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CAT28C256L15

Onsemi

CAT28C256L15 by Onsemi

CAT28C256L15 by Onsemi is a 32KX8 EEPROM with 262144 bit memory density. It operates at 5V, has 100000 Write/Erase Cycles endurance, and offers 150 ns access time. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 61,000 parts In-Stock

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Digiode

USA . 1,506 parts In-Stock

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Vyrian

USA . 253 parts In-Stock

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Nova Conductors

Japan . 77 parts In-Stock

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Ampacity Inc.

Singapore . 671 parts In-Stock

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$2.000

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671

$2.000

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AZTECH Wire

Italy . 1,116 parts In-Stock

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$15.855

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SupplyDigital Components

Austria . 7,411 parts In-Stock

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TANS Electronics

Latvia . 6,689 parts In-Stock

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Kulean Microsystems

USA . 6,591 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Corphita

USA . 2,147 parts In-Stock

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Bastille Electronics

Australia . 1,250 parts In-Stock

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Problanco Electronics

Mexico . 858 parts In-Stock

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Corohmni

South Africa . 447 parts In-Stock

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Microchip USA

USA . 336 parts In-Stock

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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Overview

Unlock endless possibilities with the Onsemi CAT28C256L15 EEPROM. With a reputation for top-quality products, Onsemi delivers reliability and performance in every device. Perfect for a wide range of applications, this EEPROM offers unparalleled value with its 32KX8 organization and 100,000 write/erase cycles endurance. Experience seamless operation and fast access times with the CAT28C256L15, making it the ideal choice for your next project. Elevate your designs with Onsemi's cutting-edge technology, trustworthiness, and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and commonly used for electronic components, ensuring the product is sturdy and long-lasting.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of systems and power sources.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent functioning without the need for strict timing constraints, providing flexibility in applications.

Organization: 32KX8

The organization of 32KX8 means the EEPROM can store 32,768 words of 8 bits each, offering a substantial memory capacity.

Endurance: 100000 Write/Erase Cycles

With a high endurance of 100,000 write/erase cycles, this EEPROM can withstand frequent data read/write operations, ensuring reliability and longevity.

Technical Specifications

EEPROM CAT28C256L15 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Access Time:

150 ns

Command User Interface:

NO

Data Polling:

YES

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

e3

Length:

36.695 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Page Size (words):

64

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Standby Current:

.00015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Width:

15.24 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

CAT28C256L15 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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