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AT28C256E-15JU

Microchip Technology

AT28C256E-15JU by Microchip Technology

AT28C256E-15JU by Microchip Technology is a 32Kx8 EEPROM with a memory density of 262144 bits. It operates at an asynchronous mode and has a max access time of 150 ns. This chip is commonly used in industrial applications for its endurance of 100000 write/erase cycles.

Median Price

$12.170

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Chip1Stop

Japan . 2 parts In-Stock

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Arrow

USA . 58 parts In-Stock

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$10.990

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DigiKey

USA . 586 parts In-Stock

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$12.170

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$11.928

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Mouser Electronics

USA . 147 parts In-Stock

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$11.920

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Microchip Technology

USA . 64 parts In-Stock

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$11.250

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$10.650

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$10.040

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Newark

USA . 112 parts In-Stock

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$12.540

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$12.290

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Master Electronics

USA . 252 parts In-Stock

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$12.710

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$12.580

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$12.550

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Future Electronics

Canada . 160 parts In-Stock

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$10.740

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Verical

USA . 112 parts In-Stock

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Avnet

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EBV Elektronik

Germany . 32 parts In-Stock

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Digiode

USA . 809 parts In-Stock

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$8.940

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$8.940

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Nova Conductors

Japan . 50 parts In-Stock

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$12.437

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Bristol Electronics

USA . 14 parts In-Stock

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$13.500

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$9.113

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VNN

France . 4,776 parts In-Stock

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Chip Stock

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IBS Electronics

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Electro Sonic

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$11.510

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$10.610

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$10.450

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Vyrian

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ComSIT Distribution GmbH

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NAC Semi

USA . 32 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 26 parts In-Stock

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R&J Components

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LIBRA Elektronik GmbH

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Corohmni

South Africa . 317 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,562 parts In-Stock

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Semicontronic

India . 187 parts In-Stock

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$8.000

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$7.800

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$7.760

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Ampacity Inc.

Singapore . 57 parts In-Stock

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Corphita

USA . 571 parts In-Stock

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Continental Prestige Electronics

USA . 5,048 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$12.437

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$11.815

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$11.566

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QualityLine Systems

Poland . 8,101 parts In-Stock

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XL Components Corporation

Australia . 5,516 parts In-Stock

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iodParts Technologies Inc.

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Microchip USA

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Argo Parts USA

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Authorized Procurement Solutions

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Supply Digital

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Marpe Global Electronics

Taiwan . 1,687 parts In-Stock

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Lixinc

USA . 672 parts In-Stock

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Perfect Parts

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Robosynatics

Brazil . 250 parts In-Stock

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$3.885

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$3.598

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$3.598

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Lucentia Tech

USA . 250 parts In-Stock

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$3.885

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$3.598

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$3.598

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Assy Fe

Spain . 31 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Microchip Technology with the AT28C256E-15JU EEPROM. This versatile memory device offers a wide range of applications, making it perfect for various industries. With its advanced technology and industrial-grade performance, it ensures efficient data storage and retrieval. The AT28C256E-15JU provides customers with the value they deserve - high endurance with 100,000 write/erase cycles, fast access time of 150 ns, and low power consumption. Trust in Microchip Technology to deliver outstanding products that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and protection for the EEPROM, making it a reliable choice.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation of the EEPROM, making it suitable for compact and space-constrained applications.

No. of Functions: 1

With a single function, this EEPROM simplifies the design and implementation process, making it user-friendly and cost-effective.

Screening Level: MIL-STD-883

The MIL-STD-883 screening level ensures that the EEPROM meets stringent military standards, indicating its high-quality and reliability for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard PCB layouts, facilitating integration into various electronic systems effortlessly.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent and flexible data transfers, enhancing the versatility and efficiency of the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this EEPROM is compatible with a wide range of electronic devices, offering seamless integration and compatibility.

Power Supplies (V): 5

The 5V power supplies ensure stable and reliable operation of the EEPROM, contributing to its overall performance and longevity.

No. of Terminals: 32

The 32 terminals provide sufficient connectivity options, enabling seamless interaction with other components and peripherals in the system.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers compactness and efficient heat dissipation, making it suitable for space-constrained applications while ensuring optimal performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EEPROM can withstand harsh environments, making it suitable for industrial and automotive applications.

Organization: 32KX8

The 32KX8 organization allows for storage of 32 kilowords with each word consisting of 8 bits, providing ample memory capacity for data storage and retrieval.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for multiple devices to be connected to a single bus, simplifying the system design and enhancing flexibility.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this EEPROM can withstand extreme cold temperatures, making it ideal for outdoor or freezing environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability and performance of the EEPROM.

Terminal Position: QUAD

The quad terminal position offers easy alignment and soldering, simplifying the assembly process and contributing to the overall ease of use.

