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24AA1025-I/P

Microchip Technology

24AA1025-I/P by Microchip Technology

24AA1025-I/P by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring I2C control byte 1010MDDR. It is used in industrial applications for storing data with a memory density of 1048576 bit and endurance of 1000000 write/erase cycles.

Median Price

$4.070

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 3,420 parts In-Stock

1+ parts

$4.070

100+ parts

$3.780

1k+ parts

$3.580

10k+ parts

$3.370

3,420

$4.070

$3.780

$3.580

$3.370

Mouser Electronics

USA . 416 parts In-Stock

1+ parts

$4.070

100+ parts

$3.930

1k+ parts

$3.780

10k+ parts

-

416

$4.070

$3.930

$3.780

-

DigiKey

USA . 180 parts In-Stock

1+ parts

$4.070

100+ parts

$3.780

1k+ parts

-

10k+ parts

-

180

$4.070

$3.780

-

-

Newark

USA . 20 parts In-Stock

1+ parts

$4.070

100+ parts

$3.860

1k+ parts

$3.780

10k+ parts

-

20

$4.070

$3.860

$3.780

-

Master Electronics

USA . 420 parts In-Stock

1+ parts

-

100+ parts

$3.895

1k+ parts

$3.669

10k+ parts

$3.614

420

-

$3.895

$3.669

$3.614

Verical

USA . 420 parts In-Stock

1+ parts

-

100+ parts

$5.304

1k+ parts

$4.797

10k+ parts

-

420

-

$5.304

$4.797

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$4.350

100+ parts

-

1k+ parts

-

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10

$4.350

-

-

-

VNN

France . 4,943 parts In-Stock

1+ parts

-

100+ parts

-

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4,943

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-

-

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Vyrian

USA . 612 parts In-Stock

1+ parts

-

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-

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612

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-

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Prism Electronics

USA . 11 parts In-Stock

1+ parts

-

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11

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LittleDiode

UK . 2 parts In-Stock

1+ parts

-

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Allen Electronics Distributors

USA . 9 parts In-Stock

1+ parts

$2.950

100+ parts

-

1k+ parts

-

10k+ parts

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9

$2.950

-

-

-

Continental Prestige Electronics

USA . 286 parts In-Stock

1+ parts

$3.020

100+ parts

-

1k+ parts

-

10k+ parts

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286

$3.020

-

-

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Ampacity Inc.

Singapore . 718 parts In-Stock

1+ parts

$3.460

100+ parts

-

1k+ parts

-

10k+ parts

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718

$3.460

-

-

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$4.263

100+ parts

-

1k+ parts

$4.092

10k+ parts

-

100

$4.263

-

$4.092

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Argo Parts USA

USA . 2,183 parts In-Stock

1+ parts

$4.350

100+ parts

-

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2,183

$4.350

-

-

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Corohmni

South Africa . 206 parts In-Stock

1+ parts

$4.738

100+ parts

-

1k+ parts

-

10k+ parts

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206

$4.738

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-

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Marpe Global Electronics

Taiwan . 7,475 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,475

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-

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XL Components Corporation

Australia . 7,164 parts In-Stock

1+ parts

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7,164

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-

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Lixinc

USA . 5,185 parts In-Stock

1+ parts

-

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5,185

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-

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QualityLine Systems

Poland . 4,360 parts In-Stock

1+ parts

-

100+ parts

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4,360

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-

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Perfect Parts

USA . 412 parts In-Stock

1+ parts

-

100+ parts

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412

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Overview

Unlock the power of reliable data storage with the 24AA1025-I/P EEPROM by Microchip Technology. Designed for industrial-grade performance, this memory IC offers a high endurance of 1,000,000 write/erase cycles and a wide temperature range from -40°C to 85°C. With a compact package style and low power consumption, it's perfect for applications where space and energy efficiency are key. Trust in Microchip's reputation for quality and innovation, and experience the seamless integration and long-lasting reliability of the 24AA1025-I/P in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the EEPROM, making it suitable for various environmental conditions.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making this EEPROM suitable for automotive applications where stringent standards are required.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise control and timing of data transfer, making the EEPROM efficient and reliable in data storage applications.

Nominal Supply Voltage / Vsup (V): 2.5

Operates at a low nominal supply voltage of 2.5V, providing energy efficiency and compatibility with various systems.

No. of Terminals: 8

The 8 terminals provide connectivity options and flexibility in system integration, allowing for easy installation and usage of the EEPROM.

Maximum Operating Temperature: 85 °C

Can operate efficiently at a high temperature of 85°C, making it suitable for industrial applications where temperature variations may occur.

Write Protection: HARDWARE

Hardware-based write protection ensures data security and integrity, preventing unauthorized write access and safeguarding the stored information.

Endurance: 1000000 Write/Erase Cycles

With a high endurance of 1,000,000 write/erase cycles, the EEPROM offers long-lasting and reliable performance for frequent data storage and retrieval.

Technical Specifications

EEPROM 24AA1025-I/P attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010MDDR

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.271 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

5.334 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA1025-I/P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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