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24LC08BHT-E/OT

Microchip Technology

24LC08BHT-E/OT by Microchip Technology

24LC08BHT-E/OT by Microchip Technology is a 1Kx8 EEPROM with 8192-bit memory density. Operating at 5V, it offers 1000000 write/erase cycles and supports I2C serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 33,026 parts In-Stock

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Vyrian

USA . 5,839 parts In-Stock

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5,839

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Corohmni

South Africa . 75 parts In-Stock

1+ parts

$3.018

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75

$3.018

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Aztec Data Supply Inc.

USA . 4,501 parts In-Stock

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$4.010

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$4.010

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Ampacity Inc.

Singapore . 1,504 parts In-Stock

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$10.000

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1,504

$10.000

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AZTECH Wire

Italy . 390 parts In-Stock

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$12.685

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390

$12.685

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Semicontronic

India . 364 parts In-Stock

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$24.000

100+ parts

$23.400

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$23.280

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364

$24.000

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$23.280

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West Coast Incorporated

USA . 5,296 parts In-Stock

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Argo Parts USA

USA . 610 parts In-Stock

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610

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Continental Prestige Electronics

USA . 299 parts In-Stock

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299

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Unlock a world of endless possibilities with the 24LC08BHT-E/OT EEPROM by Microchip Technology. Designed with top-quality materials and cutting-edge technology, this small yet powerful device offers reliable data storage in automotive applications. With a high endurance of 1,000,000 write/erase cycles, low standby current, and secure hardware write protection, this EEPROM ensures your valuable information is safe and accessible whenever you need it. Trust Microchip Technology to deliver superior performance and unmatched durability in every product they create. Elevate your projects with the 24LC08BHT-E/OT and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material makes the EEPROM durable and resistant to external factors.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and efficient data transfer within the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems.

No. of Terminals: 5

Having 5 terminals provides a simple and efficient interface for connections to external devices.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance even in harsh environments.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for easy interfacing with other components and devices.

Memory Width: 8

The 8-bit memory width allows for efficient storage and retrieval of data.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating ensures long-lasting performance and reliability.

Technical Specifications

EEPROM 24LC08BHT-E/OT attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XMMR

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

5

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.45 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

1.55 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC08BHT-E/OT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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