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M24256-BWMN6T

STMicroelectronics

M24256-BWMN6T by STMicroelectronics

M24256-BWMN6T by STMicroelectronics is a 32Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates at 2.5-5.5V and supports up to 100k write/erase cycles, ensuring reliability in harsh environments. Its compact SOIC package allows easy surface mounting.

Median Price

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Lifecycle Status

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13

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Chip Stock

USA . 53,300 parts In-Stock

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Vyrian

USA . 3,466 parts In-Stock

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Tectiva GmbH

Germany . 1,415 parts In-Stock

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Anansix

USA . 1,061 parts In-Stock

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ComSIT Distribution GmbH

Germany . 850 parts In-Stock

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850

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ComSIT USA

USA . 850 parts In-Stock

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850

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ACDS - Activité Composants Distribution Service

France . 751 parts In-Stock

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751

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LWI Electronics Inc

India . 244 parts In-Stock

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244

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Digiode

USA . 239 parts In-Stock

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Connector Distribution Corp

USA . 61 parts In-Stock

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Right Parts Inc.

USA . 61 parts In-Stock

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Prism Electronics

USA . 17 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 12 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,504 parts In-Stock

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$3.764

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$3.387

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$3.764

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$3.387

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MKK Technologies

India . 334 parts In-Stock

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$7.077

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334

$7.077

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DigiPath Technology Company

USA . 334 parts In-Stock

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$7.077

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334

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Microchip USA

USA . 457 parts In-Stock

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$15.264

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AZTECH Wire

Italy . 779 parts In-Stock

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$19.800

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779

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Component Stockers USA

USA . 527 parts In-Stock

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$99.990

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Kepictronics

USA . 10,590 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,171 parts In-Stock

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Corphita

USA . 4,535 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,114 parts In-Stock

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Perfect Parts

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Infinite Electronics LLP (Excess)

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Cyclops Electronics Ltd (Excess)

UK . 751 parts In-Stock

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Parana Technologies

USA . 626 parts In-Stock

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$4.500

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Glotronic Ltd.

UK . 601 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Unlock the potential of your designs with STMicroelectronics' M24256-BWMN6T EEPROM—a reliable memory solution that combines exceptional performance with robust industrial-grade quality. This compact, surface-mount device offers an impressive endurance of 100,000 write cycles and a wide temperature range, making it perfect for automotive, IoT, and consumer applications. Trust in STMicroelectronics' legacy of innovation to enhance your projects with unmatched reliability and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the EEPROM lightweight and cost-effective.

Surface Mount: YES

Being a surface mount component allows for easy integration into compact designs.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on printed circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation improves data transfer rates and system performance.

Nominal Supply Voltage / Vsup: 5V

The standardized nominal supply voltage is compatible with a wide range of circuits.

Power Supplies (V): 3/5

Supports multiple supply voltages, making it versatile for different applications.

No. of Terminals: 8

The 8 terminals provide adequate connection options for functionality in various designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications.

Maximum Operating Temperature: 85 °C

The high operating temperature limit makes it suitable for industrial applications.

Organization: 32KX8

The organization allows for efficient data storage and retrieval in manageable blocks.

Minimum Operating Temperature: -40 °C

The expansive temperature range ensures reliability in harsh environments.

Terminal Finish: TIN LEAD

Tin-lead finishing provides good solderability and durability during assembly.

I2C Control Byte: 1010DDDR

Supports a standard I2C protocol for easy integration with many microcontrollers.

Terminal Position: DUAL

Dual terminal positioning enhances mounting flexibility in circuit designs.

Write Protection: HARDWARE

Hardware write protection increases data integrity and security from accidental erasure.

Maximum Seated Height: 1.75 mm

The low height profile is great for applications where space is at a premium.

Maximum Clock Frequency (fCLK): 0.4 MHz

This clock frequency is sufficient for many typical EEPROM applications.

Width: 3.9 mm

The compact width allows for efficient layout on a PCB.

Minimum Supply Voltage (Vsup): 2.5 V

Supports low voltage operation, which is essential for power-sensitive applications.

Length: 4.9 mm

The short length aids in maintaining a compact footprint on board designs.

Temperature Grade: INDUSTRIAL

The industrial temperature grade assures performance in demanding industrial environments.

Technology: CMOS

CMOS technology offers low power consumption and high reliability.

Parallel or Serial: SERIAL

Serial communication simplifies wiring and reduces pin count on microcontroller connections.

Terminal Form: GULL WING

Gull wing terminals are easier to solder, ensuring reliable electrical connections.

Maximum Supply Current: 1 mA

Low supply current improves power efficiency, making it suitable for battery-operated devices.

No. of Words: 32768 words

A large number of words provides significant storage capability for applications.

Memory Width: 8

An 8-bit memory width allows for efficient data handling in many applications.

Minimum Data Retention Time: 40 years

Long data retention time ensures reliability and persistence of stored data over long periods.

Terminal Pitch: 1.27 mm

A standard terminal pitch facilitates easy integration into existing PCB designs.

No. of Words Code: 32K

Provides ample space for data storage needs in various applications.

Maximum Supply Voltage (Vsup): 5.5V

Flexibility in supply voltage provides compatibility with different designs and applications.

Endurance: 100,000 Write/Erase Cycles

High endurance is critical for applications requiring frequent updates to stored data.

Serial Bus Type: I2C

Using the I2C bus type makes it compatible with a variety of devices and simplifies communication.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time enhances performance in applications demanding quick updates.

Memory Density: 262144 bits

High memory density enables more extensive data storage in compact spaces.

Memory IC Type: EEPROM

EEPROM technology allows for non-volatile storage, retaining data even without power.

Maximum Standby Current: 0.000002 A

Ultra-low standby current ensures energy efficiency, crucial for battery-operated devices.

Technical Specifications

EEPROM M24256-BWMN6T attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

100000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

1 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24256-BWMN6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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