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93LC46BT-I/OTG

Microchip Technology

93LC46BT-I/OTG by Microchip Technology

93LC46BT-I/OTG by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 3V. It features a serial interface, software write protection, and industrial temperature grade. Ideal for applications requiring low-profile memory storage in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 3,935 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,219 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,219 parts In-Stock

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Vyrian

USA . 886 parts In-Stock

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Nova Conductors

Japan . 74 parts In-Stock

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Ampacity Inc.

Singapore . 914 parts In-Stock

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$4.000

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914

$4.000

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Aztec Data Supply Inc.

USA . 842 parts In-Stock

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$5.350

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842

$5.350

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Corohmni

South Africa . 1,228 parts In-Stock

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$5.487

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$5.487

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AZTECH Wire

Italy . 886 parts In-Stock

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$15.729

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886

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Semicontronic

India . 902 parts In-Stock

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$22.000

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$21.450

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$21.340

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902

$22.000

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$21.340

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Continental Prestige Electronics

USA . 6,504 parts In-Stock

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Argo Parts USA

USA . 3,802 parts In-Stock

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RGB Technical Solutions

Ukraine . 2,893 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Experience superior data storage with the 93LC46BT-I/OTG EEPROM by Microchip Technology. Known for their top-notch quality and reliability, Microchip delivers cutting-edge technology in a small outline package, making it perfect for a wide range of industrial applications. With a maximum clock frequency of 2MHz and up to 1000000 write/erase cycles, this memory IC offers unmatched endurance and performance. Trust Microchip Technology to provide you with the best solutions for your data storage needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection for the EEPROM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise data transfer and communication, enhancing the overall performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal voltage of 3V ensures compatibility with a wide range of systems and devices.

Memory Density: 1024 bit

With a high memory density of 1024 bits, this EEPROM can store a large amount of data efficiently.

Endurance: 1000000 Write/Erase Cycles

High endurance rating of 1,000,000 write/erase cycles ensures reliable and long-lasting storage capabilities.

Serial Bus Type: MICROWIRE

Microwire serial bus type offers fast and efficient data transmission, ideal for applications requiring quick access to stored information.

Technical Specifications

EEPROM 93LC46BT-I/OTG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

1.55 mm

Maximum Write Cycle Time (tWC):

6 ms

Write Protection:

SOFTWARE

Trade Compliance

93LC46BT-I/OTG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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