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AT24C512C-SSHD-T-899

Microchip Technology

AT24C512C-SSHD-T-899 by Microchip Technology

AT24C512C-SSHD-T-899 by Microchip: 64KX8 EEPROM with 524288 bit memory density, operates at 1 MHz clock frequency. Ideal for industrial applications requiring reliable data storage in a compact package.

Median Price

$2.449

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$2.449

100+ parts

$2.327

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$2.327

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40

$2.449

$2.327

$2.327

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,695 parts In-Stock

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6,695

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VNN

France . 2,151 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Distributors (Availability)

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Semicontronic

India . 40 parts In-Stock

1+ parts

$2.080

100+ parts

$2.028

1k+ parts

$2.018

10k+ parts

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40

$2.080

$2.028

$2.018

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Aztec Data Supply Inc.

USA . 352 parts In-Stock

1+ parts

$2.419

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352

$2.419

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$2.449

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$2.327

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$2.327

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40

$2.449

$2.327

$2.327

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Ampacity Inc.

Singapore . 40 parts In-Stock

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$4.530

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40

$4.530

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Corohmni

South Africa . 79 parts In-Stock

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$4.725

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AZTECH Wire

Italy . 749 parts In-Stock

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$15.858

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749

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West Coast Incorporated

USA . 7,282 parts In-Stock

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Continental Prestige Electronics

USA . 4,618 parts In-Stock

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Argo Parts USA

USA . 1,666 parts In-Stock

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1,666

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Robosynatics

Brazil . 200 parts In-Stock

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$2.443

1k+ parts

$2.262

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$2.262

200

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$2.443

$2.262

$2.262

Lucentia Tech

USA . 200 parts In-Stock

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100+ parts

$2.443

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$2.262

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$2.262

200

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$2.443

$2.262

$2.262

Overview

Unleash the power of reliable and high-quality data storage with the AT24C512C-SSHD-T-899 by Microchip Technology. This small but mighty EEPROM offers unparalleled value and benefits to customers, with 1,000,000 write/erase cycles ensuring longevity and durability. Ideal for industrial applications, the AT24C512C-SSHD-T-899 provides a secure and efficient solution for storing critical data. Trust Microchip Technology for cutting-edge technology and top-notch performance in every product they offer. Elevate your projects with the AT24C512C-SSHD-T-899 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and heat-resistant material ensures longevity and reliability of the EEPROM.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage for efficient operation and performance.

Operating Mode: SYNCHRONOUS

Synchronous operation provides precise timing and control for data transfer.

Memory Density: 524288 bit

High memory density allows for storing a large amount of data in a compact device.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures data integrity and longevity of the EEPROM.

Serial Bus Type: I2C

I2C interface enables easy communication with other devices, enhancing versatility and compatibility.

Technical Specifications

EEPROM AT24C512C-SSHD-T-899 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.925 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000006 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

AT24C512C-SSHD-T-899 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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