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93LC56B-I/SNG

Microchip Technology

93LC56B-I/SNG by Microchip Technology

93LC56B-I/SNG by Microchip Technology is a 2048-bit EEPROM with 128x16 organization, operating at 2MHz. It has a serial bus type of MICROWIRE and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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VNN

France . 1,303 parts In-Stock

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Vyrian

USA . 332 parts In-Stock

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Bristol Electronics

USA . 214 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Corohmni

South Africa . 255 parts In-Stock

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$3.367

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Aztec Data Supply Inc.

USA . 3,014 parts In-Stock

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$3.970

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Ampacity Inc.

Singapore . 521 parts In-Stock

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Semicontronic

India . 1,148 parts In-Stock

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$10.000

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$9.750

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$9.700

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AZTECH Wire

Italy . 597 parts In-Stock

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$19.850

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Continental Prestige Electronics

USA . 5,412 parts In-Stock

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West Coast Incorporated

USA . 3,373 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 500 parts In-Stock

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Perfect Parts

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ChipTracer

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Overview

Unlock the power of reliable data storage with the 93LC56B-I/SNG EEPROM by Microchip Technology. Crafted with precision and quality, this small outline memory device offers a vast array of applications in industrial settings. With a robust construction and advanced technology, this EEPROM ensures data integrity and security, providing customers with peace of mind. Say goodbye to worries about data loss and hello to seamless operations with the 93LC56B-I/SNG by Microchip Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the EEPROM a reliable choice for various applications.

Surface Mount: YES

The surface mount feature allows for easy installation and integration into electronic devices.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, ideal for space-constrained applications.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise and efficient data transfer, making this EEPROM suitable for high-performance systems.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and consistent power delivery for reliable memory storage.

Power Supplies (V): 3/5

This allows for flexibility in power options, accommodating different system requirements.

No. of Terminals: 8

The 8 terminals provide ample connectivity options for easy integration into circuit boards.

Package Style (Meter): SMALL OUTLINE

The small outline design saves space and allows for a higher component density on PCBs.

Alternate Memory Width: 8

The 8-bit memory width offers efficient data storage and retrieval capabilities.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this EEPROM can withstand harsh environmental conditions.

Technical Specifications

EEPROM 93LC56B-I/SNG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93LC56B-I/SNG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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