the stored data in the EEPROM.

Maximum Seated Height: 1.2 mm

The low seated height of 1.2mm ensures compatibility with compact designs and minimizes the overall profile of the system.

Maximum Clock Frequency (fCLK): 10 MHz

The high maximum clock frequency of 10MHz enables fast data transfer and operation of the EEPROM.

Width: 3 mm

The compact width of 3mm allows for easy integration of the EEPROM into tight spaces.

Minimum Supply Voltage (Vsup): 1.8 V

The 1.8V minimum supply voltage ensures that the EEPROM can operate even in low-power scenarios.

Maximum Time At Peak Reflow Temperature (s): 40

The EEPROM can withstand peak reflow temperatures for up to 40 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures proper soldering and reliability of the EEPROM in manufacturing processes.

Length: 4.4 mm

The compact length of 4.4mm allows for easy integration of the EEPROM into various systems and devices.

Programming Voltage (V): 2.5

The 2.5V programming voltage simplifies the configuration and setup of the EEPROM.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the EEPROM can operate reliably in harsh industrial environments.

Technology: CMOS

The CMOS technology used in the EEPROM enables low power consumption and high-speed operation.

Parallel or Serial: SERIAL

The EEPROM operates in serial mode, allowing for simple communication with other devices and components.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering during installation.

Maximum Supply Current: 6 mA

The low maximum supply current of 6mA ensures minimal power consumption and efficient operation of the EEPROM.

No. of Words: 32768 words

With 32768 words of storage capacity, the EEPROM can store a significant amount of data for various applications.

Memory Width: 8

The 8-bit memory width allows for efficient data storage and retrieval in the EEPROM.

Minimum Data Retention Time: 200

The minimum data retention time of 200 years ensures long-term reliability and integrity of stored data in the EEPROM.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65mm enables high-density mounting of the EEPROM on PCBs.

No. of Words Code: 32K

With a code of 32K words, the EEPROM is easily identifiable and compatible with systems requiring a 32K memory capacity.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V allows for stable operation and protection against voltage fluctuations.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1,000,000 write/erase cycles ensures long-lasting performance and durability of the EEPROM.

Serial Bus Type: SPI

Operating on the SPI serial bus type enables easy integration and communication with other SPI-compatible devices.

Maximum Write Cycle Time (tWC): 5 ms

The short maximum write cycle time of 5ms ensures quick and efficient write operations on the EEPROM.

Memory Density: 262144 bit

With a memory density of 262,144 bits, the EEPROM offers ample storage capacity for various data storage requirements.

Memory IC Type: EEPROM

Being an EEPROM, the memory IC type allows for non-volatile data storage and easy reprogramming of data as needed.

Maximum Standby Current: 0.000001 Amp

The ultra-low maximum standby current of 0.000001A minimizes power consumption during idle periods, enhancing energy efficiency.

Technical Specifications

EEPROM 25AA256XT-I/ST attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.4 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

6 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

25AA256XT-I/ST Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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