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24AA256T-I/MF

Microchip Technology

24AA256T-I/MF by Microchip Technology

24AA256T-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 2.5V and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz, 1000000 write/erase cycles endurance, and -40 to 85 °C temperature range. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,983 parts In-Stock

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VNN

France . 847 parts In-Stock

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Nova Conductors

Japan . 97 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 154 parts In-Stock

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$5.573

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154

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AZTECH Wire

Italy . 561 parts In-Stock

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$21.930

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561

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Marpe Global Electronics

Taiwan . 4,734 parts In-Stock

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QualityLine Systems

Poland . 4,734 parts In-Stock

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XL Components Corporation

Australia . 4,734 parts In-Stock

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Continental Prestige Electronics

USA . 2,446 parts In-Stock

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Argo Parts USA

USA . 1,647 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 24AA256T-I/MF by Microchip Technology. Built with precision and expertise, this EEPROM device offers unmatched quality and performance in a compact package. Ideal for a wide range of applications, this product ensures your data is safe and secure. Trust Microchip Technology to deliver cutting-edge solutions that provide value, benefits, and advantages to meet all your storage needs. Elevate your projects with the 24AA256T-I/MF and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM chip, ensuring longevity and reliability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Screening Level: AEC-Q100

Meets automotive electronic component standards, making it suitable for use in automotive applications where high reliability is essential.

Operating Mode: SYNCHRONOUS

Enhances data transfer speed and efficiency, improving overall performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 2.5

Works efficiently at a moderate voltage level, ensuring stable operation while reducing power consumption.

No. of Terminals: 8

Offers sufficient connectivity options for interfacing with other devices, enabling versatile integration in various systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for use in harsh environments without compromising functionality.

Endurance: 1000000 Write/Erase Cycles

Provides a high number of write/erase cycles, ensuring longevity and reliability for frequent data storage operations.

Technical Specifications

EEPROM 24AA256T-I/MF attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

6 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA256T-I/MF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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