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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
PCF8582C-2T/03,112 by NXP Semiconductors

PCF8582C-2T/03,112

NXP Semiconductors

PCF8582C-2T/03,112 by NXP Semiconductors is an I2C-controlled EEPROM with 256x8 organization. Operating at 3.3V, it offers a max clock frequency of 0.1 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

10 ms

PCF8582C-2T/03,118 by NXP Semiconductors

PCF8582C-2T/03,118

NXP Semiconductors

PCF8582C-2T/03,118 by NXP Semiconductors is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates synchronously at 0.1 MHz for industrial applications requiring up to 1000000 write/erase cycles.

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

PCF8594C-2P/02,112 by NXP Semiconductors

PCF8594C-2P/02,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; No. of Functions: 1;

.1 MHz

10

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.5 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

.8 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

PCF8594C-2T/02,112 by NXP Semiconductors

PCF8594C-2T/02,112

NXP Semiconductors

PCF8594C-2T/02,112 by NXP Semiconductors is an 8-terminal EEPROM with 512x8 organization, operating at 3.3V and featuring I2C serial bus type. It has a max clock frequency of 0.1 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.1 MHz

10

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.0000035 Amp

EEPROMs

.8 mA

6 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

PCF8594C-2T/02,118 by NXP Semiconductors

PCF8594C-2T/02,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;

.1 MHz

10

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

EEPROMs

6 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

PCF8598C-2P/02,112 by NXP Semiconductors

PCF8598C-2P/02,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; I2C Control Byte: 1010DMMR;

DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE

.1 MHz

10

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e4

9.5 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.00001 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

PCF8598C-2T/02,112 by NXP Semiconductors

PCF8598C-2T/02,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE

.1 MHz

10

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e4

7.55 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.65 mm

I2C

.00001 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.5 mm

10 ms

HARDWARE

PCF8598C-2T/02,118 by NXP Semiconductors

PCF8598C-2T/02,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE

.1 MHz

10

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e4

7.55 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.65 mm

I2C

.00001 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.5 mm

10 ms

HARDWARE

CAT28C256L15 by Onsemi

CAT28C256L15

Onsemi

CAT28C256L15 by Onsemi is a 32KX8 EEPROM with 262144 bit memory density. It operates at 5V, has 100000 Write/Erase Cycles endurance, and offers 150 ns access time. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

150 ns

NO

YES

100

100000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.08 mm

.00015 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

PCF85103C-2T/00,11 by NXP Semiconductors

PCF85103C-2T/00,11

NXP Semiconductors

NXP Semiconductors' PCF85103C-2T/00,11 is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates at a max clock frequency of 0.1 MHz and has a min data retention time of 10 seconds. Ideal for industrial applications requiring reliable non-volatile memory storage.

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

10 ms

PCF85102C-2T/03,11 by NXP Semiconductors

PCF85102C-2T/03,11

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

2.7

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

10 ms

PCA24S08DP,118 by NXP Semiconductors

PCA24S08DP,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: SQUARE; JESD-30 Code: S-PDSO-G8;

.4 MHz

10

100000 Write/Erase Cycles

10101MMR

S-PDSO-G8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3/3.3

Not Qualified

1.1 mm

I2C

.000015 Amp

EEPROMs

1 mA

3.6 V

2.5 V

YES

CMOS

INDUSTRIAL

SILVER

GULL WING

.65 mm

DUAL

3 mm

HARDWARE/SOFTWARE

PCA24S08D,118 by NXP Semiconductors

PCA24S08D,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Serial Bus Type: I2C;

.4 MHz

10

100000 Write/Erase Cycles

10101MMR

R-PDSO-G8

e4

4.9 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

Not Qualified

1.75 mm

I2C

.000015 Amp

EEPROMs

1 mA

3.6 V

2.5 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

HARDWARE/SOFTWARE

M93C46-RDW3TP/K by STMicroelectronics

M93C46-RDW3TP/K

STMicroelectronics

M93C46-RDW3TP/K by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode, ideal for automotive applications. It features an AEC-Q100 screening level, operates b/w -40 °C to 125 °C, and supports a max clock frequency of 2 MHz. This compact device ensures reliable performance in harsh environments with its dual terminal design and small outline package.

8

2 MHz

R-PDSO-G8

e4

4.4 mm

1024 bit

EEPROM

16

1

1

8

64 words

64

SYNCHRONOUS

125 Cel

-40 Cel

64X16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

AEC-Q100

1.2 mm

MICROWIRE

5.5 V

1.8 V

2.5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

4 ms

M93C86-RDW3TP/K by STMicroelectronics

M93C86-RDW3TP/K

STMicroelectronics

M93C86-RDW3TP/K by STMicroelectronics is a 16-bit EEPROM with a 1Kx16 organization, operating b/w -40 °C to 125 °C. It features a synchronous mode with a max clock frequency of 2 MHz and supports automotive applications. Its compact design ensures efficient surface mounting in space-constrained environments.