Write Protection: HARDWARE/SOFTWARE

The hardware/software write protection feature ensures the security and integrity of the stored data, preventing unauthorized modifications or erasures.

Maximum Seated Height: 3.556 mm

With a maximum seated height of 3.556 mm, this EEPROM can be easily accommodated in compact electronic devices, allowing for efficient space utilization.

Width: 11.43 mm

The 11.43 mm width makes this EEPROM suitable for applications that require compact and slim designs, enhancing versatility and integration options.

Minimum Supply Voltage (Vsup): 4.5 V

With a minimum supply voltage of 4.5V, this EEPROM can function reliably even under low voltage conditions, ensuring consistent performance.

Page Size (words): 64

The 64-word page size enables efficient programming and erasing operations, optimizing the EEPROM's performance and reducing programming time.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time allowed for peak reflow temperature ensures proper soldering and minimizes the risk of damage to the EEPROM during assembly.

Peak Reflow Temperature °C: 245

With a peak reflow temperature of 245°C, this EEPROM can withstand high-temperature soldering processes, ensuring reliable and robust connections.

Length: 13.97 mm

The 13.97 mm length provides a compact form factor, allowing for easy integration into various electronic systems without compromising functionality.

Programming Voltage (V): 5

The programming voltage of 5V facilitates convenient and efficient programming of the EEPROM, ensuring accurate data storage and retrieval.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial temperature ranges, this EEPROM is suitable for harsh operating conditions, making it a reliable choice for industrial applications.

Technology: CMOS

Utilizing CMOS technology, this EEPROM offers low power consumption, high speed, and compatibility with various digital systems, enhancing its performance and versatility.

Parallel or Serial: PARALLEL

The parallel interface allows for faster data transfers and simpler connectivity, providing efficient communication between the EEPROM and other devices/systems.

Terminal Form: J BEND

The J bend terminal form facilitates easy mounting and soldering, simplifying the assembly process and ensuring a secure electrical connection.

Maximum Supply Current: 50 mA

With a maximum supply current of 50 mA, this EEPROM operates efficiently while consuming minimal power, contributing to energy efficiency and longer battery life.

No. of Words: 32768 words

With a capacity of 32768 words, this EEPROM offers ample storage space, enabling the storage and retrieval of a large amount of data efficiently.

Toggle Bit: YES

The presence of a toggle bit enhances data integrity and error detection, ensuring the accuracy and reliability of the stored information in the EEPROM.

Memory Width: 8

With a memory width of 8 bits, this EEPROM can process and store data in byte-sized chunks, providing compatibility with various software and systems.

Minimum Data Retention Time: 10

The minimum data retention time of 10 years ensures the longevity and reliability of the stored data, making this EEPROM suitable for long-term applications.

Terminal Pitch: 1.27 mm

With a terminal pitch of 1.27 mm, this EEPROM allows for easy and precise soldering, simplifying the assembly process and ensuring a secure connection.

No. of Words Code: 32K

The 32K words code allows for efficient coding and addressing of the stored data, enabling easy access and retrieval when needed.

Moisture Sensitivity Level (MSL): 2

The moisture sensitivity level 2 ensures safe handling and storage of the EEPROM, reducing the risk of moisture-related damage during manufacturing and operation.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, this EEPROM offers a wide voltage range, ensuring compatibility with various power supply systems and applications.

Endurance: 100000 Write/Erase Cycles

The EEPROM's endurance of 100,000 write/erase cycles ensures long-lasting performance, making it a reliable choice for applications requiring frequent data modifications.

Maximum Write Cycle Time (tWC): 10 ms

The maximum write cycle time of 10 ms allows for fast and efficient data programming, reducing the overall processing time and enhancing productivity.

Memory Density: 262144 bit

With a memory density of 262,144 bits, this EEPROM provides ample storage capacity, making it suitable for applications that require extensive data storage.

Memory IC Type: EEPROM

Being an EEPROM, this memory IC offers non-volatile storage capability, allowing for data retention even when the power is disconnected, ensuring data integrity and reliability.

Maximum Standby Current: 0.0002 Amp

With a maximum standby current of 0.0002 Amp, this EEPROM operates in a low-power standby mode, minimizing power consumption and extending battery life.

Maximum Access Time: 150 ns

With a maximum access time of 150 ns, this EEPROM offers fast data retrieval, ensuring quick and responsive performance in data-intensive applications.

Data Polling: YES

The data polling feature allows for efficient checking and detection of data readiness, ensuring accurate and timely access to the required information in the EEPROM.

Technical Specifications

EEPROM AT28C256E-15JU attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Access Time:

150 ns

Additional Features:

AUTOMATIC WRITE

Command User Interface:

NO

Data Polling:

YES

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Page Size (words):

64

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

245

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-STD-883

Maximum Seated Height:

3.556 mm

Maximum Standby Current:

.0002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Width:

11.43 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

AT28C256E-15JU Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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