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11AA010T-I/SN

Microchip Technology

11AA010T-I/SN by Microchip Technology

11AA010T-I/SN by Microchip Technology is a 1024-bit EEPROM with 128x8 organization. It operates at 1 MHz clock frequency, has 1000000 write/erase cycles endurance, and uses a serial bus type of 1-WIRE. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package style.

Median Price

$0.315

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 79 parts In-Stock

1+ parts

$0.315

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79

$0.315

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Vyrian

USA . 6,685 parts In-Stock

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6,685

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VNN

France . 45 parts In-Stock

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45

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,903 parts In-Stock

1+ parts

$0.315

100+ parts

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$0.309

3,903

$0.315

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$0.309

Argo Parts USA

USA . 2,048 parts In-Stock

1+ parts

$0.315

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$0.306

2,048

$0.315

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$0.306

Netroflash

USA . 50 parts In-Stock

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$0.315

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$0.309

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50

$0.315

$0.309

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Microchip USA

USA . 2,178 parts In-Stock

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$1.625

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2,178

$1.625

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Ampacity Inc.

Singapore . 1,103 parts In-Stock

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$4.000

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1,103

$4.000

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AZTECH Wire

Italy . 451 parts In-Stock

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$16.805

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451

$16.805

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Ledger Components

France . 7,588 parts In-Stock

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LOOK Integrated Logistics

Peru . 7,234 parts In-Stock

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Montano Global Distributors

Canada . 3,701 parts In-Stock

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LMD Electronica

Estonia . 3,193 parts In-Stock

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NIA Electronics

USA . 1,850 parts In-Stock

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1,850

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Overview

Unlock the power of reliable data storage with the 11AA010T-I/SN EEPROM by Microchip Technology. Designed with precision and quality in mind, this versatile memory device offers unparalleled value for a wide range of applications. Whether you're working on industrial automation, automotive electronics, or consumer devices, this EEPROM's robust performance and high endurance of 1,000,000 write/erase cycles ensure your data is safe and secure. Trust in Microchip Technology to deliver top-notch solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring a longer lifespan.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement that can be easily supplied by most systems.

Operating Mode: SYNCHRONOUS

Efficient data transfer and communication between the EEPROM and the system.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Memory Density: 1024 bit

Provides ample storage capacity for data.

Technical Specifications

EEPROM 11AA010T-I/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Qualification:

Not Qualified

Ready or Busy:

NO

Reverse Pinout:

NO

Screening Level:

TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

1-WIRE

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

11AA010T-I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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