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24LC128T-I/SNG

Microchip Technology

24LC128T-I/SNG by Microchip Technology

24LC128T-I/SNG by Microchip Technology is an EEPROM with 16KX8 organization, operating at 4.5V, and featuring I2C control byte 1010DDDR. It has a memory density of 131072 bit and endurance of 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Rebound Electronics

UK . 2,751 parts In-Stock

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VNN

France . 1,343 parts In-Stock

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Vyrian

USA . 1,137 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Aztec Data Supply Inc.

USA . 885 parts In-Stock

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$2.140

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$5.113

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$4.857

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$4.857

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$5.113

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$4.857

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Corohmni

South Africa . 10 parts In-Stock

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$5.618

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AZTECH Wire

Italy . 325 parts In-Stock

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$10.978

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Ampacity Inc.

Singapore . 645 parts In-Stock

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$20.000

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Semicontronic

India . 483 parts In-Stock

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$23.000

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$22.425

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$22.310

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Perfect Parts

USA . 13,638 parts In-Stock

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Lixinc

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GreenTree Electronics

Israel . 12,177 parts In-Stock

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Ledger Components

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LMD Electronica

Estonia . 4,292 parts In-Stock

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Argo Parts USA

USA . 3,518 parts In-Stock

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Montano Global Distributors

Canada . 3,319 parts In-Stock

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NIA Electronics

USA . 2,196 parts In-Stock

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LOOK Integrated Logistics

Peru . 811 parts In-Stock

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Bastille Electronics

Australia . 750 parts In-Stock

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Continental Prestige Electronics

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Overview

Unlock the power of reliable data storage with the 24LC128T-I/SNG EEPROM by Microchip Technology. As a leader in semiconductor technology, Microchip guarantees top-notch quality and performance. This compact memory device is perfect for industrial applications, offering a wide range of benefits such as high endurance, low power consumption, and secure write protection. Ensure your data is safe and easily accessible with the versatile 24LC128T-I/SNG - the smart choice for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for electronic components.

Surface Mount: YES

Easy to mount on circuit boards for efficient integration.

Nominal Supply Voltage / Vsup (V): 4.5

Optimal voltage for reliable performance.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications with high temperature requirements.

Organization: 16KX8

Organized memory layout for efficient data storage and retrieval.

No. of Words: 16384 words

Large capacity for storing data.

Endurance: 1000000 Write/Erase Cycles

Long-lasting reliability with high write/erase cycle endurance.

Serial Bus Type: I2C

Supports I2C communication for easy interfacing with other devices.

Technical Specifications

EEPROM 24LC128T-I/SNG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC128T-I/SNG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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