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24AA128-I/MF

Microchip Technology

24AA128-I/MF by Microchip Technology

24AA128-I/MF by Microchip Technology is an EEPROM with 16KX8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and can endure 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 590 parts In-Stock

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$1.060

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Mouser Electronics

USA . 282 parts In-Stock

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$1.100

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$1.070

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$1.060

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282

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$1.060

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Distributors (In-Stock)

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.990

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1,000

$0.990

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Vyrian

USA . 7,884 parts In-Stock

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VNN

France . 3,249 parts In-Stock

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EMSNET

USA . 235 parts In-Stock

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Euro-Tech

UK . 37 parts In-Stock

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Semicontronic

India . 22 parts In-Stock

1+ parts

$0.880

100+ parts

$0.858

1k+ parts

$0.854

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22

$0.880

$0.858

$0.854

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Ampacity Inc.

Singapore . 4 parts In-Stock

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$0.880

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4

$0.880

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Continental Prestige Electronics

USA . 4,508 parts In-Stock

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$0.990

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$0.970

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Argo Parts USA

USA . 3,635 parts In-Stock

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$0.990

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Netroflash

USA . 100 parts In-Stock

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$0.990

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$0.940

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$0.920

100

$0.990

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$0.920

Corohmni

South Africa . 168 parts In-Stock

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$3.473

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Aztec Data Supply Inc.

USA . 4,675 parts In-Stock

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$4.320

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$4.320

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Fulton Briggs Corp.

USA . 3,935 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Perfect Parts

USA . 538 parts In-Stock

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Lixinc

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Overview

Experience the top-notch quality and reliability of Microchip Technology with the 24AA128-I/MF EEPROM. This versatile memory IC offers endless possibilities for applications in automotive, industrial, and consumer electronics. With a robust design and high endurance of 1,000,000 write/erase cycles, this EEPROM ensures your data is safe and secure. Trust Microchip Technology to deliver cutting-edge technology that exceeds your expectations. Upgrade your projects with the 24AA128-I/MF and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the body of the package provides durability and protection to the EEPROM, making it suitable for various environments.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation, saving space on the PCB and facilitating automated assembly processes.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures that the EEPROM meets the stringent automotive industry requirements, making it reliable and suitable for automotive applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and synchronized data transfer, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 2.5

The 2.5V nominal supply voltage is common and widely available, making it compatible with a variety of systems and easy to integrate.

Power Supplies (V): 2/5

The dual power supply options of 2V and 5V allow for flexibility in system design and compatibility with different voltage requirements.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options and ensures proper communication with the system, improving reliability.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows the EEPROM to function reliably in a wide range of temperature conditions.

Organization: 16KX8

The 16KX8 organization indicates that the EEPROM has a capacity of 16 kilobits with a word width of 8 bits, suitable for storing and retrieving data efficiently.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics provide flexibility in interfacing with other devices and support reliable communication in multi-device setups.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the EEPROM can function in extreme cold temperatures, making it suitable for a variety of environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and conductivity, ensuring a reliable connection on the PCB for consistent performance.

I2C Control Byte: 1010DDDR

The I2C control byte format of 1010DDDR is a standard communication protocol, allowing for easy integration and communication with other I2C devices.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and connection options, making it easier to integrate the EEPROM in various system designs.

Write Protection: HARDWARE

Having hardware write protection ensures data security and integrity, preventing accidental data loss or corruption.

Maximum Seated Height: 1 mm

The low maximum seated height of 1mm saves space on the PCB and allows for compact designs, ideal for applications with size constraints.

Maximum Clock Frequency (fCLK): 0.4 MHz

The maximum clock frequency of 0.4 MHz allows for fast data transfer and efficient operation, improving overall system performance.

Width: 5 mm

The compact width of 5mm allows for space-efficient placement on the PCB and facilitates compact system designs.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage of 1.7V ensures compatibility with lower voltage systems and energy-efficient operation.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and reliability during the assembly process.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for reliable soldering and ensures the EEPROM can withstand high-temperature exposure during assembly.

Length: 6 mm

The compact length of 6mm saves space on the PCB and allows for flexible placement in various system designs.

Programming Voltage (V): 2.5

The programming voltage of 2.5V is standard and widely available, making it easy to program the EEPROM while ensuring compatibility with different systems.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the EEPROM can operate reliably in harsh industrial environments with wide temperature fluctuations.

Technology: CMOS

The CMOS technology used in the EEPROM offers low power consumption, fast operation, and reliable performance, making it suitable for a variety of applications.

Parallel or Serial: SERIAL

The serial interface allows for easy integration with microcontrollers and other serial devices, providing efficient data transfer and communication.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the soldering process and improves reliability, ensuring proper connection and performance.

Maximum Supply Current: 3 mA

The low maximum supply current of 3mA helps in energy-efficient operation, reducing power consumption and heat dissipation.

No. of Words: 16384 words

With a capacity of 16384 words, the EEPROM can store a large amount of data, making it suitable for applications requiring significant memory storage.

Memory Width: 8

The memory width of 8 bits allows for efficient data storage and retrieval, supporting various data formats and operations.

Minimum Data Retention Time: 200

The minimum data retention time of 200 years ensures that data stored in the EEPROM remains intact for a long duration, providing reliable long-term storage.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm allows for easy PCB layout and soldering, ensuring proper connection and reliable performance.

No. of Words Code: 16K

Indicating 16K in the code specifies the capacity of the EEPROM, making it easy to identify and integrate into the system design.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage of 5.5V provides flexibility in system design and compatibility with high-voltage requirements.

Endurance: 1000000 Write/Erase Cycles

The high endurance of 1,000,000 write/erase cycles ensures long-lasting performance and reliability for frequent data read/write operations.

Serial Bus Type: I2C

The I2C serial bus type allows for easy communication with other I2C devices, providing a standardized interface for efficient data transfer.

Maximum Write Cycle Time (tWC): 5 ms

The maximum write cycle time of 5ms ensures fast data writing operations, reducing latency and improving system responsiveness.

Memory Density: 131072 bit

With a memory density of 131,072 bits, the EEPROM offers sufficient storage capacity for various data storage requirements.

Memory IC Type: EEPROM

Being an EEPROM type memory IC, it offers non-volatile data storage, allowing data to be retained even when power is removed, making it suitable for critical data storage applications.

Maximum Standby Current: 0.000005 Amp

The low maximum standby current of 0.000005 Amp helps in energy efficiency and reduces power consumption during idle or standby modes.

Technical Specifications

EEPROM 24AA128-I/MF attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

6 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA128-I/MF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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