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24LC08BT-I/OTRVE

Microchip Technology

24LC08BT-I/OTRVE by Microchip Technology

24LC08BT-I/OTRVE by Microchip Tech is a 1KX8 EEPROM with 8192-bit memory density. Operating at 5V, it supports I2C serial bus and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with 1000000 write/erase cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 5,102 parts In-Stock

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Vyrian

USA . 859 parts In-Stock

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859

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Nova Conductors

Japan . 48 parts In-Stock

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48

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Aztec Data Supply Inc.

USA . 3,115 parts In-Stock

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$2.710

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$2.710

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$5.004

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$4.754

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$4.754

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10

$5.004

$4.754

$4.754

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Corohmni

South Africa . 205 parts In-Stock

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$5.565

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205

$5.565

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AZTECH Wire

Italy . 278 parts In-Stock

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$7.381

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278

$7.381

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Semicontronic

India . 553 parts In-Stock

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$12.000

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$11.700

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$11.640

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553

$12.000

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$11.640

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Ampacity Inc.

Singapore . 250 parts In-Stock

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$16.000

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250

$16.000

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Continental Prestige Electronics

USA . 5,891 parts In-Stock

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RGB Technical Solutions

Ukraine . 5,449 parts In-Stock

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Argo Parts USA

USA . 2,270 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the cutting-edge 24LC08BT-I/OTRVE by Microchip Technology, a top-tier EEPROM built with precision and reliability in mind. This versatile component offers endless possibilities for applications in various industries, ensuring seamless operation and data integrity. With an exceptional endurance of 1,000,000 write/erase cycles and industrial-grade temperature tolerance, this EEPROM guarantees long-lasting performance. Trust in Microchip Technology's expertise and elevate your projects to new heights with the 24LC08BT-I/OTRVE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material for the package body, ensuring long-term functionality and protection of the EEPROM.

Operating Mode: SYNCHRONOUS

Allows for synchronized operations, enhancing efficiency and performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply requirement, making it compatible with many systems and easy to integrate.

Organization: 1KX8

Organized in a 1K x 8 configuration, providing sufficient memory capacity for data storage.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications, can withstand a wide range of temperatures (-40 to 85°C).

Endurance: 1000000 Write/Erase Cycles

High endurance for write/erase cycles, ensuring longevity and reliability of the EEPROM.

Memory IC Type: EEPROM

Specifically designed as an Electrically Erasable Programmable Read-Only Memory, ideal for data storage and retrieval.

Technical Specifications

EEPROM 24LC08BT-I/OTRVE attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XMMR

JESD-30 Code:

R-PDSO-G5

Length:

2.9 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

5

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

5

Screening Level:

TS 16949

Maximum Seated Height:

1.45 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.55 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC08BT-I/OTRVE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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