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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
XC18V02VQ44I by Xilinx

XC18V02VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY;

20 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V04PC44C by Xilinx

XC18V04PC44C

Xilinx

XC18V04PC44C by Xilinx is a 512Kx8 EEPROM with 20 MHz clock frequency, 20000 write/erase cycles, and 3.6V max supply voltage. Ideal for industrial applications requiring NOR type memory with 85°C max operating temp and synchronous operation.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V04PC44I by Xilinx

XC18V04PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Surface Mount: YES;

20 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V04VQ44C by Xilinx

XC18V04VQ44C

Xilinx

XC18V04VQ44C by Xilinx is a 512Kx8 EEPROM with NOR type technology. Operating at 3.3V, it offers 20MHz clock frequency and 20000 write/erase cycles. Ideal for industrial applications requiring reliable configuration memory with a max standby current of 0.01A.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V04VQ44I by Xilinx

XC18V04VQ44I

Xilinx

XC18V04VQ44I by Xilinx is a 512KX8 EEPROM with NOR type technology. It operates at 3.3V, has a clock frequency of 33 MHz, and offers 10000 Write/Erase cycles. Ideal for industrial applications requiring fast access times and high memory density in a compact square package.

20 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V256PC20C by Xilinx

XC18V256PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Length: 8.9662 mm;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

20

32768 words

32K

SYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V256PC20I by Xilinx

XC18V256PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Terminal Finish: Tin/Lead (Sn85Pb15);

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

20

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V256SO20C by Xilinx

XC18V256SO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Type: NOR TYPE;

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

20

32768 words

32K

SYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

XC18V256SO20I by Xilinx

XC18V256SO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Memory Density: 262144 bit;

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

20

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

XC18V256VQ44C by Xilinx

XC18V256VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Peak Reflow Temperature (C): 240;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

44

32768 words

32K

SYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V256VQ44I by Xilinx

XC18V256VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; No. of Words Code: 32K;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

44

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V512PC20C by Xilinx

XC18V512PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Seated Height: 4.572 mm;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V512PC20I by Xilinx

XC18V512PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Memory Density: 524288 bit;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V512SO20C by Xilinx

XC18V512SO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

15 ns

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e0

12.827 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.6416 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5184 mm

XC18V512SO20I by Xilinx

XC18V512SO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: Tin/Lead (Sn85Pb15);

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

XC18V512VQ44C by Xilinx

XC18V512VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

44

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V512VQ44I by Xilinx

XC18V512VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Memory Width: 8;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

44

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

M24128-BWDW6T by STMicroelectronics

M24128-BWDW6T

STMicroelectronics

M24128-BWDW6T by STMicroelectronics is a 16Kx8 EEPROM with a synchronous operating mode and I2C interface. It features a wide supply voltage range (2.5V-5.5V), operates in -40 °C to 85°C, and supports 1M write/erase cycles, ideal for industrial applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3/5

Not Qualified

1.2 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24128-BWMN6 by STMicroelectronics

M24128-BWMN6

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24256-BWMN6T by STMicroelectronics

M24256-BWMN6T

STMicroelectronics

M24256-BWMN6T by STMicroelectronics is a 32Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates at 2.5-5.5V and supports up to 100k write/erase cycles, ensuring reliability in harsh environments. Its compact SOIC package allows easy surface mounting.

.4 MHz

40

100000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M34D64-WMN6T by STMicroelectronics

M34D64-WMN6T

STMicroelectronics

M34D64-WMN6T by STMicroelectronics is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at a max clock frequency of 0.4 MHz and has an endurance of 1000000 Write/Erase Cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

M95020-MN6 by STMicroelectronics

M95020-MN6

STMicroelectronics

M95020-MN6 by STMicroelectronics is an EEPROM with 256x8 organization, operating at 5V. It features a max clock frequency of 10MHz and SPI serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M95040-WMN6 by STMicroelectronics

M95040-WMN6

STMicroelectronics

M95040-WMN6 by STMicroelectronics is a 4096-bit EEPROM with 512x8 organization, operating at 5 MHz clock frequency. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000002 Amp, it offers endurance of 1,000,000 Write/Erase cycles.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

XC17V01PC20C by Xilinx

XC17V01PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Length: 8.9662 mm;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V01SO20C by Xilinx

XC17V01SO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

15 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17V01SO20I by Xilinx

XC17V01SO20I

Xilinx

Xilinx XC17V01SO20I is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 3.3V, has a clock frequency of 15 MHz, and supports synchronous mode. Ideal for industrial applications requiring configuration memory with a small outline package style.

15 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17V01VO8C by Xilinx

XC17V01VO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

15 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

TSOP

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17V01VO8I by Xilinx

XC17V01VO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

15 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

TSOP

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17V02PC20C by Xilinx

XC17V02PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Input/Output Type: COMMON;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V02PC20I by Xilinx

XC17V02PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V02VQ44C by Xilinx

XC17V02VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Output Characteristics: 3-STATE;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V02VQ44I by Xilinx

XC17V02VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 15 MHz;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V04PC20C by Xilinx

XC17V04PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Peak Reflow Temperature (C): 225;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V04PC20I by Xilinx

XC17V04PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; JESD-609 Code: e0;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V04PC44C by Xilinx

XC17V04PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Current: 15 mA;

15 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V04PC44I by Xilinx

XC17V04PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Memory Width: 1;

15 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V04VQ44C by Xilinx

XC17V04VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; No. of Words Code: 4M;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX1

3-STATE

PLASTIC/EPOXY

TQFP

QFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V04VQ44I by Xilinx

XC17V04VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Organization: 4MX1;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

TQFP

QFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V08PC44C by Xilinx

XC17V08PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Position: QUAD;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V08PC44I by Xilinx

XC17V08PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V08VQ44C by Xilinx

XC17V08VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Terminal Pitch: .8 mm;

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V08VQ44I by Xilinx

XC17V08VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Length: 10 mm;

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V16PC44C by Xilinx

XC17V16PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Position: QUAD;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V16PC44I by Xilinx

XC17V16PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Current: 100 mA;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V16VQ44C by Xilinx

XC17V16VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Terminal Pitch: .8 mm;

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V16VQ44I by Xilinx

XC17V16VQ44I

Xilinx

The Xilinx XC17V16VQ44I is a 2MX8 EEPROM with 3.3V supply, operating at up to 20MHz clock frequency. It features a 44-terminal flatpack package suitable for industrial applications, offering 16777216-bit memory density and configurable as parallel or serial memory IC type.

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

24LC16B-E/ST by Microchip Technology

24LC16B-E/ST

Microchip Technology

24LC16B-E/ST by Microchip Tech is a 2Kx8 EEPROM with 1000000 Write/Erase Cycles. Operating at -40 to 125 °C, it has a Serial I2C interface and supports up to 0.4 MHz clock frequency. Ideal for automotive applications due to AEC-Q100 screening level.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.4 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24LC64XT-E/ST by Microchip Technology

24LC64XT-E/ST

Microchip Technology

24LC64XT-E/ST by Microchip Tech is an EEPROM with 8KX8 organization, 65536-bit memory density, and 1000000 write/erase cycles. Operating in automotive grade at -40 to 125 °C, it uses I2C serial bus for applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1.2 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE