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24AA32AF-I/SN

Microchip Technology

24AA32AF-I/SN by Microchip Technology

24AA32AF-I/SN by Microchip Technology is an EEPROM with 4Kx8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

Median Price

$0.460

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Microchip Technology

USA . 17,827 parts In-Stock

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$0.460

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$0.420

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$0.410

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$0.370

17,827

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$0.370

DigiKey

USA . 210 parts In-Stock

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$0.460

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Mouser Electronics

USA . 477 parts In-Stock

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$0.490

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$0.461

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477

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NAC Semi

USA . 14,200 parts In-Stock

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$0.510

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$0.460

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$0.410

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$0.510

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VNN

France . 28,091 parts In-Stock

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Chip Stock

USA . 3,447 parts In-Stock

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Vyrian

USA . 2,218 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Ampacity Inc.

Singapore . 542 parts In-Stock

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$0.391

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542

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S.R.D Solutions

India . 10,000 parts In-Stock

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Lixinc

USA . 9,094 parts In-Stock

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Formix International (Excess)

India . 5,152 parts In-Stock

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Infinite Electronics LLP (Excess)

. 4,952 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Fulton Briggs Corp.

USA . 50 parts In-Stock

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Overview

Enhance your electronics projects with the reliable 24AA32AF-I/SN EEPROM from Microchip Technology. Known for their top-notch quality and cutting-edge technology, Microchip Technology brings you a versatile memory solution that offers 1000000 write/erase cycles for long-lasting performance. Ideal for industrial applications, this EEPROM operates at a wide temperature range, ensuring functionality even in challenging environments. Experience the convenience of hardware write protection and I2C control byte for seamless integration into your designs. Upgrade your projects with the value and reliability of Microchip Technology's 24AA32AF-I/SN EEPROM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM chip, ensuring long-term reliability.

Surface Mount: YES

The ability to be surface mounted makes for easy and efficient installation on circuit boards.

Screening Level: TS 16949

Compliance with TS 16949 standards ensures high quality and reliability in automotive applications.

Nominal Supply Voltage / Vsup (V): 2.5

Operating at a low nominal supply voltage of 2.5V helps in reducing power consumption.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this EEPROM can withstand harsh environmental conditions.

No. of Terminals: 8

Having 8 terminals allows for easy interface with other components in the circuit.

Organization: 4KX8

The 4KX8 organization provides a good balance of storage capacity and access speed.

Write Protection: HARDWARE

Hardware-based write protection adds an extra layer of security to prevent accidental data corruption.

Technology: CMOS

Being fabricated using CMOS technology ensures low power consumption and high noise immunity.

Technical Specifications

EEPROM 24AA32AF-I/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA32AF-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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