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11AA020-I/S16K

Microchip Technology

11AA020-I/S16K by Microchip Technology

11AA020-I/S16K by Microchip Technology is a 256x8 EEPROM with 2048-bit memory density. It operates at 0.1 MHz clock frequency, has 1000000 write/erase cycles endurance, and uses a serial bus type of 1-WIRE. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 93 parts In-Stock

1+ parts

$0.240

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93

$0.240

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Vyrian

USA . 3,968 parts In-Stock

1+ parts

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3,968

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VNN

France . 619 parts In-Stock

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619

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,916 parts In-Stock

1+ parts

$0.240

100+ parts

-

1k+ parts

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$0.233

3,916

$0.240

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$0.233

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.240

100+ parts

$0.235

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1,000

$0.240

$0.235

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Continental Prestige Electronics

USA . 365 parts In-Stock

1+ parts

$0.240

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$0.235

365

$0.240

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$0.235

AZTECH Wire

Italy . 812 parts In-Stock

1+ parts

$7.046

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812

$7.046

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Ampacity Inc.

Singapore . 1,135 parts In-Stock

1+ parts

$20.000

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1,135

$20.000

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Microchip USA

USA . 1,089 parts In-Stock

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1,089

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Marpe Global Electronics

Taiwan . 207 parts In-Stock

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QualityLine Systems

Poland . 207 parts In-Stock

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207

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XL Components Corporation

Australia . 207 parts In-Stock

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207

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Overview

Unlock the power of reliable data storage with the 11AA020-I/S16K by Microchip Technology. This high-quality EEPROM offers unparalleled value and benefits, providing customers with a durable solution for their memory needs. With a maximum endurance of 1,000,000 write/erase cycles and a wide operating temperature range, this product is ideal for industrial applications where reliability is key. Trust in Microchip Technology's reputation for excellence and choose the 11AA020-I/S16K for all your memory requirements.

Feature Benefit Bullets

Surface Mount YES:

Allows for easy integration onto circuit boards, saving space and simplifying design.

Screening Level TS 16949:

Ensures high quality and reliability, making it suitable for automotive applications.

Package Shape RECTANGULAR:

Provides a standard form factor for easy handling and installation in various devices.

Operating Mode SYNCHRONOUS:

Enables synchronized data transfers, improving overall system efficiency.

Nominal Supply Voltage / Vsup (V) 5:

Compatible with common voltage levels, making it versatile for different applications.

Package Style (Meter) UNCASED CHIP:

Offers a compact and lightweight design for portable electronics.

Maximum Operating Temperature 85 °C:

Can withstand high temperatures, ideal for industrial environments.

Organization 256X8:

Provides a good balance between storage capacity and data transfer speeds.

Output Characteristics TOTEM POLE:

Allows for strong and reliable signal outputs.

Minimum Operating Temperature -40 °C:

Capable of functioning in extreme cold temperatures, suitable for harsh environments.

Terminal Position UPPER:

Simplifies installation and wiring, improving overall ease of use.

Write Protection SOFTWARE:

Offers enhanced security features to protect stored data from unauthorized access.

Maximum Clock Frequency (fCLK) 0.1 MHz:

Supports high-speed data transfers, enhancing overall system performance.

Minimum Supply Voltage (Vsup) 2.5 V:

Can operate with low voltage levels, increasing energy efficiency.

Temperature Grade INDUSTRIAL:

Designed to meet the rigorous demands of industrial applications.

Technology CMOS:

Employs advanced CMOS technology for low power consumption and high reliability.

Parallel or Serial SERIAL:

Supports serial communication for easy integration with microcontrollers and other devices.

Terminal Form NO LEAD:

Lead-free terminal form for environmentally friendly manufacturing.

Maximum Supply Current 2 mA:

Low power consumption for energy-efficient operation.

No. of Words 256 words:

Provides ample storage capacity for storing data or program codes.

Memory Width 8:

Data width of 8 bits for efficient data handling and processing.

Minimum Data Retention Time 200:

Ensures data integrity for long periods of time without power.

No. of Words Code 256:

Offers a standardized coding scheme for easy data organization.

Maximum Supply Voltage (Vsup) 5.5 V:

Can safely operate with higher supply voltages for flexibility.

Endurance 1000000 Write/Erase Cycles:

High endurance for frequent read/write operations, increasing product lifespan.

Serial Bus Type 1-WIRE:

Supports a single-wire communication interface for simplified connectivity.

Maximum Write Cycle Time (tWC) 10 ms:

Fast write cycle time for quick data updates and programming.

Memory Density 2048 bit:

Offers high memory density for storing a large amount of data in a compact space.

Memory IC Type EEPROM:

Utilizes EEPROM technology for non-volatile data storage and retrieval.

Maximum Standby Current 0.000005 Amp:

Ultra-low standby current for minimal power consumption when idle.

Technical Specifications

EEPROM 11AA020-I/S16K attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-XUUC-N

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

TOTEM POLE

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Equivalence Code:

DIE OR CHIP

Package Shape:

Package Style (Meter):

UNCASED CHIP

Parallel or Serial:

SERIAL

Ready or Busy:

NO

Reverse Pinout:

NO

Screening Level:

TS 16949

Serial Bus Type:

1-WIRE

Maximum Standby Current:

.000005 Amp

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Toggle Bit:

NO

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

SOFTWARE

Trade Compliance

11AA020-I/S16K Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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