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M93C06-BN6P

STMicroelectronics

M93C06-BN6P by STMicroelectronics

M93C06-BN6P by STMicroelectronics is a 256-bit EEPROM with a 5V supply, featuring a max clock frequency of 2 MHz and endurance of 1M write/erase cycles. It operates in synchronous mode, making it ideal for industrial applications requiring reliable data storage. Its compact design ensures efficient integration into various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,557 parts In-Stock

1+ parts

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4,557

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Digiode

USA . 2,882 parts In-Stock

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2,882

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Anansix

USA . 1,009 parts In-Stock

1+ parts

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1,009

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 499 parts In-Stock

1+ parts

$2.269

100+ parts

-

1k+ parts

$2.042

10k+ parts

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499

$2.269

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$2.042

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MKK Technologies

India . 1,853 parts In-Stock

1+ parts

$4.266

100+ parts

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1,853

$4.266

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DigiPath Technology Company

USA . 1,853 parts In-Stock

1+ parts

$4.266

100+ parts

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1,853

$4.266

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Corphita

USA . 1,331 parts In-Stock

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1,331

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Parana Technologies

USA . 571 parts In-Stock

1+ parts

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100+ parts

$2.713

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571

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$2.713

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Overview

Unlock the potential of your designs with the M93C06-BN6P EEPROM from STMicroelectronics—where quality meets innovation. Renowned for its reliability and performance, this versatile memory solution enhances a wide range of applications, from automotive to industrial control systems. With robust write protection and impressive endurance, it ensures data integrity and longevity. Choose the M93C06-BN6P for superior value that empowers your projects with efficiency and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making this EEPROM suitable for various applications.

Package Shape: RECTANGULAR

Rectangular packaging allows for efficient use of space on circuit boards, enabling compact designs in electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation provides faster data access and improved timing accuracy, enhancing performance in high-speed applications.

Nominal Supply Voltage / Vsup: 5V

A nominal supply voltage of 5V is standard in many electronic systems, ensuring compatibility with a wide range of devices.

Power Supplies (V): 5V

Consistent power supply requirements simplify integration into existing systems without extensive modifications.

No. of Terminals: 8

Having 8 terminals is efficient for compact designs while providing sufficient connections for functionality.

Package Style (Meter): IN-LINE

An in-line package style facilitates easier PCB assembly and connections, improving assembly efficiency.

Alternate Memory Width: 8

Supporting an 8-bit memory width allows for compatibility with various microcontrollers and processing units.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this EEPROM is suitable for industrial applications where temperature variations may occur.

Organization: 16X16

The 16x16 organization provides a balanced architecture for efficient data storage and retrieval in embedded systems.

Minimum Operating Temperature: -40 °C

Operating in temperatures as low as -40 °C demonstrates reliability in extreme environments, ideal for automotive and industrial applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and enhances long-term reliability of connections.

Terminal Position: DUAL

Dual terminal position allows for flexible lay-out on PCB, accommodating various design configurations.

Write Protection: SOFTWARE

Software-based write protection adds an extra layer of security, preventing unintended data modifications.

Maximum Seated Height: 5.33 mm

A compact seated height helps in designs where space is limited, allowing for denser circuit layouts.

Maximum Clock Frequency (fCLK): 2 MHz

The 2 MHz clock frequency supports fast data transfer rates, enhancing overall system performance.

Width: 7.62 mm

The width of 7.62 mm provides a standard size that is compatible with many PCB layouts.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5V allows operation in a wider range of power supply conditions.

Length: 9.27 mm

The compact length fits well in space-constrained environments without compromising functionality.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature ranges increases reliability in demanding applications, ensuring long-term performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed, which are excellent traits for memory devices.

Parallel or Serial: SERIAL

Serial communication simplifies connections and reduces pin count, easing the integration process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure installation, making them suitable for a variety of applications, including prototyping.

Maximum Supply Current: 1.5 mA

Low maximum supply current contributes to energy efficiency, essential for battery-powered devices.

No. of Words: 16 words

With 16 words of storage, this EEPROM is sufficient for simple data storage tasks in embedded systems.

Memory Width: 16

16-bit memory width allows for efficient processing of data, making it suitable for various digital applications.

Minimum Data Retention Time: 40 years

A minimum data retention time of 40 years ensures that critical data is preserved long term, even without power.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch is a standard measurement that simplifies component placement and soldering.

No. of Words Code: 16

Having 16 words simplifies software architecture and coding, making product development more efficient.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5V provides flexibility in power supply design without risking damage.

Endurance: 1,000,000 Write/Erase Cycles

With 1 million write/erase cycles, this EEPROM offers high endurance, making it a reliable choice for applications requiring frequent data updates.

Serial Bus Type: MICROWIRE

Utilizing the MICROWIRE serial bus type allows for efficient communication and integration with various controllers.

Maximum Write Cycle Time (tWC): 10 ms

A maximum write cycle time of 10 ms allows for timely updates in applications with dynamic data needs.

Memory Density: 256 bit

With a memory density of 256 bits, this EEPROM offers suitable space for small data storage tasks in embedded systems.

Memory IC Type: EEPROM

As an EEPROM type memory IC, it combines high reliability with reusability, ideal for applications that require non-volatile storage.

Maximum Standby Current: 0.00005 Amp

A very low maximum standby current enhances energy efficiency, making it perfect for battery-operated devices.

Technical Specifications

EEPROM M93C06-BN6P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

MICROWIRE

Maximum Standby Current:

.00005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

M93C06-BN6P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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