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11AA010-I/P

Microchip Technology

11AA010-I/P by Microchip Technology

11AA010-I/P by Microchip Technology is an EEPROM with 128x8 organization, operating at 1 MHz clock frequency. It has a max write cycle time of 10 ms and can endure up to 1,000,000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

Median Price

$0.375

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 420 parts In-Stock

1+ parts

$0.360

100+ parts

$0.300

1k+ parts

$0.290

10k+ parts

$0.270

420

$0.360

$0.300

$0.290

$0.270

Mouser Electronics

USA . 274 parts In-Stock

1+ parts

$0.390

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-

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274

$0.390

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NAC Semi

USA . 360 parts In-Stock

1+ parts

$0.380

100+ parts

$0.350

1k+ parts

$0.310

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-

360

$0.380

$0.350

$0.310

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Vyrian

USA . 4,826 parts In-Stock

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4,826

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VNN

France . 3,671 parts In-Stock

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Cyclops Electronics Ltd

UK . 150 parts In-Stock

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Nova Conductors

Japan . 41 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 592 parts In-Stock

1+ parts

$0.306

100+ parts

$0.298

1k+ parts

$0.297

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592

$0.306

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$0.297

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Ampacity Inc.

Singapore . 438 parts In-Stock

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$0.306

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438

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Microchip USA

USA . 1,288 parts In-Stock

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$2.340

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Corohmni

South Africa . 1,093 parts In-Stock

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$4.573

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Aztec Data Supply Inc.

USA . 3,392 parts In-Stock

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$5.534

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AZTECH Wire

Italy . 808 parts In-Stock

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$16.004

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808

$16.004

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Continental Prestige Electronics

USA . 6,163 parts In-Stock

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Argo Parts USA

USA . 4,759 parts In-Stock

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Perfect Parts

USA . 3,332 parts In-Stock

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Fulton Briggs Corp.

USA . 2,783 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 11AA010-I/P EEPROM by Microchip Technology. Built with industry-leading quality and precision, this product is designed to meet the demands of various applications with ease. From automotive to industrial use, this EEPROM offers unparalleled value, benefits, and advantages to customers seeking a robust and efficient memory solution. Trust in Microchip Technology to deliver excellence, innovation, and superior performance for all your electronic needs. Choose the 11AA010-I/P for seamless integration and dependable functionality that sets new standards in data storage technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the EEPROM, making it a reliable choice for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a supply voltage of 5V provides stable and consistent power to the EEPROM, ensuring proper functionality.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this EEPROM can withstand harsh environmental conditions.

Memory Density: 1024 bit

This EEPROM offers a high memory density of 1024 bits, allowing for storage of a large amount of data in a compact form factor.

Endurance: 1000000 Write/Erase Cycles

The EEPROM's high endurance rating of 1,000,000 write/erase cycles ensures long-term reliability and data retention.

Technical Specifications

EEPROM 11AA010-I/P attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.271 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Ready or Busy:

NO

Reverse Pinout:

NO

Screening Level:

TS 16949

Maximum Seated Height:

5.334 mm

Serial Bus Type:

1-WIRE

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

11AA010-I/P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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