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24LC02BT-I/OTG

Microchip Technology

24LC02BT-I/OTG by Microchip Technology

24LC02BT-I/OTG by Microchip Technology is a 256x8 EEPROM with 2048-bit memory density. It operates at 5V, has a max clock frequency of 0.4 MHz, and offers hardware write protection. Ideal for industrial applications requiring reliable data storage in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 2,319 parts In-Stock

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2,319

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Vyrian

USA . 374 parts In-Stock

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374

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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Corohmni

South Africa . 302 parts In-Stock

1+ parts

$2.572

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302

$2.572

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Aztec Data Supply Inc.

USA . 1,034 parts In-Stock

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$2.720

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1,034

$2.720

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$2.800

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$2.660

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$2.660

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100

$2.800

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$2.660

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Semicontronic

India . 419 parts In-Stock

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$14.000

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$13.650

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$13.580

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419

$14.000

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$13.580

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AZTECH Wire

Italy . 546 parts In-Stock

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$14.713

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Ampacity Inc.

Singapore . 295 parts In-Stock

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$25.000

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Continental Prestige Electronics

USA . 4,465 parts In-Stock

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Marpe Global Electronics

Taiwan . 1,441 parts In-Stock

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QualityLine Systems

Poland . 1,441 parts In-Stock

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XL Components Corporation

Australia . 1,441 parts In-Stock

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Bastille Electronics

Australia . 900 parts In-Stock

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900

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Argo Parts USA

USA . 232 parts In-Stock

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Overview

Unlock endless possibilities with the 24LC02BT-I/OTG EEPROM by Microchip Technology. Known for their top-notch quality and reliability, Microchip Technology brings you a compact and versatile memory solution perfect for industrial applications. With 1000000 write/erase cycles and a wide temperature range, this EEPROM ensures data integrity and durability. Say goodbye to worries about data loss and trust in the unmatched performance of the 24LC02BT-I/OTG for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it a reliable choice for long-term use.

Surface Mount: YES

This feature allows for easy installation and integration into electronic circuits, making the EEPROM convenient to work with.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space in electronic devices, making it a practical choice for compact designs.

Operating Mode: SYNCHRONOUS

The synchronous operation of the EEPROM ensures precise timing and coordination with other components, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with a wide range of systems, making the EEPROM versatile and easy to incorporate.

Power Supplies (V): 3/5

The 3V and 5V power supply options offer flexibility in voltage requirements, making the EEPROM suitable for a variety of applications.

No. of Terminals: 5

The 5 terminals provide ample connectivity options, allowing for seamless integration into circuit designs.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

This package style offers a compact and space-saving design, making the EEPROM ideal for small form factor devices.

Technical Specifications

EEPROM 24LC02BT-I/OTG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XXXR

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.55 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC02BT-I/OTG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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