8

2 MHz

R-PDSO-G8

e4

4.4 mm

16384 bit

EEPROM

16

1

1

8

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

AEC-Q100

1.2 mm

MICROWIRE

5.5 V

1.8 V

2.5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

4 ms

LE24162LBXA-SH by Onsemi

LE24162LBXA-SH

Onsemi

LE24162LBXA-SH by Onsemi is a 2KX8 EEPROM with 2048 words, 16384 bit memory density, and 100000 Write/Erase Cycles. It operates at -40 to 85 °C, has a 0.4 MHz clock frequency, and uses I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in compact devices.

.4 MHz

20

100000 Write/Erase Cycles

1010MMMR

R-PBGA-B6

e1

1.2 mm

16384 bit

EEPROM

8

1

1

6

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

VFBGA

BGA6,2X3,16

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

1.8/3.3

Not Qualified

.33 mm

I2C

.000002 Amp

EEPROMs

5 mA

3.6 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

30

.8 mm

5 ms

HARDWARE

CAT34C02HU3I-GT4A by Onsemi

CAT34C02HU3I-GT4A

Onsemi

CAT34C02HU3I-GT4A by Onsemi is a 256-bit EEPROM with I2C control byte. It operates at 5V, has 16x16 organization, and offers hardware/software write protection. Ideal for industrial applications, it features a small outline package with very thin profile and nickel palladium gold terminal finish.

100 YEAR DATA RETENTION

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

256 bit

EEPROM

16

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

Not Qualified

.55 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE/SOFTWARE

CAT34C02HU4IGT4A by Onsemi

CAT34C02HU4IGT4A

Onsemi

CAT34C02HU4IGT4A by Onsemi is an EEPROM with 256-bit memory density, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications, it has a small outline package with a very thin profile and operates in synchronous mode up to 0.4 MHz clock frequency.

100 YEAR DATA RETENTION

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

256 bit

EEPROM

16

1

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

16

SERIAL

260

1.8/5

Not Qualified

YES

NO

.55 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

34AA02T-E/MNY by Microchip Technology

34AA02T-E/MNY

Microchip Technology

34AA02T-E/MNY by Microchip Technology is an EEPROM with 256x8 organization, operating at 2.5V, and featuring I2C control byte 1010DDDR. Ideal for automotive applications, it offers a max clock frequency of 0.4 MHz, endurance of 1M cycles, and operates in the temperature range of -40 to 125°C.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

125 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

.8 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE/SOFTWARE

24LC08B-E/MC by Microchip Technology

24LC08B-E/MC

Microchip Technology

24LC08B-E/MC by Microchip Technology is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles. Operating in the automotive temperature grade range of -40 to 125 °C, it features I2C serial bus type for applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-N8

e3

3 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

24LC08BT-E/MC by Microchip Technology

24LC08BT-E/MC

Microchip Technology

24LC08BT-E/MC by Microchip Technology is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 write/erase cycles. Operating in automotive grade at -40 to 125 °C, it uses I2C serial bus for applications requiring reliable data storage in harsh environments.

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-N8

e3

3 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

25LC512T-I/SM by Microchip Technology

25LC512T-I/SM

Microchip Technology

25LC512T-I/SM by Microchip Technology is a serial EEPROM with 64KX8 organization, SPI interface, and 20 MHz clock frequency. It operates at -40 to 85 °C, has 1000000 Write/Erase cycles endurance, and is ideal for industrial applications requiring reliable non-volatile memory storage.

2.5V TO 5.5V @ 10MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.26 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/5

5

Not Qualified

AEC-Q100

2.03 mm

SPI

.00001 Amp

EEPROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE/SOFTWARE

25LC640-I/SNG by Microchip Technology

25LC640-I/SNG

Microchip Technology

25LC640-I/SNG by Microchip Technology is an 8KX8 EEPROM with SPI interface, operating at 2 MHz. It has a memory density of 65536 bit and can endure 100000 Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

2 MHz

200

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

25LC640T-I/SNG by Microchip Technology

25LC640T-I/SNG

Microchip Technology

25LC640T-I/SNG by Microchip Technology is an EEPROM with 8KX8 organization, SPI serial bus type, and 2 MHz clock frequency. It is ideal for industrial applications requiring a memory density of 65536 bit, operating b/w -40 to 85 °C temperatures.

