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M93C46-RDW3TP/K

STMicroelectronics

M93C46-RDW3TP/K by STMicroelectronics

M93C46-RDW3TP/K by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode, ideal for automotive applications. It features an AEC-Q100 screening level, operates b/w -40 °C to 125 °C, and supports a max clock frequency of 2 MHz. This compact device ensures reliable performance in harsh environments with its dual terminal design and small outline package.

Median Price

$0.292

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,257 parts In-Stock

1+ parts

$0.292

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2,257

$0.292

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Chip1Stop

Japan . 2,358 parts In-Stock

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-

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2,358

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Verical

USA . 2,257 parts In-Stock

1+ parts

-

100+ parts

$0.292

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2,257

-

$0.292

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 400 parts In-Stock

1+ parts

$0.273

100+ parts

-

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400

$0.273

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Vyrian

USA . 10,699 parts In-Stock

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10,699

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Anansix

USA . 498 parts In-Stock

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498

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Distributors (Availability)

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Corphita

USA . 1,384 parts In-Stock

1+ parts

$0.258

100+ parts

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1,384

$0.258

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Component Stockers USA

USA . 3,411 parts In-Stock

1+ parts

$0.330

100+ parts

$0.330

1k+ parts

$0.330

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-

3,411

$0.330

$0.330

$0.330

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Microchip USA

USA . 5,597 parts In-Stock

1+ parts

$1.982

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5,597

$1.982

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IDEA Electronic Components Group

UK . 1,119 parts In-Stock

1+ parts

$2.867

100+ parts

-

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$2.580

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1,119

$2.867

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$2.580

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MKK Technologies

India . 1,546 parts In-Stock

1+ parts

$5.391

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1,546

$5.391

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DigiPath Technology Company

USA . 1,546 parts In-Stock

1+ parts

$5.391

100+ parts

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1,546

$5.391

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-

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AZTECH Wire

Italy . 86 parts In-Stock

1+ parts

$8.590

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86

$8.590

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Parana Technologies

USA . 982 parts In-Stock

1+ parts

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$3.428

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982

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$3.428

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Overview

Unlock unparalleled performance with the M93C46-RDW3TP/K EEPROM from STMicroelectronics—your trusted partner in innovation! This compact, high-reliability memory solution excels across automotive and industrial applications, ensuring robust data retention under extreme conditions. With its AEC-Q100 certification, enjoy peace of mind knowing you're backed by ST's superior quality and expertise. Elevate your designs with efficiency and durability, all while maximizing value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliable performance in various environmental conditions.

Surface Mount: YES

The surface mount design allows for easier integration into compact electronic assemblies.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality, making it suitable for automotive applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, allowing for more efficient layout and design.

Operating Mode: SYNCHRONOUS

Synchronous operation can lead to improved performance and efficiency in data transmission.

Nominal Supply Voltage / Vsup: 2.5 V

Operating at a nominal voltage of 2.5 V allows for low-power consumption, enhancing battery life in portable devices.

No. of Terminals: 8

A compact design with 8 terminals facilitates easy connections while maintaining a small footprint.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The thin profile and small outline make this EEPROM suitable for space-constrained applications.

Alternate Memory Width: 8

An 8-bit alternate memory width provides flexibility for various data processing applications.

Maximum Operating Temperature: 125 °C

Rated for operation up to 125 °C, making it ideal for high-temperature environments like automotive applications.

Organization: 64X16

With a 64x16 organization, this EEPROM offers efficient data storage and retrieval capabilities.

Minimum Operating Temperature: -40 °C

Designed to operate in extreme cold, ensuring reliability in harsh environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality finish enhances longevity and reduces the risk of oxidation for reliable connections.

Terminal Position: DUAL

Dual terminal positions enable versatile layout options for PCB design.

Maximum Seated Height: 1.2 mm

Low profile with a maximum seated height of 1.2 mm ensures compatibility with compact designs.

Maximum Clock Frequency (fCLK): 2 MHz

A high clock frequency allows for fast data processing and retrieval, improving overall performance.

Width: 3 mm

Compact width of 3 mm allows for efficient use of board space without compromising functionality.

Minimum Supply Voltage (Vsup): 1.8 V

Allows operation at lower voltages, which is advantageous for low-power electronic designs.

Maximum Time At Peak Reflow Temperature: 30 s

Designed to tolerate peak reflow temperatures, aiding in stable soldering processes.

Peak Reflow Temperature: 260 °C

A high peak reflow temperature rating ensures compatibility with modern manufacturing processes.

Length: 4.4 mm

Compact length of 4.4 mm makes it suitable for space-sensitive applications.

Temperature Grade: AUTOMOTIVE

Designed for automotive use, this grade guarantees durability and performance in vehicle applications.

Technology: CMOS

CMOS technology allows for low power consumption while offering high-speed operation.

Parallel or Serial: SERIAL

The serial interface simplifies communication and minimizes pin count, saving PCB space.

Terminal Form: GULL WING

Gull wing terminals provide stable connections and are easy to solder, enhancing manufacturing efficiency.

No. of Words: 64 words

Offers a usable memory storage of 64 words, sufficient for various applications where moderate data storage is needed.

Memory Width: 16

A memory width of 16 bits increases data capacity and processing efficiency, advantageous for data-intensive applications.

Terminal Pitch: 0.65 mm

Small terminal pitch allows for a denser component layout, maximizing the use of space on the PCB.

No. of Words Code: 64

Consistent number of words simplifies programming and data management for developers.

Maximum Supply Voltage (Vsup): 5.5 V

Support for higher voltage allows flexibility in various application environments and power specifications.

Serial Bus Type: MICROWIRE

Microwire bus type provides a simple yet effective communication protocol for integration with MCUs.

Maximum Write Cycle Time (tWC): 4 ms

Fast write cycle time enhances efficiency for applications requiring frequent updates to stored data.

Memory Density: 1024 bit

A memory density of 1024 bits is suitable for moderate data storage needs in various electronic applications.

Memory IC Type: EEPROM

As an EEPROM type, it offers non-volatile storage, retaining data even when power is lost.

Technical Specifications

EEPROM M93C46-RDW3TP/K attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

2 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

MICROWIRE

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Maximum Write Cycle Time (tWC):

4 ms

Trade Compliance

M93C46-RDW3TP/K Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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