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93LC56BT-I/OTG

Microchip Technology

93LC56BT-I/OTG by Microchip Technology

Microchip Technology's 93LC56BT-I/OTG is a serial EEPROM with 128x16 organization, 2048-bit memory density, and 1000000 write/erase cycles. Operating at up to 2 MHz clock frequency, it suits industrial applications requiring low-profile memory solutions with software write protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 4,720 parts In-Stock

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4,720

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ACDS - Activité Composants Distribution Service

France . 2,801 parts In-Stock

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2,801

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Vyrian

USA . 1,026 parts In-Stock

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1,026

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Nova Conductors

Japan . 41 parts In-Stock

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41

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,121 parts In-Stock

1+ parts

$2.490

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2,121

$2.490

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Semicontronic

India . 853 parts In-Stock

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$4.000

100+ parts

$3.900

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$3.880

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853

$4.000

$3.900

$3.880

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Corohmni

South Africa . 391 parts In-Stock

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$4.113

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391

$4.113

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AZTECH Wire

Italy . 520 parts In-Stock

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$19.460

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520

$19.460

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Perfect Parts

USA . 6,274 parts In-Stock

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Marpe Global Electronics

Taiwan . 5,421 parts In-Stock

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QualityLine Systems

Poland . 5,421 parts In-Stock

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XL Components Corporation

Australia . 5,421 parts In-Stock

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Argo Parts USA

USA . 4,782 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,801 parts In-Stock

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2,801

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Glotronic Ltd.

UK . 2,241 parts In-Stock

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Continental Prestige Electronics

USA . 1,773 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Overview

Unlock the power of reliable data storage with the 93LC56BT-I/OTG by Microchip Technology. As a leading manufacturer in the industry, Microchip guarantees top-notch quality and performance. This EEPROM is perfect for a wide range of applications, providing secure and efficient memory storage. With its small outline and low profile package style, this device offers convenience without sacrificing functionality. Experience peace of mind with software write protection and up to 1,000,000 write/erase cycles. Trust Microchip Technology to deliver cutting-edge solutions that meet your needs seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers durability and protection for the internal components of the EEPROM, ensuring long-term reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise control and timing, enhancing the overall performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EEPROM can withstand high heat conditions without compromising functionality.

Endurance: 1000000 Write/Erase Cycles

High endurance of 1,000,000 write/erase cycles ensures longevity and reliability of the EEPROM.

Technical Specifications

EEPROM 93LC56BT-I/OTG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

1.55 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93LC56BT-I/OTG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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