2 MHz

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

Not Qualified

1.75 mm

SPI

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

11AA010-I/P by Microchip Technology

11AA010-I/P

Microchip Technology

11AA010-I/P by Microchip Technology is an EEPROM with 128x8 organization, operating at 1 MHz clock frequency. It has a max write cycle time of 10 ms and can endure up to 1,000,000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

1 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

NO

NO

TS 16949

5.334 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

7.62 mm

10 ms

SOFTWARE

11AA020-I/MS by Microchip Technology

11AA020-I/MS

Microchip Technology

11AA020-I/MS by Microchip Technology is an EEPROM with 256x8 organization, 2048-bit memory density, and 1-WIRE serial bus type. It operates at a max clock frequency of 1 MHz and has a write protection feature for software applications. Ideal for industrial use with a temperature grade of -40 to 85 °C, it offers high endurance with 1000000 write/erase cycles.

1 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

NO

NO

TS 16949

1.1 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

NO

3 mm

10 ms

SOFTWARE

11AA020T-I/MS by Microchip Technology

11AA020T-I/MS

Microchip Technology

11AA020T-I/MS by Microchip Tech is a 256x8 EEPROM with 1-WIRE serial bus, 1000000 write/erase cycles endurance, and 2048-bit memory density. Operating at -40 to 85 °C, it has a max clock frequency of 1 MHz and software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

1 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

NO

NO

TS 16949

1.1 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

NO

3 mm

10 ms

SOFTWARE

11AA020T-I/SN by Microchip Technology

11AA020T-I/SN

Microchip Technology

11AA020T-I/SN by Microchip Technology is an EEPROM with 256x8 organization, 2048-bit memory density, and 1-WIRE serial bus type. It operates at a max clock frequency of 1 MHz and has a write protection feature for software security. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

NO

NO

TS 16949

1.75 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

NO

3.9 mm

10 ms

SOFTWARE

11LC010-I/P by Microchip Technology

11LC010-I/P

Microchip Technology

11LC010-I/P by Microchip Technology is an EEPROM with 128x8 organization, operating at 1 MHz clock frequency. It has a memory density of 1024 bit and can endure up to 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

NO

NO

TS 16949

5.334 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

NO

7.62 mm

10 ms

SOFTWARE

24LC08BHT-E/OT by Microchip Technology

24LC08BHT-E/OT

Microchip Technology

24LC08BHT-E/OT by Microchip Technology is a 1Kx8 EEPROM with 8192-bit memory density. Operating at 5V, it offers 1000000 write/erase cycles and supports I2C serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-G5

e3

2.9 mm

8192 bit

EEPROM

8

1

1

1

5

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.45 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

.95 mm

DUAL

40

1.55 mm

5 ms

HARDWARE

M24256-BRCS6TP/A by STMicroelectronics

M24256-BRCS6TP/A

STMicroelectronics

M24256-BRCS6TP/A by STMicroelectronics is a 32Kx8 EEPROM with a very thin profile, ideal for space-constrained applications. It operates in synchronous mode with a max clock frequency of 0.4 MHz and supports I2C communication. With an industrial temp range (-40 °C to 85°C) and hardware write protection, it's perfect for reliable data storage.

1

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PBGA-B8

1.97 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

VFBGA

BGA8,3X5,17/10

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.65 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

1.785 mm

5 ms

HARDWARE

M24256-BWMN6TP/K by STMicroelectronics

M24256-BWMN6TP/K

STMicroelectronics

M24256-BWMN6TP/K by STMicroelectronics is a 32Kx8 EEPROM with I2C control, 262144-bit memory density, and 1000000 write/erase cycles. It operates in synchronous mode with a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

1

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

HARDWARE

CAT24C64ZI-GT3 by Onsemi

CAT24C64ZI-GT3

Onsemi

CAT24C64ZI-GT3 by Onsemi is an 8KX8 EEPROM with I2C control byte. It operates at 1 MHz clock frequency, has 1000000 write/erase cycles endurance, and supports a max supply voltage of 5.5V. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

100 YEAR DATA RETENTION

1 MHz

100

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

1.8/5

Not Qualified

1.1 mm

I2C

.000003 Amp

EEPROMs

2 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

11AA010T-I/SN by Microchip Technology

11AA010T-I/SN

Microchip Technology

11AA010T-I/SN by Microchip Technology is a 1024-bit EEPROM with 128x8 organization. It operates at 1 MHz clock frequency, has 1000000 write/erase cycles endurance, and uses a serial bus type of 1-WIRE. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package style.

