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24FC256-I/MF

Microchip Technology

24FC256-I/MF by Microchip Technology

24FC256-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, 262144 bit memory density, and 1000000 write/erase cycles. It operates in synchronous mode at a max clock frequency of 1 MHz via I2C serial bus. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

$1.318

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.318

100+ parts

-

1k+ parts

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100

$1.318

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VNN

France . 28,188 parts In-Stock

1+ parts

-

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28,188

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Vyrian

USA . 1,918 parts In-Stock

1+ parts

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1,918

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,593 parts In-Stock

1+ parts

$1.318

100+ parts

-

1k+ parts

-

10k+ parts

$1.292

5,593

$1.318

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-

$1.292

Argo Parts USA

USA . 4,698 parts In-Stock

1+ parts

$1.318

100+ parts

-

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4,698

$1.318

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AZTECH Wire

Italy . 575 parts In-Stock

1+ parts

$6.188

100+ parts

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575

$6.188

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Ampacity Inc.

Singapore . 1,403 parts In-Stock

1+ parts

$17.000

100+ parts

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1,403

$17.000

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QUARKTWIN TECHNOLOGY LTD

USA . 22,861 parts In-Stock

1+ parts

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100+ parts

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22,861

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RGB Technical Solutions

Ukraine . 3,203 parts In-Stock

1+ parts

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3,203

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$1.292

1k+ parts

$1.252

10k+ parts

$1.226

1,000

-

$1.292

$1.252

$1.226

Overview

Unlock a world of endless possibilities with the 24FC256-I/MF EEPROM by Microchip Technology. Known for their top-notch quality and cutting-edge technology, Microchip offers a reliable solution for storing and retrieving data in a wide range of applications. This versatile EEPROM provides exceptional value with its high endurance, low power consumption, and industrial-grade temperature range. Whether you're working on automotive electronics, consumer devices, or industrial equipment, this EEPROM is sure to meet your storage needs with ease. Upgrade to Microchip's 24FC256-I/MF and experience the benefits of superior performance and reliability in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring a longer lifespan and reliable performance.

Operating Mode: SYNCHRONOUS

Allows for efficient data transfer and communication within the EEPROM.

Nominal Supply Voltage / Vsup (V): 2.5

Compatible with a wide range of devices and systems that operate at this voltage, increasing versatility.

No. of Terminals: 8

Offers easy integration and connection with other components in a system.

Minimum Operating Temperature: -40 °C

Suitable for operation in harsh and low-temperature environments, increasing the EEPROM's applicability.

Memory Density: 262144 bit

Provides ample storage capacity for data and information, making it suitable for various applications.

Endurance: 1000000 Write/Erase Cycles

Ensures long-lasting performance and reliability for frequent read/write operations.

Technical Specifications

EEPROM 24FC256-I/MF attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

6 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Programming Voltage (V):

2.5

Qualification:

Not Qualified

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24FC256-I/MF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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