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24FC256-I/SNG

Microchip Technology

24FC256-I/SNG by Microchip Technology

24FC256-I/SNG by Microchip Technology is a 32Kx8 EEPROM with I2C control byte for hardware write protection. Operating at 1MHz, it offers 1000000 write/erase cycles and has a memory density of 262144 bits. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

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VNN

France . 605 parts In-Stock

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Vyrian

USA . 318 parts In-Stock

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318

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Nova Conductors

Japan . 40 parts In-Stock

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Semicontronic

India . 1,484 parts In-Stock

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$2.000

100+ parts

$1.950

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$1.940

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1,484

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$1.940

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Corohmni

South Africa . 62 parts In-Stock

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$2.381

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Aztec Data Supply Inc.

USA . 3,881 parts In-Stock

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$2.950

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3,881

$2.950

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AZTECH Wire

Italy . 820 parts In-Stock

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$14.173

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820

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Ampacity Inc.

Singapore . 340 parts In-Stock

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$28.000

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340

$28.000

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Fulton Briggs Corp.

USA . 6,462 parts In-Stock

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Continental Prestige Electronics

USA . 2,710 parts In-Stock

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Argo Parts USA

USA . 1,184 parts In-Stock

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Bastille Electronics

Australia . 870 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 24FC256-I/SNG EEPROM by Microchip Technology. As a leading manufacturer in the industry, Microchip guarantees top-notch quality and performance. This versatile memory device is perfect for a wide range of applications, offering customers value, benefits, and advantages that surpass the competition. Trust in the endurance of up to 1,000,000 write/erase cycles and the convenience of a compact design for seamless integration into your projects. Experience the difference with Microchip Technology.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the EEPROM, making it suitable for various environments.

Surface Mount:

YES - The surface mount feature allows for easy and efficient installation on PCBs, saving time and effort.

Package Shape:

RECTANGULAR - The rectangular shape of the package allows for efficient use of space on a PCB, ideal for compact designs.

Operating Mode:

SYNCHRONOUS - The synchronous operation ensures reliable and accurate data transfer, making it a dependable choice for applications requiring precise timing.

Power Supplies (V):

3/5 - The dual power supply options allow for flexibility in powering the EEPROM, accommodating different system requirements.

No. of Terminals:

8 - The 8 terminals provide ample connectivity options, ensuring compatibility with a wide range of systems.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space on the PCB, making it suitable for designs where size is a constraint.

Maximum Operating Temperature:

85 °C - The high maximum operating temperature range allows the EEPROM to function reliably even in demanding industrial environments.

Organization:

32KX8 - The 32KX8 organization provides a good balance between memory capacity and data width, suitable for a variety of applications.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature ensures the EEPROM can operate in cold environments without any issues.

Technical Specifications

EEPROM 24FC256-I/SNG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Reverse Pinout:

NO

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24FC256-I/SNG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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