1 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

NO

NO

TS 16949

1.75 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

NO

3.9 mm

10 ms

SOFTWARE

M24128-BFCS6TP/A by STMicroelectronics

M24128-BFCS6TP/A

STMicroelectronics

M24128-BFCS6TP/A by STMicroelectronics is a 16Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w -40 °C to 85°C, supports up to 5.5V supply, and features hardware write protection for reliable data retention. Ideal for industrial applications requiring compact memory solutions.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PBGA-B8

1.805 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

VFBGA

BGA8,3X5,17/10

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.635 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

1.4 mm

5 ms

HARDWARE

XQ18V04VQ44N by Xilinx

XQ18V04VQ44N

Xilinx

CONFIGURATION MEMORY; Temperature Grade: MILITARY; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Seated Height: 1.2 mm;

20 MHz

10

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

125 Cel

-55 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

MILITARY

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

40k Rad(Si)

NOR TYPE

10 mm

AT17LV010A-10PI by Atmel

AT17LV010A-10PI

Atmel

AT17LV010A-10PI by Atmel is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 10 MHz clock frequency and has a max supply voltage of 3.6 V. Ideal for industrial applications requiring configuration memory in synchronous mode with hardware write protection.

ALSO OPERATES AT 5V SUPPLY

10 MHz

R-PDIP-T8

e0

9.271 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3/5

Not Qualified

5.334 mm

EEPROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

HARDWARE

24AA128-I/MF by Microchip Technology

24AA128-I/MF

Microchip Technology

24AA128-I/MF by Microchip Technology is an EEPROM with 16KX8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and can endure 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC128-E/MF by Microchip Technology

24LC128-E/MF

Microchip Technology

24LC128-E/MF by Microchip Technology is an EEPROM with 16Kx8 organization, operating at 4.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

125 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC128-I/MF by Microchip Technology

24LC128-I/MF

Microchip Technology

24LC128-I/MF by Microchip Technology is an EEPROM with 16Kx8 organization, 131072-bit memory density, and 1000000 write/erase cycles. It operates on a supply voltage range of 2.5V to 5.5V and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage with I2C serial bus interface.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC128T-E/MF by Microchip Technology

24LC128T-E/MF

Microchip Technology

24LC128T-E/MF by Microchip Technology is an EEPROM with 16Kx8 organization, operating at 4.5V, and offering 1000000 write/erase cycles. It is suitable for automotive applications due to AEC-Q100 screening level, I2C serial bus type, and -40 to 125°C temperature range. The device features a small outline package with very thin profile and matte tin terminal finish.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

125 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC128T-I/MF by Microchip Technology

24LC128T-I/MF

Microchip Technology

24LC128T-I/MF by Microchip Technology is an EEPROM with 16KX8 organization, 131072 bit memory density, and 1000000 Write/Erase cycles. It operates on a supply voltage range of 2.5V to 5.5V and features I2C serial bus type for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

VSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC128T-I/ST14 by Microchip Technology

24LC128T-I/ST14

Microchip Technology

24LC128T-I/ST14 by Microchip is a 16KX8 EEPROM with 131072 bit memory density. It operates at 0.4 MHz clock frequency, has 1000000 Write/Erase cycles endurance, and uses I2C serial bus type. Ideal for industrial applications due to its -40 to 85 °C operating temperature range and small outline package style.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G14

e3

5 mm

131072 bit

EEPROM

8

1

1

14

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

TSSOP

TSSOP14,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

4.4 mm

5 ms

HARDWARE

24AA256T-I/MF by Microchip Technology

24AA256T-I/MF

Microchip Technology

24AA256T-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 2.5V and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz, 1000000 write/erase cycles endurance, and -40 to 85 °C temperature range. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24FC256-I/MF by Microchip Technology

24FC256-I/MF

Microchip Technology

24FC256-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, 262144 bit memory density, and 1000000 write/erase cycles. It operates in synchronous mode at a max clock frequency of 1 MHz via I2C serial bus. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC16B-E/MS by Microchip Technology

24LC16B-E/MS

Microchip Technology

24LC16B-E/MS by Microchip Technology is a 2Kx8 EEPROM with I2C control byte 1010MMMR. Operating at 5V, it offers 1000000 write/erase cycles and -40 to 125°C temperature range. Ideal for automotive applications due to AEC-Q100 screening level and small outline package style.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

S-PDSO-G8

e3

3 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24LC256-E/MF by Microchip Technology

24LC256-E/MF

Microchip Technology

24LC256-E/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 4.5V, and featuring I2C serial bus type. Ideal for automotive applications due to AEC-Q100 screening level, it offers 1mm seated height and 1000000 write/erase cycles endurance.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC256T-I/MF by Microchip Technology

24LC256T-I/MF

Microchip Technology

24LC256T-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 4.5V, and featuring I2C control byte 1010DDDR. It has a memory density of 262144 bit, endurance of 1M cycles, and operates in industrial temperature range. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE